2SK3446 Silicon N Channel Power MOS FET Power Switching ADE-208-1566E (Z) 6th. Edition Nov. 2002 Features • • • • Capable of 2.5 V gate drive Low drive current Low on-resistance RDS(on)=1.5 Ω typ. (at VGS = 4 V) Outline TO-92MOD. D G 3 S 2 1 1. Source 2. Drain 3. Gate 2SK3446 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 150 V Gate to source voltage VGSS ±10 V Drain current ID 1 A Drain peak current ID(pulse)Note1 4 A Body-drain diode reverse drain current IDR 1 A Channel dissipation Pch Note2 0.9 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C Rev.5, Nov. 2002, page 2 of 5 2SK3446 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS Typ Max Unit Test Conditions 150 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±10 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±8 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 150 V, VGS = 0 Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V VDS = 10 V, I D = 1 mA Static drain to source on state RDS(on) — 1.5 1.95 Ω ID = 0.5 A, VGS = 4 V resistance RDS(on) — 1.9 2.5 Ω ID = 0.5 A, VGS = 2.5 V Note3 Forward transfer admittance |yfs| 0.8 1.4 — S ID = 0.5 A, VDS = 10 V Note3 Input capacitance Ciss — 98 — pF VDS = 10 V Output capacitance Coss — 31 — pF VGS = 0 Reverse transfer capacitance Crss — 14 — pF f = 1 MHz Total gate charge Qg — 3.5 — nC VDD = 100 V Gate to source charge Qgs — 0.5 — nC VGS = 4 V Gate to drain charge Qgd — 1.8 — nC ID = 1 A Turn-on delay time td(on) — 8 — ns VGS = 4 V, ID = 0.5 A Rise time tr — 12 — ns RL = 60 Ω Turn-off delay time td(off) — 34 — ns Fall time tf — 19 — ns Body–drain diode forward voltage VDF — 1.0 1.5 V IF = 1 A, VGS = 0 Note3 — 60 — ns IF = 1 A, VGS = 0 diF/ dt =100 A/µs Body–drain diode reverse recovery trr time Note3 Notes: 3. Pulse test Rev.5, Nov. 2002, page 3 of 5 2SK3446 Package Dimensions As of July, 2002 Unit: mm 4.8 ± 0.4 2.3 Max 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.55 Max 10.1 Min 8.0 ± 0.5 3.8 ± 0.4 0.5 Max 1.27 2.54 Hitachi Code JEDEC JEITA Mass (reference value) Rev.5, Nov. 2002, page 4 of 5 TO-92 Mod — Conforms 0.35 g 2SK3446 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://semiconductor.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 7.0 Rev.5, Nov. 2002, page 5 of 5