Transistors with built-in Resistor UNR21XX Series (UN21XX Series) Silicon PNP epitaxial planer transistor Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 5˚ 1.50+0.25 –0.05 ■ Features 2.8+0.2 –0.3 3 2.90+0.20 –0.05 ■ Resistance by Part Number 1.1+0.3 –0.1 1.1+0.2 –0.1 (R2) 10 kΩ 22 kΩ 47 kΩ 47 kΩ 5.1 kΩ 10 kΩ 10 kΩ 22 kΩ 10 kΩ 10 kΩ 4.7 kΩ 47 kΩ 47 kΩ 47 kΩ 2.2 kΩ 22 kΩ 0 to 0.1 • UNR2110 • UNR2111 • UNR2112 • UNR2113 • UNR2114 • UNR2115 • UNR2116 • UNR2117 • UNR2118 • UNR2119 • UNR211D • UNR211E • UNR211F • UNR211H • UNR211L • UNR211M • UNR211N • UNR211T • UNR211V • UNR211Z 10˚ Marking Symbol (R1) (UN2110) 6L 47 kΩ (UN2111) 6A 10 kΩ (UN2112) 6B 22 kΩ (UN2113) 6C 47 kΩ (UN2114) 6D 10 kΩ (UN2115) 6E 10 kΩ (UN2116) 6F 4.7 kΩ (UN2117) 6H 22 kΩ (UN2118) 6I 0.51 kΩ (UN2119) 6K 1 kΩ (UN211D) 6M 47 kΩ (UN211E) 6N 47 kΩ (UN211F) 6O 4.7 kΩ (UN211H) 6P 2.2 kΩ (UN211L) 6Q 4.7 kΩ (UN211M) EI 2.2 kΩ (UN211N) EW 4.7 kΩ (UN211T) EY 22 kΩ (UN211V) FC 2.2 kΩ (UN211Z) FE 4.7 kΩ 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Internal Connection R1 B C R2 E ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector to base voltage Parameter VCBO −50 V Collector to emitter voltage VCEO −50 V Collector current IC −100 mA Total power dissipation PT 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) The part numbers in the parenthesis show conventional part number. Publication date: January 2002 SJH00006BED 1 UNR21XX Series ■ Electrical Characteristics Ta = 25°C Parameter Symbol Collector cutoff current Conditions Min Typ Unit µA ICBO VCB = −50 V, IE = 0 − 0.1 ICEO VCE = −50 V, IB = 0 − 0.5 IEBO VEB = −6 V, IC = 0 − 0.5 Emitter UNR2111 cutoff current UNR2112/2114/211D/ 211E/211M/211N/211T − 0.2 UNR2113 − 0.1 UNR2110/2115/2116/2117 − 0.01 UNR211F/211H −1.0 UNR2119 −1.5 UNR2118/211L/211V −2.0 mA − 0.4 UNR211Z Collector to base voltage VCBO IC = −10 µA, IE = 0 −50 V Collector to emitter voltage VCEO IC = −2 mA, IB = 0 −50 V VCE = −10 V, IC = −5 mA 35 Forward UNR2111 hFE current UNR2112/211E transfer UNR2113/2114/211M 80 ratio UNR2110*/2115*/2116*/2117* 160 UNR2118/211L 20 UNR2119/211D/211F/211H 30 UNR211N/211T 80 60 460 400 UNR211V 6 20 UNR211Z 60 200 Collector to emitter saturation voltage VCE(sat) UNR211V IC = −10 mA, IB = − 0.3 mA − 0.25 IC = −10 mA, IB = −1.5 mA − 0.07 − 0.25 Output voltage high level VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ Output voltage low level VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ UNR2113 VCC = −5 V, VB = −3.5 V, RL = 1 kΩ UNR211D VCC = −5 V, VB = −10 V, RL = 1 kΩ −4.9 V V − 0.2 V VCC = −5 V, VB = −6 V, RL = 1 kΩ UNR211E VCB = −10 V, IE = 1 mA, f = 200 MHz Transition frequency fT Input UNR2118 R1 resis- UNR2119 80 tance UNR211H/211M/211V 2.2 UNR2116/211F/211L/211N UNR211Z 4.7 UNR2111/2114/2115 10 UNR2112/2117/211T 22 UNR2110/2113/211D/211E 47 −30% 0.51 1 Note) *: hFE rank classification (UNR2110/2115/2116/2117) 2 Max Rank Q R S hFE 160 to 260 210 to 