VNP49N04FI / VNB49N04 / VNV49N04 “OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNP49N04FI VNB49N04 VCLAMP RDS(ON) ILIM 42 V 20 mΩ 49 A VNV49N04 n n n n n n n n n ISOWATT220 LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION 3 1 10 3 1 TO-263 (D2PAK) 1 PowerSO-10TM ORDER CODES: DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET ISOWATT220 PowerSO-10TM TO-263 (D2PAK) DESCRIPTION The VNP49N04FI, VNB49N04, VNV49N04 are monolithic devices designed in STMicroelectronics VIPower M0 Technology, intended for replacement of standard Power 2 VNP49N04FI VNV49N04 VNB49N04 MOSFETS from DC up to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. BLOCK DIAGRAM DRAIN Overvoltage Clamp INPUT Gate Control Linear Current Limiter Over Temperature Status SOURCE January 2002 1/17 1 VNP49N04FI / VNB49N04 / VNV49N04 ABSOLUTE MAXIMUM RATING Symbol VDS VIN ID IR VESD Ptot Tj Tc T stg Value D2PAK ISOWATT220 PowerSO-10TM Drain-source Voltage (VIN=0V) Internally Clamped Input Voltage 18 Drain Current Internally Limited Reverse DC Output Current -50 Electrostatic Discharge (R=1.5KΩ, C=100pF) 2000 Total Dissipation at Tc=25°C 125 125 40 Operating Junction Temperature Internally limited Case Operating Temperature Internally limited Storage Temperature -55 to 150 Parameter CONNECTION DIAGRAM (TOP VIEW) INPUT INPUT INPUT INPUT INPUT 5 4 3 2 1 6 7 8 9 10 SOURCE SOURCE N.C. SOURCE SOURCE 3 SOURCE 2 DRAIN 1 INPUT 11 DRAIN D2PAK PowerSO-10TM 3 SOURCE 2 DRAIN 1 INPUT ISOWATT220 2/17 1 Unit V V A A V W °C °C °C VNP49N04FI / VNB49N04 / VNV49N04 THERMAL DATA Symbol Parameter Rthj-case Rthj-amb Thermal Resistance Junction-case}}} Thermal Resistance Junction-ambient MAX MAX PowerSO-10 1 50 Value D2PAK 1 62.5 ISOWATT220 3.12 62.5 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (-40°C < Tj < 125°C, unless otherwise specified) OFF Symbol VCLAMP VCLTH VINCL Parameter Drain-source Clamp Voltage Drain-source Clamp Threshold Voltage Input-Source Reverse Clamp Voltage Test Conditions Min Typ Max Unit ID=200 mA; VIN=0 34 42 50 V ID=2mA; VIN=0 33 IIN= -1mA V -1.2 -0.1 V 70 220 µA µA 250 550 µA VDS=13V; VIN=0V VDS=25V; VIN=0V IDSS Zero Input Voltage Drain Current (VIN=0V) IISS Supply Current from Input VDS=0V; VIN=10V Pin ON (*) Symbol VIN(th) Parameter Input Threshold Voltage RDS(on) Static Drain-source On Resistance Test Conditions VDS=V IN; ID + IIN=1mA VIN=10V; ID=25A VIN=5V; ID=25A Min 0.8 Typ Max 3 0.04 0.05 Unit V Ω Ω Test Conditions Min Typ Max Unit 25 30 DYNAMIC Symbol gfs (*) COSS Parameter Forward Transconductance Output Capacitance VDS=13V; ID=25A; Tc=25°C VDS=13V; f=1MHz; VIN=0V; Tc=25°C S 1100 1500 pF Typ 200 1300 800 300 1.3 3.8 12 6.1 Max 600 3600 2400 900 3.8 10.4 24 17 Unit ns ns ns ns µs µs µs µs SWITCHING (**) Symbol td(on) tr td(off) tf td(on) tr td(off) tf Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time (di/dt)on Turn-on Current Slope Qi Total Input Charge Test Conditions VDS=15V; ID=25A Vgen=10V; Rgen=10 Ω (see figure 3) VDS=15V; ID=25A Vgen=10V; Rgen=1000Ω (see figure 3) VDS=15V; ID=25A VIN=10V; Rgen=10 Ω VDS=15V; ID=25A; VIN=10V Min 25 A/µs 100 nC 