ETC HL6324MG

HL6324MG
AlGaInP Laser Diode
ADE-208-737 (Z)
Preliminary
1st Edition
January 1999
Description
The HL6324MG is a 0.63 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure.
It is suitable as a light sources for laser pointers and optical equipments for amusement.
Application
• Laser pointer
Features
•
•
•
•
•
Visible light output
Optical output power
Low operating current
Low operating voltage
TM mode oscillation
: 635 nm Typ (nearly equal to He-Ne gas laser)
: 3 mW CW
: 30 mA Typ
: 2.7 V Max
Package Type
• HL6324MG: MG
Internal Circuit
1
3
PD
LD
2
HL6324MG
Absolute Maximum Ratings (TC = 25°C)
Item
Symbol
Value
Unit
Optical output power
PO
3
mW
LD reverse voltage
VR(LD)
2
V
PD reverse voltage
VR(PD)
30
V
Operating temperature
Topr
–10 to +50
°C
Storage temperature
Tstg
–40 to +85
°C
Optical and Electrical Characteristics (TC = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Optical output power
PO
3
—
—
mW
Kink free *
Threshold current
Ith
—
25
35
mA
Operating current
I OP
—
30
42
mA
PO = 3 mW
Operating voltage
VOP
—
—
2.7
V
PO = 3 mW
Lasing wavelength
λp
630
635
640
nm
PO = 3 mW
Beam divergence parallel to
the junction
θ//
6
8
10
deg.
PO = 3 mW
Beam divergence
parpendicular to the junction
θ⊥
23
30
39
deg.
PO = 3 mW
Monitor current
IS
0.08
0.15
0.4
mA
PO = 3 mW, VR(PD) = 5 V
Note: Kink free is confirmed at the temperature of 25°C.
2
HL6324MG
Package Dimensions
Unit: mm
0.4 +0.1
−0
φ 5.6 +0
−0.025
1.0 ± 0.1
(90°)
(0.4)
0.25
φ 4.1 ± 0.3
φ 3.55 ± 0.1
Glass
2.3 ± 0.2
φ 1.6 ± 0.2
1.27
6.5 ± 1.0
1.2 ± 0.1
Emitting Point
3 − φ 0.45 ± 0.1
1
1
2
3
3
2
φ 2.0 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
LD/MG


0.3 g
3
HL6324MG
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The
laser beam shall be observed or adjusted through infrared camera or equivalent.
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HL6324MG
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
Japan
:
:
:
:
http://semiconductor.hitachi.com/
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http://www.hitachi.com.sg/grp3/sicd
http://www.hitachi.co.jp/Sicd/index.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic Components Group
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D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Asia Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
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Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
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Taipei Branch Office
3rd Flr, Hung Kuo Building, No.167,
Tun Hwa North Road, Taipei (105)
Taiwan
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 23222 HAS-TP
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7th Flr, North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
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Telex: 40815 HITEC HX
Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 1.0
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