340 290 to 460 SJH00006BED MHz +30% kΩ UNR21XX Series ■ Electrical Characteristics (continued) Ta = 25°C Parameter Symbol Conditions Min Max Resis- UNR2111/2112/2113/211L 0.8 1.0 1.2 tance UNR2114 0.17 0.21 0.25 UNR2118/2119 0.08 0.1 0.12 ratio R1/R2 Typ UNR211D 4.7 UNR211E 2.14 UNR211F/211T 0.47 UNR211H 0.17 0.22 UNR211M 0.047 UNR211N 0.1 UNR211V 1.0 UNR211Z 0.21 Unit 0.27 Common characteristics chart PT T a Total power dissipation PT (mW) 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) Characteristics charts of UNR2110 IC VCE VCE(sat) IC −60 − 0.2 mA −40 − 0.1 mA −20 0 −2 −4 −6 −8 −10 −12 Collector to emitter voltage VCE (V) IC / IB = 10 −30 −10 −3 −1 Ta = 75°C −0.3 25°C −0.1 −0.03 0 hFE IC 400 −25°C −0.01 −0.1 −0.3 −1 −3 −10 −30 Collector current IC (mA) SJH00006BED VCE = –10 V Forward current transfer ratio hFE Collector current IC (mA) Ta = 25°C IB = −1.0 mA − 0.9 mA −100 − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA −100 Collector to emitter saturation voltage VCE(sat) (V) −120 −100 300 Ta = 75°C 200 25°C −25°C 100 0 −1 −3 −10 −30 −100 −300 −1 000 Collector current IC (mA) 3 UNR21XX Series Cob VCB IO VIN 5 4 3 2 VIN IO −10 000 VO = −5 V Ta = 25°C −3 000 −30 −1 000 −10 1 −300 −100 −30 −10 −1 −3 −10 −30 −1 −0.4 −100 Collector to base voltage VCB (V) VO = − 0.2 V Ta = 25°C −3 −1 −0.3 −0.1 −0.03 −3 0 −0.1 −0.3 −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance Cob (pF) 6 −0.6 −0.8 −1.0 −1.2 −1.4 −0.01 −0.1 −0.3 −1 −3 −10 −30 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR2111 IC VCE VCE(sat) IC IB = −1.0 mA −140 Ta = 25°C − 0.9 mA Collector current IC (mA) −120 − 0.8 mA − 0.7 mA −100 − 0.6 mA − 0.5 mA −80 − 0.4 mA −60 − 0.3 mA −40 − 0.2 mA −20 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 Collector to emitter saturation voltage VCE(sat) (V) −100 IC / IB = 10 −30 −10 −3 −1 −0.3 −0.03 −25°C −0.01 −0.1 −0.3 −3 −10 −30 5 4 3 2 1 −3 −10 80 40 −3 −30 Collector to base voltage VCB −100 (V) −30 −100 −300 −1 000 VIN IO VO = −5 V Ta = 25°C −100 −3 000 −30 −1 000 −10 −300 −100 −30 −10 −1 −0.4 −10 Collector current IC (mA) −3 −1 −25°C 0 −1 −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 0 −0.1 −0.3 25°C 120 IO VIN –10 000 Output current IO (µA) Collector output capacitance Cob (pF) −1 Ta = 75°C VCE = −10 V Collector current IC (mA) Cob VCB 4 Ta = 75°C 25°C −0.1 Collector to emitter voltage VCE (V) 6 hFE IC 160 Forward current transfer ratio hFE −160 VO = − 0.2 V Ta = 25°C −3 −1 −0.3 −0.1 −0.03 −0.6 −0.8 −1.0 −1.2 Input voltage VIN (V) SJH00006BED −1.4 −0.01 −0.1 −0.3 −1 −3 −10 −30 Output current IO (mA) −100 UNR21XX Series Characteristics charts of UNR2112 IC VCE VCE(sat) IC Ta = 25°C IB = −1.0 mA − 0.9mA − 0.8mA − 0.7mA − 0.6mA −140 Collector current IC (mA) −120 −100 − 0.5mA −80 − 0.4mA −60 − 0.3mA −40 − 0.2mA − 0.1mA −20 0 0 −2 −4 −6 −8 −10 −12 Collector to emitter saturation voltage VCE(sat) (V) −100 IC / IB = 10 −30 −10 −3 −1 −0.3 −0.03 −25°C −0.01 −0.1 −0.3 −1 −3 −10 −30 VCE = −10 V 300 Ta = 75°C 200 25°C −25°C 100 0 −1 −100 −3 IO VIN 4 3 2 −100 −300 −1 000 −100 VO = −5 V Ta = 25°C −3 000 −30 −1 000 −10 Output current IO (µA) 5 −30 VIN IO −10 000 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C −10 Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance Cob (pF) Ta = 75°C 25°C −0.1 Collector to emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE −160 −300 −100 −30 −10 VO = − 0.2 V Ta = 25°C −3 −1 −0.3 −0.1 1 −3 0 −0.1 −0.3 −1 −3 −10 −30 −1 −0.4 −100 Collector to base voltage VCB (V) −0.03 −0.6 −0.8 −1.0 −1.2 −1.4 −0.01 −0.1 −0.3 Input voltage VIN (V) −1 −3 −10 −30 −100 Output current IO (mA) Characteristics charts of UNR2113 IC VCE VCE(sat) IC − 0.9 mA − 0.8 mA − 0.7 mA −120 Collector current IC (mA) Ta = 25°C − 0.6 mA −100 − 0.5 mA −80 − 0.4 mA −60 − 0.3 mA −40 − 0.2 mA −20 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 Collector to emitter voltage VCE (V) Collector to emitter saturation voltage VCE(sat) (V) IB = −1.0 mA −140 −100 hFE IC IC / IB = 10 −30 −10 −3 −1 −0.3 Ta = 75°C 25°C −0.1 −0.03 400 −25°C −0.01 −0.1 −0.3 −1 −3 −10 −30 Collector current IC (mA) SJH00006BED VCE = −10 V Forward current transfer ratio hFE −160 −100 Ta = 75°C 300 25°C 200 −25°C 100 0 −1 −3 −10 −30 −100 −300 −1 000 Collector current IC (mA) 5 UNR21XX Series Cob VCB IO VIN 5 4 3 2 VIN IO −10 000 VO = −5 V Ta = 25°C −3 000 −30 −1 000 −10 −300 −100 −30 −10 1 −3 0 −0.1 −0.3 −1 −3 −10 −30 −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance Cob (pF) 6 −1 −0.4 −100 Collector to base voltage VCB (V) VO = − 0.2 V Ta = 25°C −3 −1 −0.3 −0.1 −0.03 −0.6 −0.8 −1.0 −1.2 −1.4 −0.01 −0.1 −0.3 Input voltage VIN (V) −1 −3 −10 −30 −100 Output current IO (mA) Characteristics charts of UNR2114 IC VCE VCE(sat) IC IB = −1.0 mA Collector current IC (mA) −120 −100 − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA −60 − 0.3 mA − 0.2 mA −40 − 0.1 mA −20 0 0 −2 −4 −6 −8 −10 −12 IC / IB = 10 −30 −10 −3 −1 −0.3 Ta = 75°C −0.1 25°C −25°C −0.01 −0.1 −0.3 −1 −10 −30 2 1 −10 25°C −25°C 100 −3 −30 −100 −30 −100 −300 −1 000 VIN IO VO = −5 V Ta = 25°C −1 000 −3 000 −300 −1 000 −100 −300 −100 –30 −10 −1 −0.4 −10 Collector current IC (mA) −3 −3 200 0 −1 −100 Input voltage VIN (V) 3 Collector to base voltage VCB (V) 6 −3 –10 000 Output current IO (µA) Collector output capacitance Cob (pF) 4 −1 Ta = 75°C IO VIN f = 1 MHz IE = 0 Ta = 25°C 0 −0.1 −0.3 300 Collector current IC (mA) Cob VCB 5 VCE = −10 V −0.03 Collector to emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE Ta = 25°C −140 Collector to emitter saturation voltage VCE(sat) (V) −100 −160 VO = − 0.2 V Ta = 25°C −30 −10 −3 −1 −0.3 −0.6 −0.8 −1.0 −1.2 Input voltage VIN (V) SJH00006BED −1.4 −0.1 −0.1 −0.3 −1 −3 −10 −30 Output current IO (mA) −100 UNR21XX Series Characteristics charts of UNR2115 IC VCE VCE(sat) IC Ta = 25°C IB = −1.0 mA −140 − 0.9 mA − 0.8 mA − 0.7 mA Collector current IC (mA) −120 − 0.6 mA −100 − 0.5 mA − 0.4 mA −80 − 0.3 mA −60 − 0.2 mA −40 − 0.1 mA −20 Collector to emitter saturation voltage VCE(sat) (V) −100 IC / IB = 10 −30 −10 −3 −1 Ta = 75°C −0.3 25°C −0.1 VCE = −10 V 300 Ta = 75°C 200 25°C −25°C 100 −0.03 0 0 −2 −4 −6 −8 −10 −12 −25°C −0.01 −0.1 −0.3 −1 Collector to emitter voltage VCE (V) −10 −30 2 −1 000 −10 −300 −100 −30 −10 −10 −30 −1 −0.4 −100 Collector to base voltage VCB (V) −100 −300 −1 000 VO = − 0.2 V Ta = 25°C −3 −1 −0.3 −0.1 −0.03 −3 −3 −30 −100 −30 1 −10 VIN IO VO = −5 V Ta = 25˚C Input voltage VIN (V) 3 −1 −3 Collector current IC (mA) −3 000 Output current IO (µA) 4 0 −0.1 −0.3 0 −1 −100 IO VIN −10 000 f = 1 MHz IE = 0 Ta = 25°C 5 −3 Collector current IC (mA) Cob VCB 6 Collector output capacitance Cob (pF) hFE IC 400 Forward current transfer ratio hFE −160 −0.6 −0.8 −1.0 −1.2 −1.4 −0.01 −0.1 −0.3 −1 −3 −10 −30 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR2116 IC VCE VCE(sat) IC IB = −1.0 mA −140 − 0.9 mA − 0.8 mA −120 Collector current IC (mA) Ta = 25°C − 0.7 mA − 0.6 mA −100 − 0.5 mA −80 − 0.4 mA −60 − 0.3 mA −40 − 0.2 mA −20 − 0.1 mA 0 0 −2 −4 −6 −8 −10 Collector to emitter voltage VCE −12 (V) Collector to emitter saturation voltage VCE(sat) (V) −100 hFE IC 400 IC / IB = 10 −30 −10 −3 −1 −0.3 Ta = 75°C 25°C −0.1 −0.03 VCE = −10 V Forward current transfer ratio hFE −160 300 Ta = 75°C 200 25°C −25°C 100 −25°C −0.01 −0.1 −0.3 −1 −3 −10 −30 Collector current IC (mA) SJH00006BED −100 0 −1 −3 −10 −30 −100 −300 −1 000 Collector current IC (mA) 7 UNR21XX Series Cob VCB IO VIN 4 3 2 VO = −5 V Ta = 25°C −30 −1 000 −10 −300 −100 −30 −10 1 −1 −3 −10 −30 −1 −0.4 −100 Collector to base voltage VCB (V) VO = − 0.2 V Ta = 25°C −3 −1 −0.3 −0.1 −0.03 −3 0 −0.1 −0.3 −100 −3 000 Output current IO (µA) 5 VIN IO −10 000 f = 1 MHz IE = 0 Ta = 25°C Input voltage VIN (V) Collector output capacitance Cob (pF) 6 −0.6 −0.8 −1.0 −1.2 −1.4 −0.01 −0.1 −0.3 −1 −3 −10 −30 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR2117 IC VCE VCE(sat) IC IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA Collector current IC (mA) −100 −80 −60 − 0.3 mA −40 − 0.2 mA −20 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 IC / IB = 10 −30 −10 −3 Ta = 75°C −1 −0.3 25°C −0.1 −25°C −0.01 −0.1 −0.3 −3 −10 −30 2 1 −10 −25°C −3 −30 −100 −30 −100 −300 −1 000 VIN IO VO = −5 V Ta = 25°C −100 −3 000 −30 −1 000 −10 −300 −100 −30 −10 −1 −0.4 −10 Collector current IC (mA) −3 −3 25°C 100 0 −1 −100 Input voltage VIN (V) 3 Collector to base voltage VCB (V) 8 −1 −10 000 Output current IO (µA) Collector output capacitance Cob (pF) 4 −1 Ta = 75°C 200 IO VIN f = 1 MHz IE = 0 Ta = 25°C 0 −0.1 −0.3 300 Collector current IC (mA) Cob VCB 5 VCE = −10 V −0.03 Collector to emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE Ta = 25°C −100 Collector to emitter saturation voltage VCE(sat) (V) −120 VO = − 0.2 V Ta = 25°C −3 −1 −0.3 −0.1 −0.03 −0.6 −0.8 −1.0 −1.2 Input voltage VIN (V) SJH00006BED −1.4 −0.01 −0.1 −0.3 −1 −3 −10 −30 Output current IO (mA) −100 UNR21XX Series Characteristics charts of UNR2118 IC VCE VCE(sat) IC −100 Collector current IC (mA) −200 IB = − 1.0 mA − 0.9 mA −160 − 0.8 mA − 0.7 mA −120 − 0.6 mA − 0.5 mA − 0.4 mA − 0.3 mA −80 −40 − 0.2 mA − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 IC / IB = 10 −30 −10 −3 −1 Ta = 75°C −0.3 25°C −0.1 −0.03 −1 −3 −10 −30 2 40 −3 VO = −5 V Ta = 25°C −1 000 −10 −300 −100 −30 −10 −1 −0.4 −100 Collector to base voltage VCB (V) −30 −100 −300 −1 000 −100 −30 −3 −30 −10 Collector current IC (mA) −3 000 1 −10 −25°C 0 −1 −100 Input voltage VIN (V) 3 −3 25°C VIN IO −10 000 Output current IO (µA) Collector output capacitance Cob (pF) 4 −1 Ta = 75°C 80 IO VIN f = 1 MHz IE = 0 Ta = 25°C 0 −0.1 −0.3 120 Collector current IC (mA) Cob VCB 5 VCE = −10 V −25°C −0.01 −0.1 −0.3 Collector to emitter voltage VCE (V) 6 hFE IC 160 Forward current transfer ratio hFE Ta = 25°C Collector to emitter saturation voltage VCE(sat) (V) −240 VO = − 0.2 V Ta = 25°C −3 −1 −0.3 −0.1 −0.03 −0.6 −0.8 −1.0 −1.2 −1.4 −0.01 −0.1 −0.3 Input voltage VIN (V) −1 −3 −10 −30 −100 Output current IO (mA) Characteristics charts of UNR2119 IC VCE VCE(sat) IC −100 Collector current IC (mA) −200 IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA −160 −120 −80 − 0.6 mA − 0.5 mA − 0.4 mA − 0.3 mA − 0.2 mA − 0.1 mA −40 0 0 −2 −4 −6 −8 −10 −12 Collector to emitter voltage VCE (V) hFE IC IC / IB = 10 −30 −10 −3 −1 Ta = 75°C −0.3 25°C −0.1 −0.03 160 VCE = −10 V Forward current transfer ratio hFE Ta = 25°C Collector to emitter saturation voltage VCE(sat) (V) −240 120 Ta = 75°C 80 25°C −25°C 40 −25°C −0.01 −0.1 −0.3 −1 −3 −10 −30 Collector current IC (mA) SJH00006BED −100 0 −1 −3 −10 −30 −100 −300 −1 000 Collector current IC (mA) 9 UNR21XX Series Cob VCB IO VIN 4 3 2 VO = −5 V Ta = 25°C −100 −3 000 −30 −1 000 −10 Input voltage VIN (V) 5 VIN IO −10 000 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance Cob (pF) 6 −300 −100 −30 −10 VO = −0.2 V Ta = 25°C −3 −1 −0.3 −0.1 1 −0.03 −3 0 −0.1 −0.3 −1 −3 −10 −30 −1 −0.4 −100 Collector to base voltage VCB (V) −0.6 −0.8 −1.0 −1.2 −1.4 −0.01 −0.1 −0.3 −1 −3 −10 −30 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR211D IC VCE Collector current IC (mA) −50 Ta = 25˚C −40 − 0.3 mA −30 − 0.2 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA −20 − 0.1 mA −10 −30 −10 −3 −1 0 −2 −4 −6 −8 −10 −12 Ta = 75°C −0.3 25°C −0.1 −0.03 0 −3 −10 −30 2 1 −10 −3 −30 −100 −30 −100 −300 −1 000 VIN IO VO = −5 V Ta = 25°C −100 −3 000 −30 −1 000 −10 −300 −100 −30 −10 −1 −1.5 −10 Collector current IC (mA) VO = − 0.2 V Ta = 25°C −3 −1 −0.3 −0.1 −0.03 −3 −3 −25°C 40 0 −1 −100 Input voltage VIN (V) 3 Collector to base voltage VCB (V) 10 −1 −10 000 Output current IO (µA) Collector output capacitance Cob (pF) 4 −1 25°C 80 IO VIN f = 1 MHz IE = 0 Ta = 25°C 0 −0.1 −0.3 Ta = 75°C 120 Collector current IC (mA) Cob VCB 5 VCE = −10 V −25°C −0.01 −0.1 −0.3 Collector to emitter