3/17 1 VNP49N04FI / VNB49N04 / VNV49N04 SOURCE DRAIN DIODE Symbol VSD (*) trr (**) Qrr (**) IRRM (**) Parameter Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions ISD=25A; VIN=0V ISD=25A; di/dt=100A/µs Min Test Conditions VIN=10V; VDS=13V Min 28 28 Typ Max 1.8 Unit V ns nC A Typ 49 Max 70 Unit A 49 35 90 70 50 150 A µs µs 250 910 7.5 VDS=30V; T j=25°C (see test circuit, figure 5) PROTECTIONS Symbol ILIM tdlim (**) T jsh (**) Tjrs (**) Igf (**) Eas (**) Parameter Drain Current Limit Step Response Current Limit VIN=5V; VDS=13V VIN=10V VIN=5V Overtemperature Shutdown Overtemperature Reset Fault Sink Current 135 VIN=10V; VDS=13V Single Pulse VIN=5V; VDS=13V Starting T j=25°C; VDS=20V Avalanche Energy VIN=10V; Rgen=1KΩ; L=6mH (*) Pulsed: Pulse duration = 300µs, duty cycle 1.5% (**) Parameters guaranteed by design/characterization 4/17 2 °C 150 50 20 4 °C mA mA J VNP49N04FI / VNB49N04 / VNV49N04 PROTECTION FEATURES During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50KHz. The only difference from the user’s standpoint is that a small DC current (IISS) flows into the INPUT pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current ID to ILIM whatever the INPUT pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh. - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150°C. The device is automatically restarted when the chip temperature falls below 135°C. - STATUS FEEDBACK: in the case of an overtemperature fault condition, a status feedback is provided through the INPUT pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100Ω. The failure can be detected by monitoring the voltage at the INPUT pin, which will be close to ground potential. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(ON)). 5/17 1 VNP49N04FI / VNB49N04 / VNV49N04 Thermal Impedance for ISOWATT220 Thermal Impedance for D2PAK / PowerSO-10 Derating Curve Output Characteristics Transconductance Static Drain-Source On Resistance vs Input Voltage 6/17 1 VNP49N04FI / VNB49N04 / VNV49N04 Static Drain-Source On Resistance Static Drain-Source On Resistance Input Charge vs Input Voltage Capacitance Variations Normalized Input Temperature Threshold Voltage vs Normalized On Resistance vs. Temperature 7/17 1 VNP49N04FI / VNB49N04 / VNV49N04 Normalized On Resistance vs. Temperature Turn-on Current Slope Turn-on Current Slope Turn-off Drain-Source Voltage Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load 8/17 1 VNP49N04FI / VNB49N04 / VNV49N04 Switching Time Resistive Load Switching Time Resistive Load Current Limit vs. Junction Temperature Step Response Current Limit Source Drain Diode Forward Characteristics 9/17 1 VNP49N04FI / VNB49N04 / VNV49N04 Figure 1: Unclamped Inductive Load Test Circuits Figure 2: Unclamped Inductive Waveforms Figure 3: Switching Time Test Circuits for Resistive Load Figure 4: Input Charge Test Circuit Figure 5: Test Circuit for Inductive Load Switching and Diode Recovery Times Figure 6: Waveforms 10/17 1 VNP49N04FI / VNB49N04 / VNV49N04 ISOWATT220 MECHANICAL DATA mm. DIM. MIN. inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. A 4.4 