ZETEX ZXMP3A17E6

ZXMP3A17E6
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -30V; RDS(ON) = 0.07
ID = -4.0A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SOT23-6
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23-6 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP3A17E6TA
7”
8mm
3000 units
ZXMP3A17E6TC
13”
8mm
10000 units
DEVICE MARKING
Top View
• 317
PROVISIONAL ISSUE C - AUGUST 2002
1
ZXMP3A17E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
Gate Source Voltage
V GS
Continuous Drain Current V GS =10V; T A =25°C (b)
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
LIMIT
UNIT
-30
V
20
V
ID
-4.0
-3.2
-3.2
A
Pulsed Drain Current (c)
I DM
-14.4
A
Continuous Source Current (Body Diode) (b)
IS
-2.5
A
Pulsed Source Current (Body Diode) (c)
I SM
-14.4
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
1.1
8.8
W
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
1.7
13.6
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
113
°C/W
Junction to Ambient (b)
R θJA
73
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10␮s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
PROVISIONAL ISSUE C - AUGUST 2002
2
ZXMP3A17E6
CHARACTERISTICS
1.2
-ID Drain Current (A)
1
Max Power Dissipation (W)
RDS(ON)
Limited
10
DC
1s
100ms
100m
10ms
1ms
100us
10m
Single Pulse, Tamb=25°C
0.1
1
10
1.0
0.8
0.6
0.4
0.2
0.0
0
25
-VDS Drain-Source Voltage (V)
100
80
D=0.5
60
Single Pulse
D=0.2
D=0.05
20
D=0.1
0
100µ 1m
10m 100m
1
10
100
75
100
125
150
Derating Curve
MaximumPower (W)
Thermal Resistance (°C/W)
P-channel Safe Operating Area
40
50
Temperature (°C)
1k
10
1
100µ
Pulse Width (s)
Single Pulse
Tamb=25°C
100
1m
10m 100m
1
10
100
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
PROVISIONAL ISSUE C - AUGUST 2002
3
1k
ZXMP3A17E6
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
V (BR)DSS
-30
TYP.
MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
Zero Gate Voltage Drain Current
I DSS
-0.5
␮A
Gate-Body Leakage
I GSS
100
nA
Gate-Source Threshold Voltage
V GS(th)
-0.8
V
Static Drain-Source On-State Resistance R DS(on)
(1)
0.070
0.110
V GS =⫾20V, V DS =0V
⍀
⍀
I =-250␮A, V DS = V GS
D
V GS =-10V, I D =-3.2A
V GS =-4.5V, I D =-2.5A
V DS =-15V,I D =-3.2A
g fs
6.4
S
Input Capacitance
C iss
630
pF
Output Capacitance
C oss
113
pF
Reverse Transfer Capacitance
C rss
78
pF
Forward Transconductance (1)(3)
I D =-250␮A, V GS =0V
V DS =-30V, V GS =0V
DYNAMIC (3)
V DS =-15V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
Turn-On Delay Time
t d(on)
1.74
ns
Rise Time
tr
2.87
ns
Turn-Off Delay Time
t d(off)
29.2
ns
Fall Time
tf
8.72
ns
Gate Charge
Qg
8.28
nC
Total Gate Charge
Qg
15.8
nC
Gate-Source Charge
Q gs
1.84
nC
Gate-Drain Charge
Q gd
2.8
nC
Diode Forward Voltage (1)
V SD
-0.85
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
V DD =-15V, I D =-1A
R G =6.0⍀, V GS =-10V
V DS =-15V,V GS =-5V,
I D =-3.2A
V DS =-15V,V GS =-10V,
I D =-3.2A
SOURCE-DRAIN DIODE
-1.2
V
T J =25°C, I S =-2.5A,
V GS =0V
19.5
ns
16.3
nC
T J =25°C, I F =-1.7A,
di/dt= 100A/µs
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE C - AUGUST 2002
4
ZXMP3A17E6
TYPICAL CHARACTERISTICS
10V
4V
-ID Drain Current (A)
3.5V
3V
2.5V
1
-VGS
2V
0.1
0.01
0.1
10V
T = 150°C
5V
-ID Drain Current (A)
T = 25°C
10
1
4V
3.5V
3V
2.5V
1
2V
-VGS
0.1
1.5V
0.01
10
5V
10
0.1
-VDS Drain-Source Voltage (V)
1
10
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.4
Normalised RDS(on) and VGS(th)
-ID Drain Current (A)
10
T = 150°C
1
T = 25°C
-VDS = 10V
0.1
1
2
3
VGS = -10V
ID = -3.2A
1.2
RDS(on)
1.0
VGS(th)
0.8
VGS = VDS
ID = -250uA
0.6
-50
4
-VGS Gate-Source Voltage (V)
T = 25°C
-VGS
10
2.5V
3V
3.5V
1
4V
5V
10V
0.1
0.1
1
50
100
150
Normalised Curves v Temperature
-ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (Ω)
Typical Transfer Characteristics
2V
0
Tj Junction Temperature (°C)
10
T = 150°C
1
0.01
0.2
10
-ID Drain Current (A)
On-Resistance v Drain Current
T = 25°C
0.1
0.4
0.6
0.8
1.0
-VSD Source-Drain Voltage (V)
1.2
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE C - AUGUST 2002
5
ZXMP3A17E6
TYPICAL CHARACTERISTICS
10
VGS = 0V
f = 1MHz
800
600
-VGS Gate-Source Voltage (V)
C Capacitance (pF)
1000
CISS
COSS
400
CRSS
200
0
0.1
1
10
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
ID = -3.2A
8
6
4
2
VDS = -15V
0
0
5
10
15
20
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
PROVISIONAL ISSUE C - AUGUST 2002
6
ZXMP3A17E6
PACKAGE OUTLINE
PAD LAYOUT DETAILS
e
b
L 2
E1
E
DATUM A
a
e1
D
C
A
A2
A1
CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES.
PACKAGE DIMENSIONS
Millimetres
Inches
Millimetres
DIM
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
0.90
1.45
0.35
0.057
E
2.60
3.00
0.102
0.118
A1
0.00
0.15
0
0.006
E1
1.50
1.75
0.059
0.069
A2
0.90
1.30
0.035
0.051
L
0.10
0.60
0.004
0.002
b
0.35
0.50
0.014
0.019
e
0.95 REF
0.037 REF
C
0.09
0.20
0.0035
0.008
e1
1.90 REF
0.074 REF
D
2.80
3.00
0.110
0.118
L
0°
10°
0°
10°
© Zetex plc 2002
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[email protected]
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Telephone (44) 161 622 4422
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[email protected]
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For the latest product information, log on to
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PROVISIONAL ISSUE C - AUGUST 2002
7