voltage VCE (V) 6 hFE IC 160 IC / IB = 10 Forward current transfer ratio hFE IB = − 1.0 mA − 0.9 mA − 0.8 mA VCE(sat) IC −100 Collector to emitter saturation voltage VCE(sat) (V) −60 −2.0 −2.5 −3.0 −3.5 Input voltage VIN (V) SJH00006BED −4.0 −0.01 −0.1 −0.3 −1 −3 −10 −30 Output current IO (mA) −100 UNR21XX Series Characteristics charts of UNR211E IC VCE −40 − 0.3 mA −30 − 0.6 mA − 0.5 mA − 0.4 mA −20 − 0.2 mA − 0.1 mA −10 0 −2 −4 −6 −8 −10 −12 IC / IB = 10 −30 −10 −3 −1 Ta = 75°C −0.3 25°C −0.1 −0.03 0 −25°C −0.01 −0.1 −0.3 −1 Cob VCB −30 3 2 1 −3 −10 100 25°C −25°C −3 −30 VO = −5 V Ta = 25°C −30 −1 000 −10 −300 −100 −30 −10 −100 −300 −1 000 VO = − 0.2 V Ta = 25°C −3 −1 −0.3 −0.1 −0.03 −2.0 −2.5 −3.0 −3.5 −4.0 −0.01 −0.1 −0.3 Input voltage VIN (V) Collector to base voltage VCB (V) −30 −100 −3 000 −1 −1.5 −100 −10 Collector current IC (mA) −3 −1 Ta = 75°C 0 −1 −100 Input voltage VIN (V) 4 0 −0.1 −0.3 200 VIN IO −10 000 Output current IO (µA) Collector output capacitance Cob (pF) −10 300 IO VIN f = 1 MHz IE = 0 Ta = 25°C 5 −3 VCE = −10 V Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE IB = −1.0 mA Ta = 25°C − 0.9 mA − 0.8 mA − 0.7 mA −50 Collector current IC (mA) VCE(sat) IC −100 Collector to emitter saturation voltage VCE(sat) (V) −60 −1 −3 −10 −30 −100 Output current IO (mA) Characteristics charts of UNR211F IC VCE IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA −160 −120 − 0.5 mA −80 − 0.4 mA − 0.3 mA −40 − 0.2 mA 0 0 −2 −4 −6 −8 − 0.1 mA −10 −12 Collector to emitter voltage VCE (V) hFE IC IC / IB = 10 −30 −10 −3 −1 Ta = 75°C −0.3 25°C −0.1 −0.03 160 VCE = −10 V Forward current transfer ratio hFE Ta = 25°C −200 Collector current IC (mA) VCE(sat) IC −100 Collector to emitter saturation voltage VCE(sat) (V) −240 120 Ta = 75°C 25°C 80 −25°C 40 −25°C −0.01 −0.1 −0.3 −1 −3 −10 −30 Collector current IC (mA) SJH00006BED −100 0 −1 −3 −10 −30 −100 −300 −1 000 Collector current IC (mA) 11 UNR21XX Series Cob VCB IO VIN 4 3 2 VO = −5 V Ta = 25°C −100 −3 000 −30 −1 000 −10 Input voltage VIN (V) 5 VIN IO −10 000 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance Cob (pF) 6 −300 −100 −30 −10 VO = − 0.2 V Ta = 25°C −3 −1 −0.3 −0.1 1 −3 0 −0.1 −0.3 −1 −3 −10 −30 −1 −0.4 −100 −0.03 −0.6 Collector to base voltage VCB (V) −0.8 −1.0 −1.2 −1.4 −0.01 −0.1 −0.3 Input voltage VIN (V) −1 −3 −10 −30 −100 Output current IO (mA) Characteristics charts of UNR211H IC VCE VCE(sat) IC −100 Collector current IC (mA) −100 −80 IB = − 0.5 mA − 0.4 mA −60 − 0.3 mA −40 − 0.2 mA −20 − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 IC / IB = 10 −10 −1 Ta = 75°C 25°C −0.1 −25°C −0.01 −1 Collector to emitter voltage VCE (V) −10 −3 −100 Input voltage VIN (V) Collector output capacitance Cob (pF) 4 3 2 −3 −10 −30 Collector to base voltage VCB −100 (V) VO = − 0.2 V Ta = 25°C −10 −1 −0.1 −0.01 −0.1 −0.3 −1 −3 −10 −30 Output current IO (mA) SJH00006BED VCE = −10 V 200 160 Ta = 75°C 120 25°C 80 −25°C 40 0 −0.1 −0.3 −1 −3 −10 −30 Collector current IC (mA) 1 0 −1 12 −100 −300 −1 000 VIN IO f = 1 MHz IE = 0 Ta = 25°C 5 −30 Collector current IC (mA) Cob VCB 6 hFE IC 240 Forward current transfer ratio hFE Ta = 25°C Collector to emitter saturation voltage VCE(sat) (V) −120 −100 −100 UNR21XX Series Characteristics charts of UNR211L IC VCE VCE(sat) IC −100 Collector current IC (mA) −200 −160 IB = −1.0 mA −120 − 0.8 mA − 0.6 mA −80 − 0.4 mA −40 − 0.2 mA 0 0 –2 –4 –6 –8 –10 –12 IC / IB = 10 −30 −10 −3 −1 Ta = 75°C 25°C −0.3 −25°C −0.1 − 0.03 − 0.01 −1 Collector to emitter voltage VCE (V) −3 −10 120 Ta = 75°C 80 25°C −25°C 40 −3 −10 −30 −100 −300 −1 000 Collector current IC (mA) VIN IO Input voltage VIN (V) Collector output capacitance Cob (pF) 160 0 −1 −100 −300 −1 000 −100 f = 1 MHz IE = 0 Ta = 25°C 5 −30 VCE = −10 V 200 Collector current IC (mA) Cob VCB 6 hFE IC 240 Forward current transfer ratio hFE Ta = 25°C Collector to emitter saturation voltage VCE(sat) (V) −240 4 3 2 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 −1 −3 −10 −30 − 0.01 − 0.1 − 0.3 −100 Collector to base voltage VCB (V) −1 −3 −10 −30 −100 Output current IO (mA) Characteristics charts of UNR211M IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA 160 120 − 0.5 mA 80 − 0.4 mA − 0.3 mA 40 − 0.2 mA − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 Collector to emitter voltage VCE (V) −10 hFE IC 500 IC / IB = 10 −3 Forward current transfer ratio hFE Ta = 25°C 200 Collector current IC (mA) VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) IC VCE 240 −1 −0.3 Ta = 75°C 25°C −0.1 −0.03 −25°C −0.01 VCE = −10 V 400 300 Ta = 75°C 200 25°C −25°C 100 −0.003 −0.001 −1 −3 −10 −30 −100 −300 −1 000 Collector current IC (mA) SJH00006BED 0 −1 −3 −10 −30 −100 −300 −1 000 Collector current IC (mA) 13 UNR21XX Series Cob VCB IO VIN VIN IO 10−4 f = 1 MHz IE = 0 Ta = 25°C VO = −5 V Ta = 25°C −100 VO = − 0.2 V Ta = 25°C −30 8 6 4 10−3 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) 10 10−2 10−1 2 −10 −3 −1 −0.3 −0.1 −0.03 0 −0.1 −0.3 −1 −3 −10 −30 1 −0.4 −100 Collector to base voltage VCB (V) −0.6 −0.8 −1.0 −1.2 −1.4 −0.01 −0.1 −0.3 Input voltage VIN (V) −1 −3 −10 −30 −100 Output current IO (mA) Characteristics charts of UNR211N VCE(sat) IC Collector current IC (mA) IB = −1.0 mA −150 − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA −125 −100 − 0.5 mA −75 − 0.4 mA −50 − 0.3 mA − 0.2 mA −25 − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 −10 IC / IB = 10 −1 −0.1 25°C −25°C −0.01 −1 −10 −100 50 0 –1 −1 000 Collector current IC (mA) −10 000 –100 –1000 VIN IO VO = −5 V Ta = 25°C −100 VO = − 0.2 V Ta = 25°C Input voltage VIN (V) −10 –100 2 –10 Collector current IC (mA) −1 000 3 −25°C 100 IO VIN 4 −1 −0.1 –10 1 0 –1 –10 –100 Collector to base voltage VCB (V) 14 25°C 150 Ta = 75°C Output current IO (µA) Collector output capacitance Cob (pF) 5 Ta = 75°C 200 Cob VCB f = 1 MHz IE = 0 Ta = 25°C VCE = −10 V 250 Collector to emitter