STMICROELECTRONICS VNS3NV04DPTR-E

VNS3NV04DP-E
OMNIFET II
fully autoprotected Power MOSFET
Features
Max on-state resistance (per ch.)
RON
120 mΩ
Current limitation (typ)
ILIMH
3.5 A
VCLAMP
40 V
Drain-source clamp voltage
■
ECOPACK®: lead free and RoHS compliant
■
Automotive Grade: compliance with AEC
guidelines
■
Linear current limitation
■
Thermal shutdown
■
Short circuit protection
■
Integrated clamp
■
Low current drawn from input pin
■
Diagnostic feedback through input pin
■
ESD protection
■
Direct access to the gate of the Power
MOSFET (analog driving)
■
Compatible with standard Power MOSFET
Table 1.
SO-8
Description
The VNS3NV04DP-E device is made up of two
monolithic chips (OMNIFET II) housed in a
standard SO-8 package. The OMNIFET II is
designed using STMicroelectronics™ VIPower™
M0-3 technology and is intended for replacement
of standard Power MOSFETs in up to 50 kHz DC
applications.
Built-in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring
voltage at the input pin
Device summary
Order codes
Package
SO-8
March 2011
Tube
Tape and reel
VNS3NV04DP-E
VNS3NV04DPTR-E
Doc ID 018529 Rev 1
1/21
www.st.com
1
Contents
VNS3NV04DP-E
Contents
1
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
2/21
2.1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.1
Overvoltage clamp protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.2
Linear current limiter circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.3
Overtemperature and short circuit protection . . . . . . . . . . . . . . . . . . . . . . 16
3.4
Status feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.1
ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2
SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.3
SO-8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Doc ID 018529 Rev 1
VNS3NV04DP-E
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Doc ID 018529 Rev 1
3/21
List of figures
VNS3NV04DP-E
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
4/21
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Static drain-source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Static drain-source on resistance vs input voltage (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . 12
Static drain-source on resistance vs input voltage (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . 12
Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Static drain-source on resistance vs Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Turn-on current slope (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Turn-on current slope (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Input voltage vs input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Turn-off drain source voltage slope (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Turn-off drain-source voltage slope (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Switching time resistive load (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Switching time resistive load (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Normalized on resistance vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Normalized current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
SO-8 package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
SO-8 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Doc ID 018529 Rev 1
VNS3NV04DP-E
1
Block diagram and pin description
Block diagram and pin description
Figure 1.
Block diagram
DRAIN2
DRAIN1
OVERVOLTAGE
CLAMP
OVERVOLTAGE
CLAMP
INPUT1
GATE
CONTROL
GATE
CONTROL
OVER
TEMPERATURE
LINEAR
CURRENT
LIMITER
LINEAR
CURRENT
LIMITER
SOURCE1
Figure 2.
INPUT2
OVER
TEMPERATURE
SOURCE2
Configuration diagram (top view)
SOURCE 1
1
8
DRAIN 2
SOURCE 2
INPUT 2
DRAIN 1
DRAIN 1
INPUT 1
4
Doc ID 018529 Rev 1
5
DRAIN 2
5/21
Electrical specifications
2
VNS3NV04DP-E
Electrical specifications
Figure 3.
Current and voltage conventions
RIN1
IIN1
ID1
INPUT 1
VIN1
IIN2
DRAIN 1
RIN2
ID2
INPUT 2
VIN2
2.1
SOURCE 1
VDS1
DRAIN 2
VDS1
SOURCE 2
Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
program and other relevant quality document.
Table 2.
