SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature P- TO262 -3-1 • Avalanche rated VDS 40 V RDS(on) max. SMD version 3.4 mΩ ID 80 A P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package Ordering Code Marking SPP80N04S2-04 P- TO220 -3-1 Q67040-S4260 2N0404 SPB80N04S2-04 P- TO263 -3-2 Q67040-S4257 2N0404 SPI80N04S2-04 P- TO262 -3-1 Q67060-S6173 2N0404 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous drain current 1) Value Unit A ID TC=25°C 80 TC=100°C 80 I D puls 320 EAS 810 Repetitive avalanche energy, limited by Tjmax2) EAR 30 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 300 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID=80A, VDD=25V, RGS=25Ω kV/µs IS=80A, VDS=32V, di/dt=200A/µs, Tjmax =175°C TC=25°C Operating and storage temperature T j , T stg 55/175/56 IEC climatic category; DIN IEC 68-1 Page 1 2004-05-24 SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.3 0.5 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 3) - - 40 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)DSS 40 - - VGS(th) 2.1 3 4 Static Characteristics Drain-source breakdown voltage V V GS=0V, I D=1mA Gate threshold voltage, VGS = VDS ID=250µA Zero gate voltage drain current µA I DSS V DS=40V, V GS=0V, Tj=25°C - 0.01 1 V DS=40V, V GS=0V, Tj=125°C2) - 1 100 - 1 100 Gate-source leakage current I GSS nA V GS=20V, VDS=0V Drain-source on-state resistance 4) mΩ RDS(on) V GS=10V, ID=80A - 3 3.7 V GS=10V, ID=80A, SMD version - 2.7 3.4 1Current limited by bondwire ; with an R thJC = 0.5K/W the chip is able to carry I D= 208A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2 2004-05-24 SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 60 125 - Dynamic Characteristics Transconductance gfs V DS≥2*ID*R DS(on)max, S ID=80A Input capacitance Ciss V GS=0V, VDS=25V, - 5250 6980 pF Output capacitance Coss f=1MHz - 1870 2490 Reverse transfer capacitance Crss - 420 630 Turn-on delay time td(on) V DD=20V, V GS=10V, - 16 24 Rise time tr ID=80A, - 45 68 Turn-off delay time td(off) RG=2.2Ω - 50 75 Fall time tf - 40 60 Gate Charge Characteristics Gate to source charge Qgs - 25 35 Gate to drain charge Qgd - 50 75 Gate charge total Qg - 135 170 V(plateau) VDD = 32 V , ID=80A - 5.3 - V IS - - 80 A - - 320 VDD =32V, ID=80A VDD =32V, ID=80A, ns nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, IF=80A - 0.9 1.3 V Reverse recovery time trr VR =20V, IF=lS , - 60 75 ns Reverse recovery charge Qrr diF/dt=100A/µs - 100 125 nC Page 3 2004-05-24 SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (TC) parameter: V GS≥ 6 V parameter: V GS≥ 10 V 320 SPP80N04S2-04 90 A W 70 240 60 200 ID Ptot SPP80N04S2-04 50 160 40 120 30 80 20 40 0 0 10 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( V DS ) ZthJC = f (t p) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 3 SPP80N04S2-04 10 1 SPP80N04S2-04 K/W tp = 59.0µs 10 0 DS /I D A ZthJC R ID 10 2 DS (o n) = V 100 µs 1 ms 10 -1 10 -2 D = 0.50 0.20 10 1 10 0.10 -3 0.05 0.02 10 -4 10 0 -1 10 10 0 10 1 V 10 2 10 -5 -7 10 0.01 single pulse 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp VDS Page 4 2004-05-24 0 SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=25°C RDS(on) = f (ID) parameter: tp = 80 µs parameter: V GS A 13 Ptot = 300W g f VGS [V] a 4.5 160 e ID 140 120 d 100 b 5.0 c 5.3 d 5.5 e 5.7 f 6.0 g 10.0 11 b c d e 10 9 8 7 6 c 80 5 60 f 4 b 40 2 1 a 0.5 1 1.5 2 2.5 3 3.5 4 g 3 20 0 0 SPP80N04S2-04 mΩ RDS(on) 190 SPP80N04S2-04 V 0 0 5 VGS [V] = b 5.0 c 5.3 20 d 5.5 e f 5.7 6.0 g 10.0 40 60 80 100 120 A VDS 8 Typ. forward transconductance ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max g fs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: gfs 320 160 A S 240 120 gfs ID 7 Typ. transfer characteristics 200 100 160 80 120 60 80 40 40 20 0 0 1 2 3 4 5 6 7 160 ID 9 V VGS Page 5 0 0 20 40 60 80 100 120 140 160 A 200 ID 2004-05-24 SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : ID = 80 A, VGS = 10 V parameter: V GS = VDS 11 SPP80N04S2-04 4 mΩ V VGS(th) RDS(on) 9 8 7 1.25 mA 3 250 µA 2.5 6 2 5 98% 1.5 4 typ 3 1 2 0.5 1 0 -60 -20 20 60 100 140 °C 0 -60 200 -20 20 60 °C 100 180 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: V GS=0V, f=1 MHz parameter: Tj , tp = 80 µs 10 5 10 3 pF SPP80N04S2-04 A 10 4 10 2 IF C Ciss Coss 10 3 10 1 Tj = 25 °C typ Crss Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 2 0 5 10 15 20 V 30 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 2004-05-24 SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj) VGS = f (QGate) par.: ID = 80 A, VDD = 25 V, RGS = 25 Ω parameter: ID = 80 A pulsed 850 16 mJ SPP80N04S2-04 V 700 VGS EAS 12 600 500 0,2 VDS max 10 0,8 VDS max 8 400 6 300 200 4 100 2 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 20 40 60 80 100 120 140 160 180nC 210 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 48 SPP80N04S2-04 V V(BR)DSS 46 45 44 43 42 41 40 39 38 37 36 -60 -20 20 60 100 140 °C 200 Tj Page 7 2004-05-24 SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N04S2-04 and BSPB80N04S2-04, for simplicity the device is referred to by the term SPP80N04S2-04 and SPB80N04S2-04 throughout this documentation. Page 8 2004-05-24