SPECIFICATION Device Name : IGBT Module Type Name : 6MBI100UB-120 Spec. No. : MS5F 5314 Fuji Electric Co.,Ltd. Matsumoto Factory Nov. 08 ’02 S.Yoshiwatari Nov. 08 ’02 T.Miyasaka T.Fujihira K.Yamada MS5F 5314 a b 1 13 H04-004-07 Revised Records Date Classification Nov.-08-’02 enactment Jan.-31-’03 Feb.-14-’03 Revision Revision Ind. Content Applied date Drawn a b Revised Cies,VF, Eon,Err (P4/13,10/13,11/13) Approved T.Miyasaka Issued date Revised characteristics Pc,VCE(sat),VF,toff,tf,Rth(j-c),Rg Added packing, Reliability and Warning Checked K.Yamada Y.Kobayashi T.Miyasaka K.Yamada T.Miyasaka Y.Kobayashi MS5F 5314 K.Yamada T.Fujihira T.Fujihira T.Fujihira a b 2 13 H04-004-06 6MBI100UB-120 1. Outline Drawing ( Unit : mm ) SECTION A-A 2. Equivalent circuit 16,17,18 30,31,32 1 2 5 6 U 27,28,29 3 4 20 9 10 V 24,25,26 7 8 19 W 21,22,23 11 12 33,34,35 13,14,15 MS5F 5314 3 13 a b H04-004-03 3.Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified ） Items Symbols Conditions Maximum Ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Collector current Ic Continuous Icp 1ms Tc=25℃ 150 Tc=80℃ 100 Tc=25℃ 300 Tc=80℃ 200 -Ic 100 -Ic pluse 200 a Collector Power Dissipation Pc Junction temperature Tj 520 150 Storage temperature Tstg -40～ +125 Isolation voltage Screw Torque between terminal and copper base *1 Viso between thermistor and others *2 Mounting 1 device A AC : 1min. - *3 W ℃ 2500 VAC 3.5 N・m (*1) All terminals should be connected together when isolation test will be done. (*2) Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. (*3) Recommendable Value : 2.5~3.5 Nm (M5) 4. Electrical characteristics ( at Tj= 25℃ unless otherwise specified) Items Zero gate voltage Collector current ICES Gate-Emitter leakage current IGES Gate-Emitter threshold voltage Inverter Collector-Emitter saturation voltage Input capacitance Turn-off time Forward on voltage Reverse recovery time Thermistor Lead resistance, terminal-chip * b VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton Turn-on time Characteristics min. typ. max. Units - - 1.0 mA - - 200 nA 4.5 6.5 8.5 V Tj= 25℃ Tj=125℃ Tj= 25℃ - 2.10 2.45 - 2.35 - 1.75 Tj=125℃ VCE=10V,VGE=0V,f=1MHz Vcc = 600V - 2.00 Ic = 100A VGE=±15V - Symbols tr tr (i) toff Conditions VGE = 0V VCE = 1200V VCE = 0V VGE=±20V VCE = 20V Ic = 100mA VGE=15V Ic = 100A a Rg = 5.6Ω tf VF (terminal) VF (chip) ｔｒｒ R lead Resistance R B value B VGE=0V Tj= 25℃ Tj=125℃ IF = 100A Tj= 25℃ Tj=125℃ IF = 100A - a a b 11 0.36 1.20 0.21 0.03 0.60 1.00 0.37 0.07 a 1.95 b 2.05 b 1.60 1.70 - a μs V 2.55 0.35 T =100℃ 465 3.4 5000 495 520 T = 25/50℃ 3305 3375 3450 T = 25℃ nF 0.30 2.90 - b b V 2.1 - μs - mΩ Ω K (*)Biggest internal terminal resistance among arm. MS5F 5314 a b 4 13 H04-004-03 5. Thermal resistance characteristics Items Symbols Conditions min. Characteristics typ. max. Thermal resistance(1device) Rth(j-c) IGBT FWD - - a - - a Contact Thermal resistance Rth(c-f) with Thermal Compound (※) - 0.05 Units 0.24 0.39 - ℃/W ※ This is the value which is defined mounting on the additional cooling fin with thermal compound. 6. Indication on module 6MBI100UB-120 100A 1200V Lot.No. Place of manufacturing (code) 7.Applicable category This specification is applied to IGBT Module named 6MBI100UB-120 . 