Absolute maximum ratings
Symbol
Value
Unit
VDSn
Drain-Source Voltage (VINn = 0 V)
Internally clamped
V
VINn
Input voltage
Internally clamped
V
IINn
Input current
+/- 20
mA
220
Ω
Internally limited
A
RIN MINn
Minimum input series impedance
IDn
Drain current
IRn
Reverse DC output current
-5.5
A
VESD1
Electrostatic discharge (R = 1.5 KΩ, C = 100 pF)
4000
V
VESD2
Electrostatic discharge on output pins only (R = 330 Ω,
C = 150 pF)
16500
V
4
Ω
Ptot
Total dissipation at Tc = 25 °C
Tj
Operating junction temperature
Internally limited
°C
Tc
Case operating temperature
Internally limited
°C
-55 to 150
°C
Tstg
6/21
Parameter
Storage temperature
Doc ID 018529 Rev 1
VNS3NV04DP-E
2.2
Electrical specifications
Thermal data
Table 3.
Thermal data
Symbol
Parameter
Rthj-lead
Thermal resistance junction-lead (per channel)
Rthj-amb
Thermal resistance junction-ambient
Max value
Unit
30
°C/W
80(1)
°C/W
2
1. When mounted on a standard single-sided FR4 board with 50mm of Cu (at least 35 μm thick) connected
to all DRAIN pins of the relative channel
2.3
Electrical characteristics
Values specified in this section are for -40 °C < Tj < 150 °C, unless otherwise stated.
Table 4.
Symbol
Off
Parameter
Test conditions
Min
Typ
Max
Unit
45
55
V
VCLAMP
Drain-source clamp
voltage
VIN = 0 V; ID = 1.5 A
40
VCLTH
Drain-source clamp
threshold voltage
VIN = 0 V; ID = 2 mA
36
VINTH
Input threshold
voltage
VDS = VIN; ID = 1 mA
0.5
IISS
Supply current from
input pin
VDS = 0 V; VIN = 5 V
Input-source clamp
voltage
IIN = 1 mA
6
VINCL
IIN = -1 mA
-1
IDSS
Zero input voltage
drain current
(VIN = 0 V)
Table 5.
Symbol
RDS(on)
V
2.5
V
100
150
µA
6.8
8
V
-0.3
V
VDS = 13 V; VIN = 0 V; Tj = 25 °C
30
µA
VDS = 25 V; VIN = 0 V
75
µA
On
Parameter
Test conditions
Static drain-source on VIN = 5 V; ID = 1.5 A; Tj = 25 °C
resistance
VIN = 5 V; ID = 1.5 A
Min
Typ
Max
Unit
—
—
120
mΩ
—
—
240
mΩ
Min
Typ
Max
Unit
Tj = 25 °C, unless otherwise specified
Table 6.
Symbol
Dynamic
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDD = 13 V; ID = 1.5 A
—
5.0
—
S
COSS
Output capacitance
VDS = 13 V; f = 1 MHz; VIN = 0 V
—
150
—
pF
Doc ID 018529 Rev 1
7/21
Electrical specifications
Table 7.
Symbol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VNS3NV04DP-E
Switching
Parameter
Test conditions
Turn-on delay time
VDD = 15 V; ID = 1.5 A;
Vgen = 5 V; Rgen = RIN
MIN = 220 Ω (see Figure 4)
Rise time
Turn-off delay time
Fall time
Turn-on delay time
VDD = 15 V; ID = 1.5 A;
Vgen = 5 V; Rgen = 2.2 KΩ
(see Figure 4)
Rise time
Turn-off delay time
Fall time
(dI/dt)on Turn-on current slope
Qi
Table 8.
Symbol
VSD(1)
Min
Total input charge
Typ
Max
Unit
90
300
ns
250
750
ns
450
1350
ns
250
750
ns
0.45
1.35
µs
2.5
7.5
µs
3.3
10.0
µs
2.0
6.0
µs
VDD = 15 V; ID = 1.5 A;
Vgen = 5 V;
Rgen = RIN MIN = 220 Ω
4.7
A/µs
VDD = 12 V; ID = 1.5 A; VIN = 5 V;
Igen = 2.13 mA (see Figure 7)
8.5
nC
Source drain diode
Parameter
Test conditions
Forward on voltage
Min
ISD = 1.5 A; VIN = 0 V
trr
Reverse recovery time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
ISD = 1.5 A; dI/dt = 12 A/µs;
VDD = 30 V; L = 200 µH
(see Figure 5)
Typ
Max
Unit
0.8
V
107
ns
37
µC
0.7
A
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
-40 °C < Tj < 150 °C, unless otherwise specified
Table 9.
