ETC 5962-8755001XA

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
B
Changes IAW NOR 5962-R096-98. - lgt
98-04-24
Monica L. Poelking
C
Add vendor CAGE F8859. Add device Class V criteria. Add delta limits, table III.
Add case outline X. Update the latest MIL-PRF-38535 requirements. - ltg
01-02-06
Raymond Monnin
D
Add case outline Z. - jak
01-07-23
Thomas M. Hess
The first page of this drawing has been changed.
Current CAGE CODE is 67268
REV
SHEET
REV
D
D
D
D
D
SHEET
14
15
16
17
18
REV STATUS
OF SHEETS
PMIC N/A
REV
D
C
D
C
C
C
C
C
C
C
D
C
C
C
SHEET
1
2
3
4
5
6
7
8
9
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PREPARED BY
DEFENSE SUPPLY CENTER COLUMBUS
Greg A. Pitz
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
COLUMBUS, OHIO 43216
http://www.dscc.dla.mil
CHECKED BY
Daniel A. DiCenzo
APPROVED BY
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL
BUFFER/LINE DRIVER WITH 3-STATE OUTPUTS,
MONOLITHIC SILICON
D. R. Cool
DRAWING APPROVAL DATE
87-05-15
REVISION LEVEL
D
SIZE
CAGE CODE
A
14933
5962-87550
SHEET
1
DSCC FORM 2233
APR 97
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
OF
18
5962-E499-01
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)
and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
1.2 PIN. The PIN is as shown in the following examples.
For device classes M and Q:
5962
-
Federal
stock class
designator
\
87550
01
RHA
designator
(see 1.2.1)
R
Device
type
(see 1.2.2)
X
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
For device class V:
5962
-
Federal
stock class
designator
\
87550
V
01
RHA
designator
(see 1.2.1)
Device
type
(see 1.2.2)
/
X
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
X
Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
54AC240
02
54AC11240
Circuit function
Octal buffer/line driver with 3-state
inverted outputs
Octal buffer/line driver with 3-state
inverted outputs
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed
below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q
designators will not be included in the PIN and will not be marked on the device.
Device class
M
Q or V
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN
class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Certification and qualification to MIL-PRF-38535
STANDARD
MICROCIRCUIT DRAWING
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DSCC FORM 2234
APR 97
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REVISION LEVEL
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1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
J
K
R
S
X
Z
2
3
Descriptive designator
GDIP1-T24 or CDIP2-T24
GDFP2-F24 or CDFP3-F24
GDIP1-T20 or CDIP2-T20
GDFP2-F20 or CDFP3-F20
See figure 1
GDFP1-G20
CQCC1-N20
CQCC1-N28
Terminals
Package style
24
24
20
20
20
20
20
28
Dual-in-line
Flat pack
Dual-in-line
Flat pack
Flat pack
Flat pack
Square leadless chip carrier
Square leadless chip carrier
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
1.3 Absolute maximum ratings. 1/ 2/ 3/
Supply voltage range (VCC).......................................................................................
DC input voltage range (VIN).....................................................................................
DC output voltage range (VOUT)................................................................................
Clamp diode current (IIK, IOK) ....................................................................................
DC output current .....................................................................................................
DC VCC or GND current (per pin) .............................................................................
Storage temperature range (TSTG)............................................................................
Maximum power dissipation (PD).............................................................................
Lead temperature (soldering, 10 seconds) ..............................................................
Thermal resistance, junction-to-case (θJC) ...............................................................
Junction temperature (TJ) ........................................................................................
-0.5 V dc to +7.0 V dc
-0.5 V dc to VCC + 0.5 V dc
-0.5 V dc to VCC + 0.5 V dc
±20 mA
±50 mA
±50 mA
-65°C to +150°C
500 mW
+245°C
See MIL-STD-1835
+175°C 4/
1.4 Recommended operating conditions. 2/ 3/ 5/
Supply voltage range (VCC).......................................................................................
Input voltage range (VIN) ...........................................................................................
Output voltage range (VOUT) .....................................................................................
Case operating temperature range (TC) ...................................................................
Input rise or fall times:
VCC = 3.6 V .........................................................................................................
VCC = 5.5 V .........................................................................................................
+2.0 V dc to +6.0 V dc
+0.0 V dc to VCC
+0.0 V dc to VCC
-55°C to +125°C
0 to 8 ns/V
0 to 8 ns/V
_______
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ Unless otherwise noted, all voltages are referenced to GND.
