Philips Semiconductors Product specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a full pack, plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. PINNING - SOT186A PIN BTA216X series B QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER MAX. MAX. MAX. UNIT BTA216X- 500B Repetitive peak off-state 500 voltages RMS on-state current 16 Non-repetitive peak on-state 140 current PIN CONFIGURATION 600B 600 800B 800 V 16 140 16 140 A A SYMBOL DESCRIPTION case 1 main terminal 1 2 main terminal 2 3 gate T2 T1 G 1 2 3 case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(RMS) RMS on-state current ITSM Non-repetitive peak on-state current I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power CONDITIONS MIN. - full sine wave; Ths ≤ 38 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs over any 20 ms period Storage temperature Operating junction temperature MAX. -500 5001 -600 6001 UNIT -800 800 V - 16 A - 140 150 98 100 A A A2s A/µs - 2 5 5 0.5 A V W W -40 - 150 125 ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. October 1997 1 Rev 1.200 Philips Semiconductors Product specification Three quadrant triacs high commutation BTA216X series B ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. Visol R.M.S. isolation voltage from all three terminals to external heatsink f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink TYP. - MAX. UNIT 2500 V - 10 - pF MIN. TYP. MAX. UNIT - 55 4.0 5.5 - K/W K/W K/W MIN. TYP. MAX. UNIT T2+ G+ T2+ GT2- G- 2 2 2 18 21 34 50 50 50 mA mA mA T2+ G+ T2+ GT2- G- VD = 12 V; IGT = 0.1 A IT = 20 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C 0.25 - 31 34 30 31 1.2 0.7 0.4 0.1 60 90 60 60 1.5 1.5 0.5 mA mA mA mA V V V mA THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Rth j-a Thermal resistance junction to ambient full or half cycle with heatsink compound without heatsink compound in free air STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS 2 IGT Gate trigger current IL Latching current IH VT VGT Holding current On-state voltage Gate trigger voltage ID Off-state leakage current VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of off-state voltage Critical rate of change of commutating current Gate controlled turn-on time VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 16 A; without snubber; gate open circuit ITM = 20 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs 1000 4000 - V/µs - 28 - A/ms - 2 - µs dIcom/dt tgt 2 Device does not trigger in the T2-, G+ quadrant. October 1997 2 Rev 1.200 Philips Semiconductors Product specification Three quadrant triacs high commutation 25 BTA216X series B BT139 Ptot / W Ths(max) / C 20 25 BT139X IT(RMS) / A = 180 20 38 C 45 120 1 15 90 15 65 60 10 30 10 85 5 105 0 0 5 10 IT(RMS) / A 5 125 20 15 0 -50 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. 1000 50 Ths / C 100 150 Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths. BTA216 ITSM / A 0 50 BT139 IT(RMS) / A 40 dI T /dt limit 30 100 20 I TSM IT T 10 time Tj initial = 25 C max 10 10us 100us 1ms T/s 10ms 0 0.01 100ms Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. 150 ITSM / A 100 1.6 ITSM T 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths ≤ 38˚C. BT139 IT 0.1 1 surge duration / s VGT(Tj) VGT(25 C) BT136 1.4 time Tj initial = 25 C max 1.2 1 50 0.8 0.6 0 1 10 100 Number of cycles at 50Hz 0.4 -50 1000 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. October 1997 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 1.200 Philips Semiconductors Product specification Three quadrant triacs high commutation 3 IGT(Tj) IGT(25 C) BTA216X series B 50 BTA216 T2+ G+ T2+ GT2- G- 2.5 Tj = 125 C Tj = 25 C typ 40 2 BT139 IT / A max Vo = 1.195 V Rs = 0.018 Ohms 30 1.5 20 1 10 0.5 0 0 -50 0 50 Tj / C 100 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 IL(Tj) IL(25 C) 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.10. Typical and maximum on-state characteristic. 10 TRIAC BT139 Zth j-hs (K/W) with heatsink compound without heatsink compound 2.5 1 unidirectional bidirectional 2 0.1 1.5 P D 1 tp 0.01 0.5 t 0 -50 0 50 Tj / C 100 0.001 10us 150 IH(Tj) IH(25C) 1ms 10ms tp / s 0.1s 1s 10s Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms 1000 TRIAC dIcom/dt (A/ms) BTA216 2.5 100 2 1.5 10 1 0.5 0 -50 0 50 Tj / C 100 1 20 150 60 80 Tj / C 100 120 140 Fig.12. Typical, critical rate of change of commutating current dIcom/dt versus junction temperature. Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. October 1997 40 4 Rev 1.200 Philips Semiconductors Product specification Three quadrant triacs high commutation BTA216X series B MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 19 max. max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 3 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 1.3 Fig.13. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1997 5 Rev 1.200 Philips Semiconductors Product specification Three quadrant triacs high commutation BTA216X series B DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1997 6 Rev 1.200