Transistors with built-in Resistor UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z (UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/511D/511E/511F/ 511H/511L/511M/511N/511T/511V/511Z) Unit: mm Silicon PNP epitaxial planer transistor 2.1±0.1 0.425 1.25±0.1 0.425 0.65 0.3 -0 3 2 ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● Marking Symbol UNR5111 6A UNR5112 6B UNR5113 6C UNR5114 6D UNR5115 6E UNR5116 6F UNR5117 6H UNR5118 6I UNR5119 6K UNR5110 6L UNR511D 6M UNR511E 6N UNR511F 6O UNR511H 6P UNR511L 6Q UNR511M EI UNR511N EW UNR511T EY UNR511V FC UNR511Z FE (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51Ω 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 2.2kΩ 4.7kΩ 2.2kΩ 4.7kΩ 22kΩ 2.2kΩ 4.7kΩ ■ Absolute Maximum Ratings (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ 47kΩ 47kΩ 47kΩ 2.2kΩ 22kΩ +0.1 0.7±0.1 0 to 0.1 ● 0.9±0.1 ■ Resistance by Part Number 0.15 -0.05 0.2 ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. S-Mini type package, allowing automatic insertion through tape packing and magazine packing. 1.3±0.1 ● 1 0.65 ■ Features 2.0±0.2 +0.1 For digital circuits 1 : Base 2 : Emitter 3 : Collector 0.2±0.1 EIAJ : SC–70 S–Mini Type Package Internal Connection R1 C B R2 E (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Collector current IC –100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Note.) The Part numbers in the Parenthesis show conventional part number. 1 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Collector cutoff current Emitter cutoff current Conditions min typ ICBO VCB = –50V, IE = 0 – 0.1 µA VCE = –50V, IB = 0 – 0.5 µA UNR5111 – 0.5 UNR5112/5114/511E/511D/511M/511N/511T – 0.2 UNR5113 – 0.1 UNR5115/5116/5117/5110 – 0.01 IEBO UNR511F/511H VEB = –6V, IC = 0 –1.0 UNR5118/511L/511V –2.0 UNR511Z – 0.4 UNR511N/511T/511V/511Z Collector to emitter voltage UNR511N/511T VCBO IC = –10µA, IE = 0 VCEO IC = –2mA, IB = 0 –50 –50 35 60 UNR5113/5114/511M 80 UNR5115*/5116*/5117*/5110* 160 hFE VCE = –10V, IC = –5mA V –50 UNR5112/511E UNR511F/511D/5119/511H V –50 UNR5111 460 30 UNR5118/511L 20 UNR511N/511T 80 400 UNR511V 6 20 UNR511Z 0 Collector to emitter saturation voltage UNR511V Output voltage high level VCE(sat) VOH Output voltage low level UNR5113 UNR511D VOL UNR511E Transition frequency UNR511Z fT 200 IC = –10mA, IB = – 0.3mA – 0.25 IC = –10mA, IB = –1.5mA – 0.25 VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2 – 0.2 VCC = –5V, VB = –10V, RL = 1kΩ – 0.2 VCC = –5V, VB = –6V, RL = 1kΩ – 0.2 VCB = –10V, IE = 1mA, f = 200MHz 80 VCB = –10V, IE = 1mA, f = 200MHz 150 UNR5111/5114/5115 10 UNR5112/5117/511T 22 UNR5116/511F/511L/511N/511Z V V VCC = –5V, VB = –3.5V, RL = 1kΩ UNR5113/5110/511D/511E V MHz 47 R1 (–30%) 4.7 UNR5118 0.51 UNR5119 1 UNR511H/511M/511V 2.2 * hFE rank classification (UNR5115/5116/5117/5110) 2 mA –1.5 Collector to base voltage Input resistance Unit ICEO UNR5119 Forward current transfer ratio max Rank Q R S hFE 160 to 260 210 to 340 290 to 460 (+30%) kΩ UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z ■ Electrical Characteristics (continued) Parameter Symbol (Ta=25˚C) Conditions min max UNR5111/5112/5113/511L 0.8 1.0 1.2 UNR5114 0.17 0.21 0.25 UNR5118/5119 0.08 0.1 0.12 UNR511D Resistance ratio typ 4.7 UNR511E UNR511F/511T UNR511H Unit 2.14 R1/R2 0.47 0.17 0.22 UNR511M 0.047 UNR511N 0.1 UNR511V 1.0 UNR511Z 0.21 0.27 3 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Common characteristics chart PT — Ta Total power dissipation PT (mW) 240 200 160 120 80 40 0 0 40 80 120 160 Ambient temperature Ta (˚C) Characteristics charts of UNR5111 IC — VCE VCE(sat) — IC IB=–1.0mA Collector current IC (mA) –140 Ta=25˚C –0.9mA –120 –0.8mA –0.7mA –100 –0.6mA –0.5mA –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=10 –30 –10 –3 –1 –0.3 –25˚C –0.03 –0.01 –0.1 –0.3 –10 –10000 –30 –25˚C 80 40 0 –1 –100 –3 4 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) –3 