3/ The limits for the parameters specified herein shall apply over the full specified VCC range and case temperature range of 55°C to +125°C.
4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in
accordance with method 5004 of MIL-STD-883.
5/ Operation from 2.0 V dc to 3.0 V dc is provided for compatibility with data retention and battery back-up systems. Data
retention implies no input transition and no stored data loss with the following conditions: VIH ≥ 70% VCC, VIL ≤ 30% VCC,
VOH ≥ 70% VCC @ -20µA, VOL ≤ 30% VCC @ 20 µA.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-87550
A
REVISION LEVEL
D
SHEET
3
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of
this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue
of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
HANDBOOKS
DEPARTMENT OF DEFENSE
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.
Unless otherwise specified, the issues of the documents which are DOD adopted are those listed in the issue of the DODISS cited
in the solicitation. Unless otherwise specified, the issues of documents not listed in the DODISS are the issues of the documents
cited in the solicitation.
ELECTRONIC INDUSTRIES ALLIANCE (EIA)
JEDEC Standard No. 20 - Standardized for Description of 54/74ACXXXX and 54/74ACTXXXX Advanced High-Speed
CMOS Devices.
(Applications for copies should be addressed to the Electronics Industries Alliance, 2001 Eye Street, NW,
Washington, DC 20006.)
(Non-Government standards and other publications are normally available from the organizations that prepare or distribute the
documents. These documents may also be available in or through libraries or other informational services.)
2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of
this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific
exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device
class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in
MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with figure 1 and 1.2.4 herein.
STANDARD
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REVISION LEVEL
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3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Truth table. The truth table shall be as specified on figure 3.
3.2.4 Logic diagram. The logic diagram shall be as specified on figure 4.
3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 5.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical
performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating
temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests
for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked
as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the
manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator
shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M
shall be in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed
manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing
shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or
for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or
for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein)
involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A.
3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the
option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made available
onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit
group number 37 (see MIL-PRF-38535, appendix A).
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
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REVISION LEVEL
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TABLE I. Electrical performance characteristics.
Test and
MIL-STD-883
test method 1/
Positive input
clamp voltage
3022
Negative input
clamp voltage
3022
High level output
voltage
3006
Symbol
VIC+
For input under test, IIN = 1.0 mA
VIC-
For input under test, IIN = -1.0 mA
VIN = VIH minimum or VIL maximum
IOH = -50 µA
VOH
Device
type
and
Device
class
All
V
Test conditions 2/
-55°C ≤ TC ≤ +125°C
+3.0 V ≤ VCC ≤ +5.5 V
unless otherwise specified
4/
VIN = VIH minimum or VIL maximum
IOH = -12 mA
VIN = VIH minimum or VIL maximum
IOH = -24 mA
Low level output
voltage
3007
VOL
VIN = VIH minimum or VIL maximum
IOH = -50 mA
VIN = VIH minimum or VIL maximum
IOL = 50 µA
4/
VIN = VIH minimum or VIL maximum
IOL = 12 mA
VIN = VIH minimum or VIL maximum
IOL = 24 mA
High level input
voltage
VIH
5/
Low level input
voltage
VIL
5/
Group A
subgroups
Limits 3/
Min
Max
Unit
0.0 V
1
0.4
1.5
V
All
V
Open
1
-0.4
-1.5
V
All
All
All
All
All
All
All
All
3.0 V
1, 2, 3
2.9
All
All
All
All
All
All
All
All
All
All
All
All
All
All
4.5 V
All
All
All
All
All
All
All
All
All
All
All
All
All
All
All
All
All
All
VIN = VIH minimum or VIL maximum
IOL = 50 mA
VCC
4.5 V
4.4
5.5 V
5.4
3.0 V
1
2.56
5.5 V
2, 3
1
2, 3
1
2, 3
1, 2, 3
2.4
3.86
3.7
4.86
4.7
3.85
3.0 V
1, 2, 3
5.5 V
V
0.1
4.5 V
0.1
5.5 V
0.1
3.0 V
1
0.36
5.5 V
2, 3
1
2, 3
1
2, 3
1, 2, 3
0.5
0.36
0.5
0.36
0.5
1.65
3.0 V
1, 2, 3
4.5 V
5.5 V
2.1
4.5 V
3.15
5.5 V
3.85
3.0 V
1, 2, 3
V
V
0.9
4.5 V
1.35
5.5 V
1.65
V
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43216-5000
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APR 97
SIZE
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REVISION LEVEL
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SHEET
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TABLE I. Electrical performance characteristics – Continued.
