ETC 2SK3446

2SK3446
Silicon N Channel Power MOS FET
Power Switching
ADE-208-1566E (Z)
6th. Edition
Nov. 2002
Features
•
•
•
•
Capable of 2.5 V gate drive
Low drive current
Low on-resistance
RDS(on)=1.5 Ω typ. (at VGS = 4 V)
Outline
TO-92MOD.
D
G
3
S
2
1
1. Source
2. Drain
3. Gate
2SK3446
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
150
V
Gate to source voltage
VGSS
±10
V
Drain current
ID
1
A
Drain peak current
ID(pulse)Note1
4
A
Body-drain diode reverse drain current
IDR
1
A
Channel dissipation
Pch Note2
0.9
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
Rev.5, Nov. 2002, page 2 of 5
2SK3446
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Typ
Max
Unit
Test Conditions
150
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS ±10
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±8 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
1
µA
VDS = 150 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
0.5
—
1.5
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—
1.5
1.95
Ω
ID = 0.5 A, VGS = 4 V
resistance
RDS(on)
—
1.9
2.5
Ω
ID = 0.5 A, VGS = 2.5 V Note3
Forward transfer admittance
|yfs|
0.8
1.4
—
S
ID = 0.5 A, VDS = 10 V Note3
Input capacitance
Ciss
—
98
—
pF
VDS = 10 V
Output capacitance
Coss
—
31
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
14
—
pF
f = 1 MHz
Total gate charge
Qg
—
3.5
—
nC
VDD = 100 V
Gate to source charge
Qgs
—
0.5
—
nC
VGS = 4 V
Gate to drain charge
Qgd
—
1.8
—
nC
ID = 1 A
Turn-on delay time
td(on)
—
8
—
ns
VGS = 4 V, ID = 0.5 A
Rise time
tr
—
12
—
ns
RL = 60 Ω
Turn-off delay time
td(off)
—
34
—
ns
Fall time
tf
—
19
—
ns
Body–drain diode forward voltage
VDF
—
1.0
1.5
V
IF = 1 A, VGS = 0 Note3
—
60
—
ns
IF = 1 A, VGS = 0
diF/ dt =100 A/µs
Body–drain diode reverse recovery trr
time
Note3
Notes: 3. Pulse test
Rev.5, Nov. 2002, page 3 of 5
2SK3446
Package Dimensions
As of July, 2002
Unit: mm
4.8 ± 0.4
2.3 Max
0.65 ± 0.1
0.75 Max
0.7
0.60 Max
0.55 Max
10.1 Min
8.0 ± 0.5
3.8 ± 0.4
0.5 Max
1.27
2.54
Hitachi Code
JEDEC
JEITA
Mass (reference value)
Rev.5, Nov. 2002, page 4 of 5
TO-92 Mod
—
Conforms
0.35 g
2SK3446
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 7.0
Rev.5, Nov. 2002, page 5 of 5