HSB88WA Silicon Schottky Barrier Diode for High Speed Switching ADE-208-965 (Z) Rev.0 Aug. 2000 Features • Low reverse current, Low capacitance. • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HSB88WA C7 CMPAK Pin Arrangement 3 2 (Top View) 1 1 Cathode 2 Cathode 3 Anode HSB88WA Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage VR 10 V Average rectified current IO * 15 mA Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Note: Per one device. Electrical Characteristics (Ta = 25°C) *1 Item Symbol Min Forward voltage VF1 0.350 0.420 V I F = 1 mA VF2 0.500 0.580 I F = 10 mA I R1 0.2 I R2 10 Capacitance C 0.80 pF VR = 0 V, f = 1 MHz Capacitance deviation ∆C 0.10 pF VR = 0 V, f = 1 MHz Forward voltage deviation ∆VF 10 mV I F = 10 mA 30 V C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Reverse current 2 ESD-Capability * Typ Notes: 1. Per one device. 2. Failure criterion ; IR > 0.4 µA at V R = 2 V 2 Max Unit µA Test Condition VR = 2 V VR = 10 V HSB88WA Main Characteristic -5 10-2 10 Reverse current I R (A) Forward current I F (A) -3 10 Ta=75°C -4 10 Ta=25°C 10 -5 10 -6 10 Ta=75°C -7 10 10 -6 10 0 0.1 0.2 0.3 0.4 0.5 0.6 Forward voltage VF (V) -8 Ta=25°C -9 0 5 10 15 Reverse voltage V R (V) Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage f=1MHz Capacitance C (pF) 10 1.0 0.1 0.1 1.0 10 Reverse voltage V R (V) Fig.3 Capacitance Vs. Reverse voltage 3 HSB88WA Package Dimensions 0.1 0.3 +− 0.05 (0.65) (0.65) 0.2 1.3 ± 0.2 0.9 ± 0.1 0.1 0.3 +− 0.05 + 0.1 0.16 − 0.06 0 − 0.1 (0.425) 1.25 ± 0.1 0.1 0.3 +− 0.05 2.1 ± 0.3 2.0 ± 0.2 (0.425) Unit: mm Hitachi Code JEDEC EIAJ Mass (reference value) 4 CMPAK Conforms 0.006 g HSB88WA Cautions 1. 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