Symbol
8/21
Protections
Parameter
Test conditions
Min Typ Max Unit
Ilim
Drain current limit
VIN = 5 V; VDS = 13 V
tdlim
Step response current
limit
VIN = 5 V; VDS = 13 V
Tjsh
Overtemperature
shutdown
150 175
Tjrs
Overtemperature reset
135
Igf
Fault sink current
VIN = 5 V; VDS = 13 V; Tj = Tjsh
10
Eas
Single pulse avalanche
energy
Starting Tj = 25 °C; VDD = 24 V;
VIN = 5 V; Rgen = RIN MIN = 220 Ω;
L = 24 mH (see Figure 6
and Figure 8)
100
Doc ID 018529 Rev 1
3.5
5
7
10
A
µs
200
°C
°C
15
20
mA
mJ
VNS3NV04DP-E
Figure 4.
Electrical specifications
Switching time test circuit for resistive load
VD
Rgen
Vgen
ID
90%
tr
tf
10%
t
td(on)
Vgen
td(off)
t
Figure 5.
Test circuit for diode recovery times
A
A
D
I
FAST
DIODE
OMNIFET
S
L=100uH
B
B
220Ω
D
Rgen
VDD
I
Vgen
OMNIFET
S
8.5 Ω
Doc ID 018529 Rev 1
9/21
Electrical specifications
Figure 6.
VNS3NV04DP-E
Unclamped inductive load test circuits
RGEN
VIN
PW
Figure 7.
Input charge test circuit
VIN
GEN
ND8003
10/21
Doc ID 018529 Rev 1
VNS3NV04DP-E
Figure 8.
Electrical specifications
Unclamped inductive waveforms
Doc ID 018529 Rev 1
11/21
Electrical specifications
2.4
VNS3NV04DP-E
Electrical characteristics curves
Figure 9.
Source-drain diode forward
characteristics
Figure 10. Static drain-source on
resistance
Vsd (mV)
Rds(on) (mohms)
1100
1000
1050
Tj=-40ºC
900
Vin=0V
1000
Vin=2.5V
800
950
700
900
600
850
500
800
400
750
300
700
200
650
100
Tj=25ºC
Tj=150ºC
0
600
0
1
2
3
4
5
6
7
8
9
10
11
0.05
12
0.1
0.15
0.2
0.25
Figure 11.
Derating curve
0.3
0.35
0.4
0.45
0.5
0.55
Id(A)
Id (A)
Figure 12. Static drain-source on
resistance vs input voltage
(part 1)
Rds(on) (mohms)
300
275
250
Tj=150ºC
225
200
175
Id=3.5A
Id=1A
150
Tj=25ºC
125
100
Tj=-40ºC
75
Id=3.5A
Id=1A
50
Id=3.5A
Id=1A
25
0
3
3.5
4
4.5
5
5.5
6
6.5
Vin(V)
Figure 13. Static drain-source on
resistance vs input voltage
(part 2)
Figure 14. Transconductance
Gfs (S)
Rds(on) (mohms)
250
11
225
10
Id=1.5A
200
Vds=13V
9
Tj=-40ºC
Tj=25ºC
8
175
Tj=150ºC
150
Tj=150ºC
7
6
125
5
100
4
75
3
Tj=25ºC
50
2
Tj=-40ºC
25
1
0
0
3
3.5
4
4.5
5
5.5
6
6.5
12/21
0
0.5
1
1.5
2
2.5
3
Id (A)
Vin(V)
Doc ID 018529 Rev 1
3.5
4
4.5
5
5.5
VNS3NV04DP-E
Electrical specifications
Figure 15. Static drain-source on
resistance vs Id
Figure 16. Transfer characteristics
Idon (A)
Rds(on) (mohms)
250
6
225
5.5
Vin=5V
200
Vds=13.5V
5
Tj=150ºC
4.5
175
4
150
Tj=150ºC
3.5
125
3
Tj=25ºC
100
Tj=-40ºC
2.5
2
75
1.5
50
Tj= - 40ºC
Tj=25ºC
1
25
0.5
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
1.5