Test and
MIL-STD-883
test method 1/
Symbol
Device
type
and
Device
class
All
All
Test conditions 2/
-55°C ≤ TC ≤ +125°C
+3.0 V ≤ VCC ≤ +5.5 V
unless otherwise specified
Input leakage
current low
3009
IIL
VIN = 0.0 V
Input leakage
current high
3010
IIH
VIN = 5.5 V
VCC
Group A
subgroups
Limits 3/
Min
Unit
Max
5.5 V
1
-0.1
µA
All
All
5.5 V
2, 3
1
-1.0
0.1
µA
Quiescent supply
current, output
high
3005
ICCH
VIN = VCC or GND
IO = 0 A
All
All
5.5 V
2, 3
1
1.0
4
µA
Quiescent supply
current, output
low
3005
ICCL
VIN = VCC or GND
IO = 0 A
All
All
5.5 V
2, 3
1
80
4
µA
Quiescent supply
current, output
low
3005
ICCZ
VIN = VCC or GND
IO = 0 A
All
All
5.5 V
2, 3
1
80
4
µA
Off-state output
leakage current
high
IOZH
VOUT = 5.5 V, VIN = 5.5 V
All
All
5.5 V
2, 3
1
2, 3
80
0.5
5
Off-state output
leakage current
low
IOZL
VOUT = 0.0 V, VIN = 0.0 V
All
All
5.5 V
1
2, 3
-0.5
-5
µA
Input capacitance
3012
Power dissipation
capacitance
Functional tests
3014
CIN
See 4.4.1c
TC = +25°C
See 4.4.1c
TC = +25°C, f = 1 MHz
See 4.4.1b
VIN = VIH or VIL
Verify output VOUT
All
All
All
All
All
All
5.0 V
4
8.0
pF
5.0 V
4
55.0
pF
3.0 V
7, 8
L
H
5.5 V
7, 8
L
H
CPD
6/
7/
µA
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
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TABLE I. Electrical performance characteristics - continued.
Test and
MIL-STD-883
test method 1/
Propagation delay
time, high to low
low to high,
Symbol
tPHL
8/
mAn to mYn
3003
Test conditions 2/
-55°C ≤ TC ≤ +125°C
+3.0 V ≤ VCC ≤ +5.5 V
unless otherwise specified
TC = +25°C
CL = 50 pF minimum
RL = 500Ω
See figure 5
Device
type
and
Device
class
All
All
tPLH
8/
tPHL
8/
TC = -55°C and +125°C
CL = 50 pF minimum
RL = 500Ω
See figure 5
tPLH
8/
Output enable
time, high to low
low to high,
tPZH
8/
OEn to mYn
3003
TC = +25°C
CL = 50 pF minimum
RL = 500Ω
See figure 5
tPZL
8/
tPZH
8/
TC = -55°C and +125°C
CL = 50 pF minimum
RL = 500Ω
See figure 5
tPZL
8/
Output disable
time, high to low
low to high,
tPHZ
8/
OEn to mYn
3003
TC = +25°C
CL = 50 pF minimum
RL = 500Ω
See figure 5
tPLZ
8/
VCC
Group A
subgroups
3.0 V
9
Limits 3/
Min
Max
1.0
9.0
All
All
All
All
All
All
All
All
4.5 V
1.0
7.0
3.0 V
1.0
9.5
4.5 V
1.0
7.5
1.0
10.5
All
All
All
All
All
All
All
All
4.5 V
1.0
8.0
3.0 V
1.0
11.0
4.5 V
1.0
8.5
1.0
10.5
All
All
All
All
All
All
All
All
4.5 V
1.0
7.5
3.0 V
1.0
11.0
4.5 V
1.0
8.5
1.0
11.5
3.0 V
10, 11
3.0 V
9
3.0 V
10, 11
All
All
All
All
All
All
All
All
4.5 V
1.0
9.0
3.0 V
1.0
13.0
4.5 V
1.0
10.5
1.0
10.0
All
All
All
All
All
All
4.5 V
1.0
9.0
3.0 V
1.0
11.0
4.5 V
1.0
9.0
3.0 V
9
Unit
ns
ns
ns
ns
ns
See footnotes at end of table.