25˚C 120 IO — VIN f=1MHz IE=0 Ta=25˚C –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –0.03 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage 4 –1 Ta=75˚C VCE=–10V Collector current IC (mA) Cob — VCB 5 Ta=75˚C 25˚C –0.1 Collector to emitter voltage VCE (V) 6 hFE — IC 160 Forward current transfer ratio hFE –160 –30 –100 VCB (V) –1 –0.4 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UNR5112 IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –140 –120 –100 –0.5mA –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 –1 –0.3 –25˚C –0.03 –0.01 –0.1 –0.3 –1 –10 –30 300 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –100 –3 4 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C –10 Collector current IC (mA) IO — VIN –10000 Output current IO (µA) Collector output capacitance Cob (pF) –3 VCE=–10V Collector current IC (mA) Cob — VCB 5 Ta=75˚C 25˚C –0.1 Collector to emitter voltage VCE (V) 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA Collector to emitter saturation voltage VCE(sat) (V) –160 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –0.03 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 –1 –3 –10 –30 –100 Output current IO (mA) Input voltage VIN (V) VCB (V) Characteristics charts of UNR5113 IC — VCE VCE(sat) — IC –100 Collector current IC (mA) Ta=25˚C –0.9mA –0.8mA –0.7mA –0.6mA –120 –0.5mA –100 –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 hFE — IC 400 IC/IB=10 –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) –100 VCE=–10V Forward current transfer ratio hFE IB=–1.0mA –140 Collector to emitter saturation voltage VCE(sat) (V) –160 Ta=75˚C 300 25˚C 200 –25˚C 100 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 5 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Cob — VCB IO — VIN 4 3 2 –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 5 VIN — IO –10000 Output current IO (µA) Collector output capacitance Cob (pF) 6 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UNR5114 IC — VCE VCE(sat) — IC Ta=25˚C Collector current IC (mA) –140 IB=–1.0mA –120 –0.9mA –0.8mA –0.7mA –0.6mA –100 –0.5mA –80 –0.4mA –60 –0.3mA –0.2mA –40 –0.1mA –20 Collector to emitter saturation voltage VCE(sat) (V) –100 0 0 –2 –4 –6 –8 –10 IC/IB=10 –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –0.03 Collector to emitter voltage VCE (V) –1 –3 –10 –10000 –30 25˚C –25˚C 100 0 –1 –100 –3 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO VO=–5V Ta=25˚C –1000 –3000 –300 –1000 –100 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) 4 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –30 –10 –3 –1 1 –0.3 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage 6 Ta=75˚C 200 IO — VIN f=1MHz IE=0 Ta=25˚C 5 300 Collector current IC (mA) Cob — VCB 6 VCE=–10V –25˚C –0.01 –0.1 –0.3 –12 hFE — IC 400 Forward current transfer ratio hFE –160 –30 –100 VCB (V) –1 –0.4 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.1 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UNR5115 IC — VCE VCE(sat) — IC –100 IB=–1.0mA Collector current IC (mA) –140 –120 –0.9mA –0.8mA –0.7mA –0.6mA –100 –0.5mA –0.4mA –80 –0.3mA –60 –0.2mA –40 –0.1mA –20 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 Cob — VCB –30 300 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –100 –3 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) 4 –10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –10 –10000 f=1MHz IE=0 Ta=25˚C 5 –3 VCE=–10V Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –160 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UNR5116 IC — VCE VCE(sat) — IC IB=–1.0mA Collector current IC (mA) –140 Ta=25˚C –0.9mA –0.8mA –120 –0.7mA –0.6mA –100 –0.5mA –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 Collector to emitter saturation voltage VCE(sat) (V) –100 hFE — IC 400 IC/IB=10 –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) VCE=–10V Forward current