2
2.5
3
Id (A)
3.5
4
4.5
5
5.5
6
Vin (V)
Figure 17. Turn-on current slope (part 1) Figure 18. Turn-on current slope (part 2)
di/dt(A/us)
di/dt(A/usec)
5
1.75
4.5
Vin=5V
Vdd=15V
Id=1.5A
4
3.5
1.5
Vin=3.5V
Vdd=15V
Id=1.5A
1.25
3
1
2.5
0.75
2
1.5
0.5
1
0.25
0.5
0
0
0
250
500
0
750 1000 1250 1500 1750 2000 2250 2500
250
500
750 1000 1250 1500 1750 2000 2250 2500
Rg(ohm)
Rg(ohm)
Figure 19. Input voltage vs input charge Figure 20. Turn-off drain source voltage
slope (part 1)
Vin (V)
dv/dt(V/usec)
9
300
275
8
Vds=1V
Id=1.5A
7
Vin=5V
Vdd=15V
Id=1.5A
250
225
200
6
175
5
150
4
125
100
3
75
2
50
1
25
0
0
0
1
2
3
4
5
6
7
8
9
10
11
Qg (nC)
0
500
250
1000
750
1500
1250
2000
1750
2500
2250
Rg(ohm)
Doc ID 018529 Rev 1
13/21
Electrical specifications
VNS3NV04DP-E
Figure 21. Turn-off drain-source voltage Figure 22. Capacitance variations
slope (part 2)
dv/dt(V/usec)
C(pF)
300
350
275
Vin=3.5V
Vdd=15V
Id=1.5A
250
225
300
f=1MHz
Vin=0V
200
250
175
150
200
125
100
150
75
50
100
25
0
50
0
500
1000
250
750
1500
1250
2000
1750
2500
0
2250
5
10
15
20
25
30
35
Vds(V)
Rg(ohm)
Figure 23. Switching time resistive load Figure 24. Switching time resistive load
(part 1)
(part 1)
t(usec)
t(nsec)
4
900
3.5
3
800
td(off)
Vdd=15V
Id=1.5A
Vin=5V
tr
Vdd=15V
Id=1.5A
Rg=220ohm
700
tr
600
2.5
500
2
tf
400
td(off)
1.5
300
1
tf
200
td(on)
0.5
td(on)
100
0
0
0
500
250
1000
750
1500
1250
2000
1750
2500
3.25
2250
3.5
3.75
4
4.25
4.5
4.75
5
5.25
Vin(V)
Rg(ohm)
Figure 25. Output characteristics
Figure 26. Normalized on resistance vs
temperature
Id (A)
Rds(on) (mOhm)
5
4
Vin=5V
4.5
Vin=4V
3.5
4
3.5
Vin=5V
Id=1.5A
3
Vin=3V
3
2.5
2.5
2
2
1.5
1.5
1
1
0.5
0.5
0
0
1
2
3
4
5
6
7
8
9
10
14/21
-50
-25
0
25
50
75
Tc )ºC)
Vds (V)
Doc ID 018529 Rev 1
100
125
150
175
VNS3NV04DP-E
Electrical specifications
Figure 27. Normalized input threshold
voltage vs temperature
Figure 28. Normalized current limit vs
junction temperature
Vinth (V)
Ilim (A)
10
2
1.8
9
Vds=Vin
Id=1mA
1.6
1.4
7
1.2
6
1
5
0.8
4
0.6
3
0.4
2
0.2
1
0
0
-50
-25
0
Vin=5V
Vds=13V
8
25
50
75
100
125
150
175
Tc (ºC)
-50
-25
0
25
50
75
100
125
150
175
Tc (ºC)
Figure 29. Step response current limit
Tdlim(usec)
13
12.5
Vin=5V
Rg=220ohm
12
11.5
11
10.5
10
9.5
9
8.5
8
7.5
5
7.5
10 12.5 15 17.5 20 22.5 25 27.5 30 32.5
Vdd(V)
Doc ID 018529 Rev 1
15/21
Protection features
3
VNS3NV04DP-E
Protection features
During normal operation, the INPUT pin is electrically connected to the gate of the internal
power MOSFET through a low impedance path.
