D P-Pack G 500V 43.0A 0.12W APL501P S POWER MOS IV ® HERMETIC PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APL501P UNIT 500 Volts Drain-Source Voltage 43 Continuous Drain Current @ TC = 25°C 1 Amps IDM, lLM Pulsed Drain Current VGS Gate-Source Voltage ±30 Volts Total Power Dissipation @ TC = 25°C 520 Watts Linear Derating Factor 4.16 W/°C PD TJ,TSTG TL 172 and Inductive Current Clamped -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions / Part Number MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 500 Volts ID(ON) On State Drain Current 43 Amps Symbol RDS(ON) IDSS IGSS VGS(TH) 2 (VDS > I D(ON) x R DS(ON) Max, VGS = 8V) Drain-Source On-State Resistance 2 TYP 0.12 (VGS = 10V, 0.5 ID [Cont.]) UNIT Ohms 25 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) µA 250 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage MAX 2 (VDS = VGS, ID = 2.5mA) ±100 nA 4 Volts MAX UNIT THERMAL CHARACTERISTICS Characteristic MIN RQJC Junction to Case RQCS Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) TYP CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 Rev - °C/W 0.06 8-2001 0.24 050-5898 Symbol APL501P DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 6040 7300 Coss Output Capacitance VDS = 25V 1220 1710 Reverse Transfer Capacitance f = 1 MHz 510 770 Turn-on Delay Time VGS = 15V 13 26 Crss td(on) tr Rise Time td(off) tf Turn-off Delay Time Fall Time VDD = 0.5 VDSS 20 40 ID = ID [Cont.] @ 25°C 54 81 RG = 0.6W 11 20 TYP MAX UNIT pF ns SAFE OPERATING AREA CHARACTERISTICS Symbol SOA1 Test Conditions / Part Number MIN VDS = 400 V, IDS = 0.813A, t = 20 sec., TC = 60°C 325 Characteristic Safe Operating Area Watts 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 D=0.5 0.1 0.2 0.1 0.05 0.01 0.005 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) q 0.3 0.05 0.02 0.001 10-5 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 80 80 050-5898 Rev - 8V 60 7V 40 6V 20 5V 0 20 40 60 80 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 8-2001 VGS=9V, 10V, 12V, 14 & 16V 0 t1 0.01 SINGLE PULSE VGS=10, 12, 14 & 16V 9V 8V 60 7V 40 6V 20 5V 0 UNIT 0 4 8 12 16 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS TJ = +25°C 30 TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 20 TJ = +125°C 10 TJ = +25°C TJ = -55°C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 40 30 20 10 GS VGS=10V 1.10 1.00 0.90 0.80 D = 0.5 I D 0 20 40 60 80 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE V GS [Cont.] = 10V 2.0 1.5 1.0 0.5 0.0 -50 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 175 30,000 OPERATION HERE LIMITED BY RDS (ON) 100µS 50 10,000 1mS 10 5 10mS 100mS 1 DC TC =+25°C TJ =+150°C SINGLE PULSE .1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) VGS=20V 1.2 I VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 2.5 .5 D 1.20 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 100 NORMALIZED TO = 10V @ 0.5 I [Cont.] 5,000 Ciss 1,000 Coss 500 Crss 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 8-2001 0 1.15 V Rev - ID, DRAIN CURRENT (AMPERES) 50 1.30 050-5898 ID, DRAIN CURRENT (AMPERES) TJ = -55°C RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 40 BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) APL501P APL501P P-Pack Package Outline 41.53 (1.635) 41.02 (1.615) 35.18 (1.385) 34.67 (1.365) 3.43 (.135) 2.92 (.115) (4-Places) 9.27 (.365) 8.64 (.340) 1.40 (.055) 1.02 (.040) 28.70 (1.130) 28.45 (1.120) Drain Source 3.43 (.135) 2.92 (.115) (4-Places) 4.06 (.160) 3.81 (.150) (5 Places) 51.05 (2.01) 50.55 (1.99) 35.81 (1.41) 35.31 (1.39) 29.34 (1.155) 29.08 (1.145) 8-2001 Rev 050-5898 .635 (.025) .381 (.015) Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 Source Sense 11.63 (.458) 11.13 (.438) 5.33 (.210) 4.83 (.190) 4.39 (.173) 4.14 (.163) (4 Places) 12.45 (.490) 11.94 (.470) Gate 10.92 (.430) 10.67 (.420)