VND7N04/VND7N04-1 VNP7N04FI/K7N04FM ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET T YPE VND7N04 VND7N04-1 VNP7N04F I VNK7N04F M V c lamp 42 42 42 42 V V V V R DS(on) 0.14 0.14 0.14 0.14 Ω Ω Ω Ω I l im 7 7 7 7 A A A A 3 ■ ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VND7N04, VND7N04-1, VNP7N04FI and VNK7N04FM are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh BLOCK DIAGRAM February 2000 3 2 1 1 IPAK TO-251 DPAK TO-252 3 1 ISOWATT220 2 SOT82-FM enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. 1/14 VND7N04/VND7N04-1/VNP7N04FI/VNK7N04FM ABSOLUTE MAXIMUM RATING Symbol Parameter Value DPAK IP AK V DS Drain-source Voltage (V in = 0) V in Unit ISOW AT T220 SOT -82FM Internally Clamped V Input Voltage 18 V ID Drain Current Internally Limited A IR Reverse DC O utput Current -7 A 2000 V V esd Electrostatic Discharge (C= 100 pF, R=1.5 KΩ) P tot Total Dissipation at T c = 25 C Tj Tc T stg o 60 Operating Junction T emperature Case O perating T emperature Storage Temperature 24 9 W Internally Limited o C Internally Limited o C -55 to 150 o C THERMAL DATA DPAK/IPAK ISOW AT T220 SO T82-FM R t hj-ca se Thermal Resistance Junction-case Max 3.75 5.2 14 o C/W R t hj-a mb Thermal Resistance Junction-ambient Max 100 62.5 100 o C/W ELECTRICAL CHARACTERISTICS (-40 < Tj < 125 oC unless otherwise specified) OFF Symb ol Parameter Test Cond ition s V CLAMP Drain-source Clamp Voltage I D = 200 mA V CL TH Drain-source Clamp Threshold Voltage I D = 2 mA V I NCL Input-Source Reverse Clamp Voltage I in = -1 mA I DSS Zero Input Voltage Drain Current (V in = 0) V DS = 13 V V DS = 25 V V in = 0 V in = 0 I I SS Supply Current from Input Pin V DS = 0 V Vin = 10 V V in = 0 V in = 0 Min. Typ . Max. Un it 32 42 52 V 31 V -1.1 -0.25 V 75 200 µA µA 250 550 µA Typ . Max. Un it 3 V A A 0.14 0.28 Ω Ω A A 0.28 0.56 Ω Ω ON (∗) Symb ol Parameter Test Cond ition s Min. ID + Ii n = 1 mA 0.8 V IN(th) Input Threshold Voltage V DS = Vin R DS( on) Static Drain-source On Resistance V i n = 10 V I D = 3.5 ID = 3.5 Vi n = 5 V -40 < T j < 25 oC V i n = 10 V I D = 3.5 ID = 3.5 Vi n = 5 V o T j = 125 C 2/14 VND7N04/VND7N04-1/VNP7N04FI/VNK7N04FM ELECTRICAL CHARACTERISTICS (continued) DYNAMIC Symb ol g fs (∗) C oss Parameter Test Cond ition s Forward Transconductance V DS = 13 V I D = 3.5 A Output Capacitance V DS = 13 V f = 1 MHz Min. Typ . 2 5 Vin = 0 Max. Un it S 250 500 pF Typ . Max. Un it SWITCHING (**) Symb ol Parameter Test Cond ition s Min. t d(on) tr t d(of f) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall T ime V DD = 15 V V gen = 10 V (see figure 3) Id = 3.5 A R gen = 10 Ω 50 60 130 50 150 180 300 200 ns ns ns ns t d(on) tr t d(of f) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall T ime V DD = 15 V V gen = 10 V (see figure 3) Id = 3.5 A R gen = 1000 Ω 140 0.4 2.5 1 500 1.1 7 4 ns µs µs µs Turn-on Current Slope V DD = 15 V V i n = 10 V Total Input Charge V DD = 12 V (di/dt) on Qi ID = 3.5 A R gen = 10 Ω ID = 3.5 A V i n = 10 V 50 A/µs 18 nC SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s V SD (∗) Forward O n Voltage I SD = 3.5 A t r r (∗∗) Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 3.5 A di/dt = 100 A/µs Tj = 25 oC V DD = 30 V (see test circuit, figure 5) Q r r (∗∗) I RRM (∗∗) Min. Typ . V in = 0 Max. Un it 1.7 V 40 ns 