STANDARD
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REVISION LEVEL
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TABLE I. Electrical performance characteristics - Continued.
Test and
MIL-STD-883
test method 1/
Output disable
time, high to low
low to high,
Symbol
tPHZ
8/
OEn to mYn
3003
Test conditions 2/
-55°C ≤ TC ≤ +125°C
+3.0 V ≤ VCC ≤ +5.5 V
unless otherwise specified
TC = -55°C and +125°C
CL = 50 pF minimum
RL = 500Ω
See figure 5
Device
type
and
Device
class
All
All
tPLZ
8/
1/
2/
VCC
Group A
subgroups
3.0 V
10, 11
Limits 3/
Min
Max
1.0
12.5
All
All
All
All
4.5 V
1.0
10.5
3.0 V
1.0
13.5
All
All
4.5 V
1.0
11.0
Unit
ns
For tests not listed in the referenced MIL-STD-883, [e.g. VIH, VIL], utilize the general test procedure under the conditions
listed herein.
Each input/output, as applicable, shall be tested at the specified temperature, for the specified limits, to the tests in table I
herein. Output terminals not designated shall be high level logic, low level logic, or open, except as follows:
a. VIC (pos) tests, the GND terminal can be open. TC = +25°C.
b. VIC (neg) tests, the VCC terminal shall be open. TC = +25°C.
c. All ICC tests, the output terminal shall be open. When performing these tests, the current meter shall be
placed in the circuit such that all current flows through the meter.
3/
4/
5/
6/
7/
8/
Additional detailed information on qualified devices (i.e. pin for pin conditions and testing sequence) is available from the
qualifying activity (DSCC-VQC) upon request.
For negative and positive voltage and current values, the sign designates the potential difference in reference to GND and
the direction of current flow, respectively; and the absolute value of the magnitude, not the sign, is relative to the minimum
and maximum limits, as applicable, listed herein. All devices shall meet or exceed the limits specified in table I, as applicable,
at 3.0 V ≤ VCC ≤ 3.6 V and 4.5 V ≤ VCC ≤ 5.5 V.
The VOH and VOL tests shall be tested at VCC = 3.0 V and 4.5 V. The VOH and VOL tests are guaranteed, if not tested, for
other values of VCC. Limits shown apply to operation at VCC = 3.3 V ±0.3 V and VCC = 5.0 V ±0.5 V. Tests with input current
at +50 mA or -50 mA are performed on only one input at a time with duration not to exceed 10 ms. Transmission driving
tests may be performed using VIN = VCC or GND. When VIN = VCC or GND is used, the test is guaranteed for
VIN = VIH minimum and VIL maximum.
The VIH and VIL tests are not required if applied as forcing functions for VOH and VOL tests.
Power dissipation capacitance (CPD) determines both the power consumption (PD) and dynamic current consumption (IS).
Where:
PD = (CPD + CL) (VCC x VCC)f + (ICC x VCC)
IS = (CPD + CL) VCCf + ICC
f is the frequency of the input signal and CL is the external output load capacitance.
Tests shall be performed in sequence, attributes data only. Functional tests shall include the truth table and other logic
patterns used for fault detection. The test vectors used to verify the truth table shall, at a minimum, test all functions of
each input and output. All possible input to output logic patterns per function shall be guaranteed, if not tested, to the
truth table in figure 2 herein. Functional tests shall be performed in sequence as approved by the qualifying activity on
qualified devices. For VOUT measurements, L ≤ 0.3VCC and H ≥ 0.7VCC.