transfer ratio hFE –160 –100 300 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 7 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Cob — VCB IO — VIN –10000 5 4 3 2 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 6 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –1 –0.4 –100 Collector to base voltage VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UNR5117 IC — VCE VCE(sat) — IC –100 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA Collector current IC (mA) –100 –80 –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 Ta=75˚C –1 –0.3 25˚C –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Collector to emitter voltage VCE (V) –10 200 Ta=75˚C 25˚C 100 –25˚C 0 –1 –100 –3 4 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 5 –30 300 IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –3 –10000 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 8 –1 VCE=–10V Collector current IC (mA) Cob — VCB 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –120 –1 –0.4 –0.03 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UNR5118 IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –200 IB=–1.0mA –0.9mA –160 –0.8mA –0.7mA –120 –0.6mA –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 Cob — VCB –30 120 Ta=75˚C 80 25˚C –25˚C 40 0 –1 –100 –3 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) 4 –10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –10 –10000 f=1MHz IE=0 Ta=25˚C 5 –3 VCE=–10V Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 160 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –240 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UNR5119 IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –200 IB=–1.0mA –0.9mA –0.8mA –0.7mA –160 –120 –80 –0.6mA –0.5mA –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 hFE — IC –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 160 IC/IB=10 –25˚C –0.01 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) –100 VCE=–10V Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –240 120 Ta=75˚C 80 25˚C –25˚C 40 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 9 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Cob — VCB f=1MHz IE=0 Ta=25˚C Output current IO (µA) 5 4 3 2 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) Collector output capacitance Cob (pF) IO — VIN –10000 6 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –1 –0.4 –100 –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) Collector to base voltage VCB (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UNR5110 IC — VCE VCE(sat) — IC –100 –60 –0.2mA –40 –0.1mA –20 0 0 –2 –4 –6 –8 –10 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –12 Collector to emitter voltage VCE (V) –10 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –100 –3 4 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 5 –30 300 IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –3 –10000 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage 10 –1 VCE=–10V Collector current IC (mA) Cob — VCB 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C IB=–1.0mA –0.9mA –100 –0.8mA –0.7mA –0.6mA –0.5mA –80 –0.4mA –0.3mA Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) –120 –30 –100 VCB (V) –1 –0.4 –0.03 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UNR511D IC — VCE VCE(sat) — IC –100 Ta=25˚C Collector current IC (mA) –50 –40 –0.3mA –30 –0.2mA –0.7mA –0.6mA –0.5mA –0.4mA –20 –0.1mA –10 0 –2 –4 –6 –8 –10 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 0 –12 –1 Cob — VCB –30 25˚C –25˚C 80 40 0 –1 –100 Ta=75˚C 120 –3 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) 4 –10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –10 –10000 f=1MHz IE=0 Ta=25˚C 5 –3 VCE=–10V Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 160 Forward current transfer ratio hFE IB=–1.0mA –0.9mA –0.8mA Collector to emitter saturation voltage VCE(sat) (V) –60 