8.Storage and transportation notes ・ The module should be stored at a standard temperature of 5 to 35℃ and humidity of 45 to 75% . ・ Store modules in a place with few temperature changes in order to avoid condensation on the module surface. ・ Avoid exposure to corrosive gases and dust. ・ Avoid excessive external force on the module. ・ Store modules with unprocessed terminals. ・ Do not drop or otherwise shock the modules when transporting. ～ ～ 9. Definitions of switching time 90% 0V 0V V GE trr Irr VCE Ic 90% 10% 10% ～ ～ 0V 0A V CE Ic 90% Vcc RG ～ ～ L 10% VCE tr(i) V GE Ic tf tr toff ton 10. Packing and Labeling a Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box MS5F 5314 5 a b 13 H04-004-03 11. Reliability test results a Reliability Test Items Test categories Test items Test methods and conditions Mechanical Tests 1 Terminal Strength Pull force (Pull test) Test time 2 Mounting Strength Screw torque Test time : 20N : 10±1 sec. : 2.5 ~ 3.5 N･m (M5) : 10±1 sec. Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 10G Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Shock Maximum acceleratio : 1000G Pulse width : 0.5msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Solderabitlity Solder temp. : 235±5 ℃ Immersion time : 5±1sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Resistance to Solder temp. : 260±5 ℃ Soldering Heat Immersion time : 10±1sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. High Temperature Storage temp. : 125±5 ℃ Storage Test duration : 1000hr. Low Temperature Storage temp. : -40±5 ℃ Storage Test duration : 1000hr. Temperature Storage temp. : 85±3 ℃ Humidity Relative humidity : 85±5% Storage Test duration : 1000hr. Unsaturated Test temp. : 121 ℃ Pressure Cooker Atmospheric pressure : 2.03×105 Pa (Reference value) Test duration : 20hr. +3 Temperature Cycle Test temp. : Low temp. -40 -5 ℃ 3 Vibration A - 121 5 (1:0) 4 A - 122 5 (1:0) A - 131 5 (1:0) A - 132 5 (1:0) B - 111 5 (1:0) B - 112 5 (1:0) B - 121 5 (1:0) B - 123 5 (1:0) B - 131 5 (1:0) B - 141 5 (1:0) 5 6 1 2 3 4 Environment Tests Reference Number Acceptnorms of ance EIAJ sample number ED-4701 A - 111 5 (1:0) Method 1 A - 112 5 (1:0) Method 2 5 +5 High temp. 125 -5 ℃ Number of cycles RT 5 ~ 35 ℃ : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles Test temp. : Dwell time 6 Thermal Shock +0 High temp. 100 -5 ℃ +5 Low temp. 0 -0 ℃ Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles MS5F 5314 6 a b 13 H04-004-03 Reliability Test Items Test categories Test items Test methods and conditions 1 High temperature Reverse Bias Test temp. +0 : Ta = 125 -5 ℃ (Tj ≦ 150 ℃) : VC = 0.8×VCES : Applied DC voltage to C-E VGE = 0V : 1000hr. Endurance Endurance Tests Tests Bias Voltage Bias Method Test duration 2 High temperature Bias Test temp. +0 -5 Test duration : Ta = 125 ℃ (Tj ≦ 150 ℃) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. Test temp. Relative humidity Bias Voltage Bias Method : : : : Test duration ON time OFF time Test temp. : : : : Number of cycles : Bias Voltage Bias Method 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycle) ( for IGBT ) Reference Number Acceptnorms of ance EIAJ sample number ED-4701 D - 313 5 (1:0) 85 +-3oC 85 +-5% VC = 0.8×VCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. ∆ Tj=100±5 deg Tj ≦ 150 ℃, Ta=25±5 ℃ 15000 cycles D - 323 5 (1:0) B - 121 5 (1:0) D - 322 5 (1:0) Failure Criteria Item Characteristic Symbol Electrical Leakage current ICES characteristic ±IGES Gate threshold voltage VGE(th) Saturation voltage VCE(sat) Forward voltage VF Thermal IGBT ∆ VGE resistance or ∆ VCE FW D ∆ VF Isolation voltage