For propagation delay tests, all paths must be tested. AC limits at VCC = 5.5 V are equal to the limits at VCC = 4.5 V and
guaranteed by testing at VCC = 4.5 V. AC limits at VCC = 3.6 V are equal to limits at VCC = 3.0 V and guaranteed by testing at
VCC = 3.0 V. Minimum ac limits for VCC = 5.5 V are 1.0 ns and guaranteed by guardbanding the VCC = 4.5 V minimum limits
to 1.5 ns.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-87550
A
REVISION LEVEL
C
SHEET
9
Case outline X
Dimensions
Symbol
Inches
Millimeters
Min
Max
Min
Max
A
.045
.085
1.14
2.16
b
.015
.019
0.38
0.48
c
.003
.006
0.076
0.152
D
.505
.515
12.83
13.08
E
.275
.285
6.99
7.24
e
.045
.055
1.14
1.40
L
.250
.370
6.35
9.39
Q
.010
---
0.25
---
N
20
20
FIGURE 1. Case outlines.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-87550
A
REVISION LEVEL
C
SHEET
10
Device type
01
02
Case
outlines
Terminal
number
1
R, S, 2, X, and Z
J and K
3
Terminal symbol
OE1
1A1
2
3
4Y2
2A1
4
5
3Y2
3A1
6
7
2Y2
4A1
8
9
1Y1
NC
2Y1
VCC
3Y1
4A1
4Y4
GND
3A1
2A1
GND
1A1
GND
GND
OE1
NC
1Y2
GND
1Y2
1Y1
10
2Y2
2Y1
11
1A2
3Y2
3Y1
4Y1
2A2
4Y2
4Y1
GND
12
13
OE2
4A2
GND
3A2
NC
2A2
GND
1A2
GND
1Y1
VCC
1Y2
2Y2
20
OE2
VCC
VCC
4A1
3Y2
21
-----
3A1
22
-----
2A1
23
-----
1A1
24
-----
25
-----
OE1
-----
26
-----
-----
2A2
27
-----
-----
1A2
28
-----
-----
VCC
14
3Y1
3A2
15
16
2Y1
4A2
17
18
19
4Y2
NC
OE2
4A2
3A2
NC = No connection
FIGURE 2. Terminal connections.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-87550
A
REVISION LEVEL
D
SHEET
11
Inputs
Outputs
OE1, OE2
A
L
L
H
L
H
L
H
X
Z
H=
L=
X=
Z=
Y
High voltage level
Low voltage level
Irrelevant
High impedance
FIGURE 3. Truth table.
STANDARD
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DSCC FORM 2234
APR 97
SIZE
5962-87550
A
REVISION LEVEL
C
SHEET
12
FIGURE 4. Logic diagram.
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APR 97
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A
REVISION LEVEL
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13
Notes :
1.
When measuring tPLH/tPHL and tPHZ/tPZH : VTEST = open. When measuring tPLZ/tPZL : VTEST = 2 x VCC.
2.
CL = 50 pF or equivalent, (includes probe and jig capacitance).
3.
RL = 500Ω or equivalent.
4.
Input signal from pulse generator: VIN = 0.0 V to VCC; PRR ≤ 1 MHz; ZO = 50Ω; tr ≤ 3.0 ns; tf ≤ 3.0 ns;
tr and tf shall be measured from 10% of VCC to 90% of VCC and from 90% of VCC to 10% of VCC, respectively; duty cycle =
50 percent.
5.
Timing parameters shall be tested at a minimum input frequency of 1MHz.
6.
The outputs are measured one at a time with one transition per measurement.
FIGURE 5. Switching waveforms.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43216-5000
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APR 97
SIZE
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A
REVISION LEVEL
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14
4. QUALITY ASSURANCE PROVISIONS
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MILPRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not
affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance
with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on
all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with
method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test
method 1015.
(2) TA = +125°C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table II herein.
4.2.2 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device
manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MILPRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method
1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table II herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance
with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D,
and E inspections (see 4.4.1 through 4.4.4).
4.3.1 Electrostatic discharge sensitivity qualification inspection. Electrostatic discharge sensitivity (ESDS) testing shall be
performed in accordance with MIL-STD-883, method 3015. ESDS testing shall be measured only for initial qualification and after
process or design changes which may affect ESDS classification.
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for device
class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device
class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1
through 4.4.4).
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-87550
A
REVISION LEVEL
C
SHEET
15
TABLE II. Electrical test requirements.
Test requirements
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
class M
Device
class Q
Device
class V
Interim electrical
parameters (see 4.2)
---
---
1
Final electrical
parameters (see 4.2)
1/ 1, 2, 3, 7,
8, 9
1/ 1, 2, 3, 7,
8, 9
2/, 3/ 1, 2, 3, 7,
8, 9
Group A test
requirements (see 4.4)
1, 2, 3, 4, 7,
8, 9, 10, 11
1, 2, 3, 4, 7,
8, 9, 10, 11
1, 2, 3, 4, 7,
8, 9, 10, 11
Group C end-point electrical
parameters (see 4.4)
1, 2, 3
1, 2, 3
Group D end-point electrical
parameters (see 4.4)
1, 2, 3
1, 2, 3
1, 2, 3
Group E end-point electrical
parameters (see 4.4)
1, 7, 9
1, 7, 9
1, 7, 9
3/ 1, 2, 3, 7,8,
9, 10, 11
1/ PDA applies to subgroup 1.