voltage VCE (V) 6 hFE IC 300 Forward current transfer ratio hFE Ta = 25°C −175 Collector to emitter saturation voltage VCE(sat) (V) IC VCE −200 –1 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 Input voltage VIN (V) SJH00006BED −1.6 −0.01 −0.1 −1 −10 Output current IO (mA) −100 UNR21XX Series Characteristics charts of UNR211T IC VCE VCE(sat) IC Ta = 25°C −175 Collector current IC (mA) −150 IB = −1.0 mA −125 –0.9 mA –0.8 mA –0.7 mA –0.6 mA –0.5 mA −100 −75 − 0.3 mA − 0.2 mA −25 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −100 Ta = 75°C 200 25°C 150 −25°C 100 50 0 −1 −1 000 −10 −100 −1 000 Collector current IC (mA) VIN IO −100 VO = −5 V Ta = 25°C Input voltage VIN (V) −1 000 Output current IO (µA) −10 VCE = −10 V 250 Collector current IC (mA) IO VIN −10 000 25°C −25°C Collector to emitter voltage VCE (V) 300 IC / IB = 10 Ta = 75°C − 0.01 −1 −12 hFE IC −1 − 0.1 − 0.4 mA −50 −10 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) −200 −100 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 −10 −1 − 0.4 − 0.6 − 0.8 −1 −1.2 − 0.01 − 0.1 −1.4 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR211V − 0.9 mA − 0.8 mA −8 − 0.7 mA − 0.6 mA −6 − 0.5 mA −4 − 0.4 mA − 0.3 mA −2 0 − 0.2 mA − 0.1 mA 0 −2 −4 −6 −8 −10 −12 Collector to emitter voltage VCE (V) −10 hFE IC 12 IC / IB = 10 VCE = −10 V Ta = 75°C Forward current transfer ratio hFE Ta = 25°C IB = −1.0 mA −10 Collector current IC (mA) VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) IC VCE −12 −1 Ta = 75°C 25°C −0.1 −0.01 −1 −25°C −10 −100 Collector current IC (mA) SJH00006BED −1 000 10 25°C 8 6 −25°C 4 2 0 –1 –10 –100 –1000 Collector current IC (mA) 15 UNR21XX Series IO VIN VIN IO −10 000 VO = −5 V Ta = 25°C VO = − 0.2 V Ta = 25°C −10 Input voltage VIN (V) −1 000 Output current IO (µA) −100 −100 −1 −0.1 −10 −1 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −0.01 −0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR211Z VCE(sat) IC Collector current IC (mA) −150 IB = −1.0 mA −125 − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −100 −75 − 0.4 mA −50 − 0.3 mA − 0.2 mA −25 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 −10 −1 Ta = 75°C − 0.1 25°C −25°C − 0.01 −1 −10 Cob VCB −10 000 −25°C 100 50 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = –5 V Ta = 25°C −100 VO = − 0.2 V Ta = 25°C 5 4 Input voltage VIN (V) −1 000 Output current IO (µA) Collector output capacitance Cob (pF) 25°C 150 0 −1 −1 000 Ta = 75°C 200 IO VIN f = 1 MHz IE = 0 Ta = 25°C −100 3 2 −10 −10 −1 − 0.1 1 0 −1 −10 Collector to base voltage VCB 16 −100 VCE = −10 V 250 Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE IC 300 IC / IB = 10 Forward current transfer ratio hFE Ta = 25°C −175 Collector to emitter saturation voltage VCE(sat) (V) IC VCE −200 −100 (V) –1 − 0.4 − 0.6 − 0.8 −1 −1.2 Input voltage VIN (V) SJH00006BED −1.4 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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