APL502B2 APL502L 500V 58A 0.090W D LINEAR MOSFET B2 G Linear Mosfets are optimized applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). S T-MAX™ TO-264 L • Higher FBSOA • Popular T-MAX™ or TO-264 Package • Higher Power Dissipation MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APL 502 UNIT 500 Volts Drain-Source Voltage 58 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 730 Watts Linear Derating Factor 5.84 W/°C PD TJ,TSTG 232 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 58 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions / Part Number MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 500 Volts ID(ON) On State Drain Current 58 Amps Symbol RDS(ON) IDSS IGSS VGS(TH) 2 (VDS > I D(ON) x R DS(ON) Max, VGS = 8V) Drain-Source On-State Resistance 2 TYP MAX 0.09 (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250 Ohms µA Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage UNIT ±100 nA 4 Volts 2 (VDS = VGS, ID = 2.5mA) SAFE OPERATING AREA CHARACTERISTICS SOA1 Safe Operating Area Test Conditions / Part Number MIN VDS = 400 V, IDS = 1.063A, t = 20 sec., TC = 60°C 425 TYP MAX UNIT Watts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 050-5896 Rev A 5-2002 Symbol Characteristic APL502 DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 7485 9000 Coss Output Capacitance VDS = 25V 1290 1810 Reverse Transfer Capacitance f = 1 MHz 617 930 Turn-on Delay Time VGS = 15V 13 26 Crss td(on) tr Rise Time td(off) Turn-off Delay Time tf Fall Time VDD = 0.5 VDSS 27 54 ID = ID [Cont.] @ 25°C 56 84 RG = 0.6Ω 16 20 TYP MAX UNIT pF ns THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case .17 RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 1.78mH, R = 25Ω, Peak I = 58A j G L 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 0.1 0.2 0.1 0.005 ID, DRAIN CURRENT (AMPERES) 0.05 0.02 0.01 120 PDM Note: 0.01 0.001 10-5 050-5896 Rev A 5-2002 D=0.5 0.05 t2 SINGLE PULSE Peak TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 120 VGS=10V, 15 V VGS=10, 15V 80 8V 60 7.5 V 40 7V 20 10 t1 Duty Factor D = t1/t2 6.5 V 6V ID, DRAIN CURRENT (AMPERES) Z JC, THERMAL IMPEDANCE (°C/W) θ 0.3 80 8V 60 7.5 V 40 7V 20 10 5.5 V 0 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS 6.5 V 6V 5.5 V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3,LOW VOLTAGE OUTPUT CHARACTERISTICS UNIT °C/W VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 60 40 TJ = +125°C 20 TJ = -55°C TJ = +25°C 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 50 40 30 20 10 0 1.30 1.15 V D VGS=10V 1.10 1.00 0.90 0.80 VGS=20V 0.70 0 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 2.5 1.2 I D = 0.5 I D V GS [Cont.] = 10V VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) NORMALIZED TO = 10V @ 0.5 I [Cont.] 1.20 25 2.0 1.5 1.0 0.5 0.0 -50 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 232 -25 30,000 OPERATION HERE LIMITED BY RDS (ON) 100 100µS 10,000 50 1mS 10 10mS 5 TC =+25°C TJ =+150°C SINGLE PULSE 1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) GS Ciss 5,000 Coss 1,000 Crss 500 100mS DC 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 050-5896 Rev A 5-2002 ID, DRAIN CURRENT (AMPERES) 60 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) 80 BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) Typical Preformance Curves APL502 T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 2.87 (.113) 3.12 (.123) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 25.48 (1.003) 26.49 (1.043) 19.81 (.780) 20.32 (.800) 19.81 (.780) 21.39 (.842) Gate Drain 1.01 (.040) 1.40 (.055) 2.29 (.090) 2.69 (.106) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) Gate Drain Source 050-5896 Rev A 5-2002 Source 2.21 (.087) 2.59 (.102) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 5.45 (.215) BSC 2-Plcs. 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) Dimensions in Millimeters and (Inches) 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058