The device then behaves like a standard power MOSFET and can be used as a switch from
DC up to 50 KHz. The only difference from the user’s standpoint is that a small DC current
IISS (typ. 100 µA) flows into the INPUT pin in order to supply the internal circuitry.
The following sections describe the device features.
3.1
Overvoltage clamp protection
Internally set at 45 V, along with the rugged avalanche characteristics of the Power
MOSFET stage give this device unrivalled ruggedness and energy handling capability. This
feature is mainly important when driving inductive loads.
3.2
Linear current limiter circuit
Limits the drain current ID to Ilim whatever the INPUT pin voltages. When the current limiter
is active, the device operates in the linear region, so power dissipation may exceed the
capability of the heatsink. Both case and junction temperatures increase, and if this phase
lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.
3.3
Overtemperature and short circuit protection
These are based on sensing the chip temperature and are not dependent on the input
voltage. The location of the sensing element on the chip in the power stage area ensures
fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the
range 150 to 190 °C, a typical value being 170 °C. The device is automatically restarted
when the chip temperature falls of about 15 °C below shutdown temperature.
3.4
Status feedback
In the case of an overtemperature fault condition (Tj > Tjsh), the device tries to sink a
diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from
a low impedance source, this current may be used in order to warn the control circuit of a
device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not
able to supply the current Igf, the INPUT pin falls to 0 V. This however not affects the device
operation: no requirement is put on the current capability of the INPUT pin driver except to
be able to supply the normal operation drive current IISS.
Additional features of this device are ESD protection according to the Human Body model
and the ability to be driven from a TTL Logic circuit.
16/21
Doc ID 018529 Rev 1
VNS3NV04DP-E
Package and packing information
4
Package and packing information
4.1
ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.2
SO-8 mechanical data
Table 10.
SO-8 mechanical data
mm
Dim.
Min.
Typ.
A
Max.
1.75
A1
0.10
A2
1.25
b
0.28
0.48
c
0.17
0.23
D(1)
4.80
4.90
5.00
E
5.80
6.00
6.20
E1(2)
3.80
3.90
4.00
e
0.25
1.27
h
0.25
0.50
L
0.40
1.27
L1
k
1.04
0°
ccc
8°
0.10
1. Dimension “D” does not include mold Flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs
shall not exceed 0.15 mm in total (both side).
2. Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not
exceed 0.25 mm per side.
Doc ID 018529 Rev 1
17/21
Package and packing information
VNS3NV04DP-E
Figure 30. SO-8 package dimension
0016023 D
18/21
Doc ID 018529 Rev 1
VNS3NV04DP-E
4.3
Package and packing information
SO-8 packing information
Figure 31. SO-8 tube shipment (no suffix)
B
Base Q.ty
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
C
A
100
2000
532
3.2
6
0.6
All dimensions are in mm.
Figure 32. Tape and reel shipment (suffix “TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
2500
2500
330
1.5
13
20.2
12.4
60
18.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (± 0.1)
P
D (± 0.1/-0)
D1 (min)
F (± 0.05)
K (max)
P1 (± 0.1)
All dimensions are in mm.
12
4
8
1.5
1.5
5.5
4.5
2
End
Start
Top
cover
tape
No components
Components
No components
500mm min
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
Doc ID 018529 Rev 1
19/21
Revision history
5
VNS3NV04DP-E
Revision history
Table 11.
20/21
Document revision history
Date
Revision
09-Mar-2011
1
Changes
Initial release.
Doc ID 018529 Rev 1
VNS3NV04DP-E
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2011 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
Doc ID 018529 Rev 1
21/21