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L2 L4 P011G 11/17 1 VNP49N04FI / VNB49N04 / VNV49N04 D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B1 0.8 1.3 0.031 0.051 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 10 E1 0.315 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 M 2.4 3.2 0.094 0.126 R V2 0.4 0º 0.015 8º 7106164 12/17 1 VNP49N04FI / VNB49N04 / VNV49N04 PowerSO-10 MECHANICAL DATA mm. DIM. MIN. A A (*) A1 B B (*) C C (*) D D1 E E2 E2 (*) E4 E4 (*) e F F (*) H H (*) h L L (*) α α (*) inch TYP 3.35 3.4 0.00 0.40 0.37 0.35 0.23 9.40 7.40 9.30 7.20 7.30 5.90 5.90 MAX. MIN. 3.65 3.6 0.10 0.60 0.53 0.55 0.32 9.60 7.60 9.50 7.60 7.50 6.10 6.30 0.132 0.134 0.000 0.016 0.014 0.013 0.009 0.370 0.291 0.366 0.283 0.287 0.232 0.232 1.35 1.40 14.40 14.35 0.049 0.047 0.543 0.545 1.80 1.10 8º 8º 0.047 0.031 0º 2º TYP. MAX. 0.144 0.142 0.004 0.024 0.021 0.022 0.0126 0.378 0.300 0.374 300 0.295 0.240 0.248 1.27 0.050 1.25 1.20 13.80 13.85 0.053 0.055 0.567 0.565 0.50 0.002 1.20 0.80 0º 2º 0.070 0.043 8º 8º (*) Muar only POA P013P B 0.10 A B 10 H E E2 E4 1 SEATING PLANE e B DETAIL ”A” h A C 0.25 D = D1 = = = SEATING PLANE A F A1 A1 L DETAIL ”A” α P095A 13/17 VNP49N04FI / VNB49N04 / VNV49N04 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix) A 16.90 C 12.20 5.08 1.60 B 3.50 9.75 All dimensions are in millimeters Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) 50 500 532 6 21.3 0.6 All dimensions are in mm. TAPE AND REEL SHIPMENT (suffix “13TR”) REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 1000 1000 330 1.5 13 20.2 24.4 60 30.4 All dimensions are in mm. TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 (± 0.1) P D (± 0.1/-0) D1 (min) F (± 0.05) K (max) P1 (± 0.1) All dimensions are in mm. 24 4 16 1.5 1.5 11.5 6.5 2 End Start Top cover tape No components Components 500mm min Empty components pockets saled with cover tape. User direction of feed 14/17 1 No components 500mm min VNP49N04FI / VNB49N04 / VNV49N04 PowerSO-10 SUGGESTED PAD LAYOUT TUBE SHIPMENT (no suffix) 14.6-14.9 CASABLANCA B 10.8- 11 MUAR C 6.30 C A A 0.67-0.73 1 9.5 10 9 2 3 B 0.54-0.6 All dimensions are in mm. 8 7 6 4 5 1.27 Base Q.ty Bulk Q.ty Tube length (± 0.5) A Casablanca Muar 50 50 1000 1000 532 532 B 10.4 16.4 4.9 17.2 C (± 0.1) 0.8 0.8 TAPE AND REEL SHIPMENT (suffix “13TR”) REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 600 600 330 1.5 13 20.2 24.4 60 30.4 All dimensions are in mm. TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 (± 0.1) P D (± 0.1/-0) D1 (min.) F (± 0.05) K (max) P1 (± 0.1) All dimensions are in mm. 24 4 24 1.5 1.5 11.5 6.5 2 End Start Top cover tape No components Components No components 500mm min Empty components pockets saled with cover tape. 500mm min User direction of feed 15/17 1 VNP49N04FI / VNB49N04 / VNV49N04 ISOWATT220 TUBE SHIPMENT (no suffix) A Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) B All dimensions are in mm. C 16/17 1 50 1000 532 5.5 31.4 0.75 VNP49N04FI / VNB49N04 / VNV49N04 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2002 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 17/17