2/ PDA applies to subgroups 1, 7 and deltas.
3/ Delta limits as specified in table III shall be required where specified, and the delta
limits shall be completed with reference to the zero hour electrical parameters.
TABLE III. Burn-in and operating life test Delta parameters (+25°C).
Parameter
Quiescent current
Input current
low level
Input current
high level
Output voltage
low level
VCC = 5.5 V
IOL = 24 mA
Output voltage
high level
VCC = 5.5 V
IOH = -24 mA
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
Symbol
ICC
Delta Limits
±300 nA
IIL
±20 nA
IIH
±20 nA
VOL
±0.04 V
VOH
±0.2 V
SIZE
5962-87550
A
REVISION LEVEL
C
SHEET
16
4.4.1 Group A inspection.
a. Tests shall be as specified in table II herein.
b.
For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table in figure 2 herein. The test vectors
used to verify the truth table shall, at a minimum, test all functions of each input and output. All possible input to output
logic patterns per function shall be guaranteed, if not tested, to the truth table in figure 2, herein. For device classes Q
and V, subgroups 7 and 8 shall include verifying the functionality of the device.
c.
CIN and CPD shall be measured only for initial qualification and after process or design changes which may affect
capacitance. CIN shall be measured between the designated terminal and GND at a frequency of 1 MHz. CPD shall be
tested in accordance with the latest revision of JEDEC Standard No. 20 and table I herein. For CIN and CPD, test all
applicable pins on five devices with zero failures.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a. Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005
of MIL-STD-883.
b.
TA = +125°C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or
approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test
circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-PRF38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs,
outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness
assured (see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table II herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device
classes must meet the postirradiation end-point electrical parameter limits as defined in table I at
TA = +25°C ±5°C, after exposure, to the subgroups specified in table II herein.
c.
When specified in the purchase order or contract, a copy of the RHA delta limits shall be supplied.
4.5 Methods of inspection. Methods of inspection shall be specified as follows:
4.5.1 Voltage and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GND terminal.
Currents given are conventional current and positive when flowing into the referenced terminal.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q
and V or MIL-PRF-38535, appendix A for device class M.
STANDARD
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APR 97
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REVISION LEVEL
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SHEET
17
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original
equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractorprepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the
individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system application
requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users and this list will
be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC
5962) should contact DSCC-VA, telephone (614) 692-0544.
6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43216-5000, or telephone
(614) 692-0547.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to this
drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103. The
vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to
and accepted by DSCC-VA.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
C
SHEET
18
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 01-07-23
Approved sources of supply for SMD 5962-87550 are listed below for immediate acquisition information only and shall
be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised
to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of
compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next dated revision of
MIL-HDBK-103 and QML-38535.
Vendor
CAGE
number
27014
01295
27014
01295
27014
01295
Vendor
similar
PIN 2/
54AC240LMQB
SNJ54AC240FK
54AC240DMQB
SNJ54AC240J
54AC240FMQB
SNJ54AC240W
5962-8755001XA
F8859
54AC240K02Q
5962-8755001ZA
27014
54AC240WG-QML
5962-8755001VXA
F8859
54AC240K02V
5962-8755001XC
F8859
54AC240K01Q
5962-8755001VXC
F8859
54AC240K01V
5962-87550023A
3/
SNJ54AC11240FK
5962-8755002JA
3/
SNJ54AC11240J
5962-8755002KA
3/
SNJ54AC11240W
Standard
microcircuit drawing
PIN 1/
5962-87550012A
5962-8755001RA
5962-8755001SA
1/
2/
3/
The lead finish shown for each PIN representing a hermetic package is the
most readily available from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor to determine its availability.
Caution. Do not use this number for item acquisition. Items acquired to this
number may not satisfy the performance requirements of this drawing.
Not available from an approved source of supply.
Vendor CAGE
number
Vendor name
and address
27014
National Semiconductor
2900 Semiconductor Drive
P.O. Box 58090
Santa Clara, CA 95052-8090
Point of contact:
5 Foden Road
South Portland, ME 04106
F8859
ST Microelectronics
3 rue de Suisse
BP4199
35041 RENNES cedex2-FRANCE
01295
Texas Instruments, Incorporated
13500 North Central Express way
P.O. Box 655303
Dallas, TX 75265
Point of contact:
6412 Highway 75 South
Sherman, TX 75090-0084
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.