Viso Visual Visual inspection inspection Peeling Plating and the others Failure criteria Unit Lower limit Upper limit LSL×0.8 - USL×2 USL×2 USL×1.2 USL×1.2 USL×1.2 USL×1.2 mA µA mA V V mV USL×1.2 Broken insulation mV - The visual sample Note - LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. MS5F 5314 7 a b 13 H04-004-03 Reliability Test Results Endurance Endurance Tests Tests Environment Tests Mechanical Tests Test categorie s Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Reference norms EIAJ ED4701 Number Number of of test failure sample sample A - 111 Method 1 A - 112 Method 2 A - 121 5 0 5 0 5 0 4 Shock A - 122 5 0 5 Solderabitlity A - 131 5 0 6 Resistance to Soldering Heat A - 132 5 0 1 High Temperature Storage B - 111 5 0 2 Low Temperature Storage B - 112 5 0 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker 5 Temperature Cycle B - 121 5 0 B - 123 5 0 B - 131 5 0 6 Thermal Shock B - 141 5 0 1 High temperature Reverse Bias D - 313 5 0 2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias D - 323 5 0 B - 121 5 0 4 Intermitted Operating Life (Power cycling) ( for IGBT ) D - 322 5 0 3 Vibration MS5F 5314 8 a b 13 H04-004-03 Collector current vs. Collector-Emitter voltage Tj= 25℃ / chip Collector current vs. Collector-Emitter voltage Tj= 125℃ / chip 250 250 Collector current : Ic [A] 12V VGE=20V 15V 200 150 10V 100 Collector current : Ic [A] VGE=20 15V 200 12V 150 10V 100 50 50 8V 8V 0 0 0.0 1.0 2.0 3.0 4.0 0.0 5.0 Collector-Emitter voltage : VCE [V] 1.0 2.0 Collector current vs. Collector-Emitter voltage 5.0 Tj=25ﾟC / chip 10 Collector - Emitter voltage : VCE [ V ] 250 Tj=25℃ Tj=125℃ 200 Collector current : Ic [A] 4.0 Collector-Emitter voltage vs. Gate-Emitter voltage VGE=15V (typ.) / chip 150 100 50 8 6 4 Ic=200A Ic=100A Ic= 50A 2 0 0 0.0 1.0 2.0 3.0 4.0 5.0 Capacitance vs. Collector-Emitter voltage (typ.) 15.0 Cies 10.0 Cres Coes 10.0 20.0 Collector-Emitter voltage : VCE [V] 25.0 VGE VCE 0 0.1 0.0 20.0 Dynamic Gate charge (typ.) Vcc=600V， Ic=100A，Tj= 25℃ Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 100.0 1.0 10.0 Gate - Emitter voltage : VGE [ V ] Collector-Emitter voltage : VCE [V] Capacitance : Cies, Coes, Cres [ nF ] 3.0 Collector-Emitter voltage : VCE [V] 30.0 0 200 400 600 Gate charge : Qg [ nC ] MS5F 5314 a b 9 13 H04-004-03 a a Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=5.6Ω, Tj= 25℃ Vcc=600V, VGE=±15V, Rg=5.6Ω, Tj=125℃ 10000 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] Switching time vs. Collector current (typ.) 1000 ton toff tr 100 tf 1000 toff ton tr 100 tf 10 10 0 50 100 150 0 200 Collector current : Ic [ A ] a b Switching time vs. Gate resistance (typ.) 150 200 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=5.6Ω 10000 20.0 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 100 Collector current : Ic [ A ] Vcc=600V, Ic=100A, VGE=±15V, Tj= 25℃ ton toff 1000 tr 100 tf Eoff(125℃) Eon(125℃) 15.0 Eoff(25℃) Eon(25℃) 10.0 Err(125℃) 5.0 Err(25℃) 10 0.0 0.1 1.0 10.0 100.0 1000.0 0 b 50 100 150 200 Collector current : Ic [ A ] Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area +VGE=15V,-VGE≦15V, RG≧5.6Ω ,Tj≦125℃ Vcc=600V, Ic=100A, VGE=±15V, Tj= 125℃ 300 100.0 Eon 75.0 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 50 50.0 25.0 Eoff Err 0.0 0.1 1.0 10.0 Gate resistance : Rg [ Ω ] 100.0 200 100 0 1000.0 0 400 800 1200 Collector - Emitter voltage : VCE [ V ] MS5F 5314 a b 10 13 H04-004-03 b