0.2 µC 3.6 A PROTECTION Symb ol I lim Parameter Test Cond ition s Min. Typ . Max. Un it VDS = 13 V V DS = 13 V 4 4 7 7 11 11 A A 13 15 20 25 µs µs Drain Current Limit V i n = 10 V Vi n = 5 V t dl im (∗∗) Step Response Current Limit V i n = 10 V Vi n = 5 V T jsh (∗∗) Overtemperature Shutdown 150 o C T j rs (∗∗) Overtemperature Reset 135 o C I gf (∗∗) Fault Sink Current V i n = 10 V Vi n = 5 V E as (∗∗) Single Pulse Avalanche Energy starting T j = 25 C V DD = 20 V V i n = 10 V R gen = 1 KΩ L = 30 mH 50 20 VDS = 13 V V DS = 13 V o 0.4 mA mA J (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (∗∗) Parameters guaranteed by design/characterization 3/14 VND7N04/VND7N04-1/VNP7N04FI/VNK7N04FM PROTECTION FEATURES During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user’s standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh. 4/14 - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135oC. - STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 Ω. The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)). VND7N04/VND7N04-1/VNP7N04FI/VNK7N04FM Thermal Impedance For DPAK / IPAK Thermal Impedance For ISOWATT220 Derating Curve Output Characteristics Transconductance Static Drain-Source On Resistance vs Input Voltage 5/14 VND7N04/VND7N04-1/VNP7N04FI/VNK7N04FM Static Drain-Source On Resistance Static Drain-Source On Resistance Input Charge vs Input Voltage Capacitance Variations Normalized Input Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 6/14 VND7N04/VND7N04-1/VNP7N04FI/VNK7N04FM Normalized On Resistance vs Temperature Turn-on Current Slope Turn-on Current Slope Turn-off Drain-Source Voltage Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load 7/14 VND7N04/VND7N04-1/VNP7N04FI/VNK7N04FM Switching Time Resistive Load Switching Time Resistive Load Current Limit vs Junction Temperature Step Response Current Limit Source Drain Diode Forward Characteristics 8/14 VND7N04/VND7N04-1/VNP7N04FI/VNK7N04FM Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Input Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 6: Waveforms 9/14 VND7N04/VND7N04-1/VNP7N04FI/VNK7N04FM TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 10/14 VND7N04/VND7N04-1/VNP7N04FI/VNK7N04FM TO-251 (IPAK) MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A3 0.70 1.30 0.028 0.051 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 B3 0.85 B5 B6 C 0.033 0.30 0.012 0.95 0.45 0.60 0.037 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.237 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 15.90 16.30 0.626 0.642 L 9.00 9.40 0.354 0.370 L1 0.80 1.20 0.031 L2 V1 0.80 10 o 1.00 0.047 0.031 10 0.039 o P032N_E 11/14 VND7N04/VND7N04-1/VNP7N04FI/VNK7N04FM ISOWATT220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L2 12/14 L4 P011G VND7N04/VND7N04-1/VNP7N04FI/VNK7N04FM SOT-82FM MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.85 3.05 1.122 1.200 A1 1.47 1.67 0.578 0.657 b 0.40 0.60 0.157 0.236 b1 1.4 1.6 0.551 0.630 b2 1.3 1.5 0.511 0.590 c 0.45 0.6 0.177 0.236 D 10.5 10.9 4.133 4.291 e 2.2 2.8 0.866 1.102 E 7.45 7.75 2.933 3.051 L 15.5 15.9 6.102 6.260 L1 1.95 2.35 0.767 0.925 P032R 13/14 VND7N04/VND7N04-1/VNP7N04FI/VNK7N04FM Information furnished is believed to be accurate and reliable. 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