Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation GENERAL DESCRIPTION BTA212B series D, E and F QUICK REFERENCE DATA Passivated guaranteed commutation triacs in a plastic envelope suitable for surface mounting intended for use in motor control circuits or with other highly inductive loads. These devices balance the requirements of commutation performance and gate sensitivity. The "sensitive gate" E series and "logic level" D series are intended for interfacing with low power drivers, including micro controllers. PINNING - SOT404 PIN SYMBOL PARAMETER BTA212BBTA212BBTA212BRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current VDRM IT(RMS) ITSM PIN CONFIGURATION MAX. MAX. UNIT 600D 600E 600F 600 800E 800F 800 V 12 95 12 95 A A SYMBOL DESCRIPTION mb 1 main terminal 1 2 main terminal 2 3 gate mb T2 T1 2 main terminal 2 1 G 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(RMS) RMS on-state current ITSM Non-repetitive peak on-state current I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power CONDITIONS MIN. - full sine wave; Tmb ≤ 99 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs over any 20 ms period Storage temperature Operating junction temperature MAX. -600 6001 UNIT -800 800 V - 12 A - 95 105 45 100 A A A2s A/µs - 2 5 5 0.5 A V W W -40 - 150 125 ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. February 2000 Powered by ICminer.com Electronic-Library Service CopyRight 2003 1 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation BTA212B series D, E and F THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient Rth j-a CONDITIONS MIN. TYP. MAX. UNIT - 55 1.5 2.0 - K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. BTA212B2 IGT Gate trigger current IL Latching current IH Holding current VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GVD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GVD = 12 V; IGT = 0.1 A TYP. MAX. UNIT ...D ...D ...E ...F - 1.0 2.2 3.3 5 5 5 10 10 10 25 25 25 mA mA mA - 6 6 9 15 25 25 25 30 30 30 40 40 mA mA mA - 3.8 15 25 30 mA ...D, E, F VT VGT On-state voltage Gate trigger voltage ID Off-state leakage current IT = 17 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C 0.25 1.3 0.7 0.4 1.6 1.5 - V V V - 0.1 0.5 mA MIN. TYP. DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS BTA212B- dVD/dt Critical rate of rise of off-state voltage dIcom/dt Critical rate of change of commutating current dIcom/dt Critical rate of change of commutating current VDM = 67% VDRM(max); Tj = 110 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 110 ˚C; IT(RMS) = 12 A; dVcom/dt = 20V/µs; gate open circuit VDM = 400 V; Tj = 110 ˚C; IT(RMS) = 12 A; dVcom/dt = 0.1V/µs; gate open circuit ...D MAX. UNIT ...E ...F ...D 20 60 70 30 - V/µs 1.8 3.5 5 3 - A/ms 5 16 19 100 - A/ms 2 - µs ...D, E, F tgt Gate controlled turn-on time ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs - - - 2 Device does not trigger in the T2-, G+ quadrant. February 2000 Powered by ICminer.com Electronic-Library Service CopyRight 2003 2 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation 20 BTA212B series D, E and F Tmb(max) / C 95 Ptot / W 15 IT(RMS) / A BT138 = 180 15 120 1 99 C 102.5 90 10 60 10 110 30 5 117.5 5 0 0 5 125 15 10 0 -50 0 50 Tmb / C IT(RMS) / A Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. 1000 100 150 Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. ITSM / A 25 IT(RMS) / A 20 dI T /dt limit 15 100 10 I TSM IT 5 time T Tj initial = 25 C max 10 10us 100us 1ms T/s 10ms 0 0.01 100ms Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. 100 80 1.6 ITSM T 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 99˚C. ITSM / A IT 0.1 1 surge duration / s VGT(Tj) VGT(25 C) 1.4 time Tj initial = 25 C max 1.2 60 1 40 0.8 20 0 0.6 1 10 100 Number of cycles at 50Hz 0.4 -50 1000 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. February 2000 Powered by ICminer.com Electronic-Library Service CopyRight 2003 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation BTA212B series D, E and F IGT(Tj) IGT(25°C) 40 3 IT / A Tj = 125 C Tj = 25 C T2+ G+ T2+ GT2- G- 2.5 typ max 30 Vo = 1.175 V Rs = 0.0316 Ohms 2 20 1.5 1 10 0.5 0 0 -50 0 50 Tj/°C 100 150 0.5 1 1.5 VT / V 2 2.5 3 Fig.10. Typical and maximum on-state characteristic. Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 0 IL(Tj) IL(25 C) 10 2.5 Zth j-mb (K/W) 1 unidirectional bidirectional 2 0.1 1.5 P D 1 tp 0.01 0.5 t 0 -50 0 50 Tj / C 100 0.001 10us 150 1ms 10ms tp / s 0.1s 1s 10s Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms dIcom/dt (A/ms) IH(Tj) IH(25C) 100 F TYPE E TYPE D TYPE 2.5 2 10 1.5 1 0.5 0 -50 1 0 50 Tj / C 100 20 150 Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. February 2000 Powered by ICminer.com Electronic-Library Service CopyRight 2003 40 60 80 Tj/˚C 100 120 140 Fig.12. Minimum, critical rate of change of commutating current dIcom/dt versus junction temperature, dVcom/dt = 20V/µs. 4 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation BTA212B series D, E and F MECHANICAL DATA Dimensions in mm 4.5 max 1.4 max 10.3 max Net Mass: 1.4 g 11 max 15.4 2.5 0.85 max (x2) 0.5 2.54 (x2) Fig.13. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.14. SOT404 : minimum pad sizes for surface mounting. Notes 1. Plastic meets UL94 V0 at 1/8". February 2000 Powered by ICminer.com Electronic-Library Service CopyRight 2003 5 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation BTA212B series D, E and F DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 2000 Powered by ICminer.com Electronic-Library Service CopyRight 2003 6 Rev 1.000