Forward current vs. Forward on voltage (typ.) chip Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=5.6Ω 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 250 Tj=25℃ 200 150 Tj=125 100 50 0 0.00 trr (125℃) trr (25℃) Irr (125℃) Irr (25℃) 100 10 1.00 2.00 3.00 0 4.00 Forward on voltage : VF [ V ] 50 100 150 200 Forward current : IF [ A ] a Temperature characteristic (typ.) Transient thermal resistance 100 1.000 IGBT Resistance : R [ kΩ ] Thermal resistanse : Rth(j-c) [℃/W ] FWD 0.100 0.010 0.001 0.001 10 1 0.1 0.010 0.100 Pulse width : Pw [ sec ] 1.000 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [℃ ] MS5F 5314 a b 11 13 H04-004-03 Warnings - This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. 製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。 絶対最大定格を超えて使用すると、素子が破壊する場合があります。 - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. 万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ 又はブレーカーを必ず付けて２次破壊を防いでください。 - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. 製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。 製品の信頼性寿命を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。 - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. 酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観などの保証は 致しかねます。 - Use this product within the power cycle curve (Technical Rep.No. : MT5F12959) 本製品は、パワーサイクル寿命カーブ以下で使用下さい(技術資料No.: MT5F12959) - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. 主端子及び制御端子に応力を与えて変形させないで下さい。 端子の変形により、接触不良などを引き起こす場合 があります。 - According to the outline drawing, select proper length of screw for main terminal. Longer screws may break the case. 本製品に使用する主端子用のネジの長さは、外形図に従い正しく選定下さい。 ネジが長いとケースが破損する場合があります。 - Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Improper handling may cause isolation breakdown and this may lead to a critical accident. 冷却フィンはネジ取り付け位置間で平坦度を100mmで100um以下、表面の粗さは10um以下にして下さい。 誤った取り扱 いをすると絶縁破壊を起こし、重大事故に発展する場合があります。 - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。 RBSOAの範囲を超えて使用すると素子が破壊する可能性があります。 - If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. 制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。 取り扱い時は静電気対策を実施して下さい。 - b Never add the excessive mechanical stress to the main or control terminals when the product is applied to Equipments. The module structure may be broken. 素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。 端子構造が破壊する可能性があります。 - b In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) 逆バイアスゲート電圧-VGEが不足しますと誤点弧を起こす可能性があります。 誤点弧を起こさない為に-VGEは十分な値で設定して下さい。 （推奨値 : -VGE = -15V) MS5F 5314 12 a b 13 H04-004-03 Cautions - Fuji Electric is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. 富士電機は絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、 誤動作する場合があります。富士電機製半導体製品の故障または誤動作が、結果として人身事故・火災 等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計 など安全確保のための手段を講じて下さい。 - The application examples described in this specification only explain typical ones that used the Fuji Electric products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. 本仕様書に記載してある応用例は、富士電機製品を使用した代表的な応用例を説明するものであり、本仕様書 によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。 - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. 本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを 目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力 制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に 満足することをご確認の上、ご利用下さい。 If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd. MS5F 5314 a b 13 13 H04-004-03