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –1.5 –100 VCB (V) –0.03 –2.0 –2.5 –3.0 –3.5 –4.0 –0.01 –0.1 –0.3 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UNR511E IC — VCE VCE(sat) — IC –100 Ta=25˚C Collector current IC (mA) –50 –40 –0.3mA –30 –0.6mA –0.5mA –0.4mA –20 –0.2mA –0.1mA –10 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 hFE — IC –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 400 IC/IB=10 –25˚C –0.01 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) VCE=–10V Forward current transfer ratio hFE IB=–1.0mA –0.9mA –0.8mA –0.7mA Collector to emitter saturation voltage VCE(sat) (V) –60 –100 300 200 Ta=75˚C 100 0 –1 25˚C –25˚C –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 11 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Cob — VCB f=1MHz IE=0 Ta=25˚C Output current IO (µA) 5 4 3 2 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) Collector output capacitance Cob (pF) IO — VIN –10000 6 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –1 –1.5 –100 –0.03 –2.0 –2.5 –3.0 –3.5 –4.0 –0.01 –0.1 –0.3 Input voltage VIN (V) Collector to base voltage VCB (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UNR511F IC — VCE VCE(sat) — IC Ta=25˚C IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA Collector current IC (mA) –200 –160 –120 –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12 Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 Collector to emitter voltage VCE (V) –10 –10000 –30 Ta=75˚C 25˚C 80 –25˚C 40 0 –1 –100 –3 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) 4 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –0.03 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage 12 –3 120 IO — VIN f=1MHz IE=0 Ta=25˚C 5 –1 VCE=–10V Collector current IC (mA) Cob — VCB 6 hFE — IC 160 Forward current transfer ratio hFE –240 –30 –100 VCB (V) –1 –0.4 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UNR511H IC — VCE VCE(sat) — IC –120 –80 IB=–0.5mA –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 IC/IB=10 –10 –1 Ta=75˚C 25˚C –0.1 –25˚C –0.01 –1 –12 Collector to emitter voltage VCE (V) –3 –30 200 160 Ta=75˚C 120 25˚C 80 –25˚C 40 0 –0.1 –0.3 –100 –300 –1000 –1 –3 –10 –30 –100 Collector current IC (mA) VIN — IO –100 f=1MHz IE=0 Ta=25˚C Input voltage VIN (V) 5 –10 VCE= –10V Collector current IC (mA) Cob — VCB 6 240 Forward current transfer ratio hFE Collector current IC (mA) –100 Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C Collector output capacitance Cob (pF) hFE — IC –100 4 3 2 VO=–0.2V Ta=25˚C –10 –1 –0.1 1 0 –1 –3 –10 –30 Collector to base voltage –0.01 –0.1 –0.3 –100 –1 –3 –10 –30 –100 Output current IO (mA) VCB (V) Characteristics charts of UNR511L IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –200 –160 IB=–1.0mA –120 –0.8mA –0.6mA –80 –0.4mA –40 –0.2mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 hFE — IC –30 –10 –3 –1 Ta=75˚C 25˚C –0.3 –25˚C –0.1 –0.03 –0.01 –1 240 IC/IB=10 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) VCE=–10V Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –240 200 160 120 Ta=75˚C 80 25˚C –25˚C 40 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 13 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Cob — VCB VIN — IO –100 f=1MHz IE=0 Ta=25˚C 5 Input voltage VIN (V) Collector output capacitance Cob (pF) 6 4 3 2 VO=–0.2V Ta=25˚C –10 –1 –0.1 1 0 –1 –3 –10 –30 Collector to base voltage –0.01 –0.1 –0.3 –100 –1 –3 –10 –30 –100 Output current IO (mA) VCB (V) Characteristics charts of UNR511M IC — VCE VCE(sat) — IC –10 Collector current IC (mA) 200 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA 160 120 –0.5mA 80 –0.4mA –0.3mA 40 –0.2mA –0.1mA 0 –2 –4 –6 –8 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –0.03 –25˚C –0.01 –0.003 –0.001 –1 0 –12 –3 Cob — VCB –30 400 300 25˚C –25˚C 100 0 –1 –100 –300 –1000 Ta=75˚C 200 –3 10–4 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C f=1MHz IE=0 Ta=25˚C –10 Collector current IC (mA) IO — VIN 10 VO=–0.2V Ta=25˚C –30 8 6 4 10–3 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) –10 VCE=–10V Collector current IC (mA) Collector to emitter voltage VCE (V) 10–2 10–1 –10 –3 –1 –0.3 –0.1 2 –0.03 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage 14 500 IC/IB=10 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 240 hFE — IC –30 –100 VCB (V) 1 –0.4 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UNR511N IC — VCE VCE(sat) — IC –10 Collector current IC (mA) –175 –150 IB=–1.0mA –125 –0.9mA –0.8mA –0.7mA –0.6mA –100 –0.5mA –75 –0.4mA –0.3mA –50 –0.2mA –25 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –1 Ta=75˚C –0.1 25˚C –25˚C –0.01 –1 –10 Cob — VCB –10000 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 –1 –1000 –10 4 3 2 –100 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –1000 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) –100 250 IO — VIN f=1MHz IE=0 Ta=25˚C 5 VCE=–10V Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 300 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –200 –100 –10 VO=–0.2V Ta=25˚C –10 –1 –0.1 1 0 –1 –10 –1 –0.4 –100 Collector to base voltage VCB (V) –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –1.4 Input voltage VIN (V) –1 –10 –100 Output current IO (mA) Characteristics charts of UNR511T IC — VCE VCE(sat) — IC –200 Collector current IC (mA) –150 IB=–1.0mA –125 –0.9mA –0.8mA –0.7mA –0.6mA –100 –0.5mA –75 –0.4mA –50 –0.3mA –0.2mA –25 –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 hFE — IC IC/IB=10 –1 Ta=75˚C –0.1 25˚C –25˚C –0.01 –1 300 –10 VCE=–10V Forward current transfer ratio hFE Ta=25˚C –175 Collector to emitter saturation voltage VCE(sat) (V) –10 –100 Collector current IC (mA) –1000 250 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 –1 –10 –100 –1000 Collector current IC (mA) 15 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z IO — VIN VIN — IO –100 VO=–5V Ta=25˚C –1000 Input voltage VIN (V) Output current IO (µA) –10000 –100 –10 –1 –0.4 –0.6 –0.8 –1 –1.2 –10 –1 –0.1 –0.01 –0.1 –1.4 VO=–0.2V Ta=25˚C Input voltage VIN (V) –1 –10 –100 Output current IO (mA) Characteristics charts of UNR511V IC — VCE VCE(sat) — IC –10 IB=–1.0mA Collector current IC (mA) –10 –0.9mA –0.8mA –8 –0.7mA –0.6mA –6 –0.5mA –4 –0.4mA –0.3mA –2 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –1 Ta=75˚C 25˚C –0.1 –25˚C –0.01 –1 –12 IO — VIN VO=–5V Ta=25˚C –1000 –100 –10 –1 –0.4 –0.6 –0.8 –1 –1.2 Input voltage VIN (V) 16 –100 –1000 –1.4 VO=–0.2V Ta=25˚C –10 –1 –0.1 –0.01 –0.1 –1 VCE=–10V –10 Output current IO (mA) Ta=75˚C 10 25˚C 8 6 –25˚C 4 2 0 –1 –10 Collector current IC (mA) VIN — IO –100 Input voltage VIN (V) Output current IO (µA) –10000 –10 Collector current IC (mA) Collector to emitter voltage VCE (V) 12 IC/IB=10 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –12 hFE — IC –100 –100 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UNR511Z IC — VCE VCE(sat) — IC –10 Collector current IC (mA) –175 –150 IB=–1.0mA –125 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –100 –75 –0.4mA –50 –0.3mA –0.2mA –25 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –1 Ta=75˚C –0.1 25˚C –25˚C –0.01 –1 –10 Cob — VCB –10000 4 3 2 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 –1 –1000 –10 –100 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –1000 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) –100 250 IO — VIN f=1MHz IE=0 Ta=25˚C 5 VCE=–10V Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 300 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –200 –100 –10 VO=–0.2V Ta=25˚C –10 –1 –0.1 1 0 –1 –10 Collector to base voltage –100 VCB (V) –1 –0.4 –0.6 –0.8 –1 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –1 –10 –100 Output current IO (mA) 17 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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