HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-118A(Z) Rev. 1 Nov. 1996 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 5.2V through 38V of zener voltage provide flexible application. Ordering Information Type No. Mark Package Code HZ-L Series Type No. DO-35 Outline 1 7 B2 2 Body color is orange Type No. Cathode band 1. Cathode 2. Anode HZ-L Series Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Power dissipation Pd 400 mW Junction temperature Tj 175 °C Storage temperature Tstg -55 to +175 °C Electrical Characteristics (Ta = 25°C) Zener Voltage VZ (V)* 1 Reverese Current Dynamic Resistance Test Condition µA) IR (µ Test Condition rd (Ω Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) HZ6L A1 5.2 5.5 0.5 1 2.0 150 0.5 A2 5.3 5.6 A3 5.4 5.7 B1 5.5 5.8 80 0.5 B2 5.6 5.9 B3 5.7 6.0 C1 5.8 6.1 60 0.5 C2 6.0 6.3 C3 6.1 6.4 A1 6.3 6.6 A2 6.4 6.7 A3 6.6 6.9 B1 6.7 7.0 B2 6.9 7.2 B3 7.0 7.3 C1 7.2 7.6 C2 7.3 7.7 C3 7.5 7.9 A1 7.7 8.1 A2 7.9 8.3 A3 8.1 8.5 HZ7L HZ9L Note: 1. Tested with DC. Rev.1, Nov. 1996, page 2 of 7 0.5 1 3.5 60 0.5 0.5 1 6.0 60 0.5 HZ-L Series Zener Voltage VZ (V)* 1 Reverese Current Dynamic Resistance Test Condition µA) IR (µ Test Condition rd (Ω Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) HZ9L B1 8.3 8.7 0.5 1 6.0 60 0.5 B2 8.5 8.9 B3 8.7 9.1 C1 8.9 9.3 C2 9.1 9.5 C3 9.3 9.7 A1 9.5 9.9 0.5 1 8.0 80 0.5 A2 9.7 10.1 A3 9.9 10.3 B1 10.2 10.6 B2 10.4 10.8 B3 10.7 11.1 C1 10.9 11.3 C2 11.1 11.6 C3 11.4 11.9 A1 11.6 12.1 0.5 1 10.5 80 0.5 A2 11.9 12.4 A3 12.2 12.7 B1 12.4 12.9 B2 12.6 13.1 B3 12.9 13.4 C1 13.2 13.7 C2 13.5 14.0 C3 13.8 14.3 1 14.1 14.7 0.5 1 13.0 80 0.5 2 14.5 15.1 3 14.9 15.5 1 15.3 15.9 0.5 1 14.0 80 0.5 2 15.7 16.5 3 16.3 17.1 HZ11L HZ12L HZ15L HZ16L Note: 1. Tested with DC. Rev.1, Nov. 1996, page 3 of 7 HZ-L Series Zener Voltage VZ (V)* 1 Reverese Current Dynamic Resistance Test Condition µA) IR (µ Test Condition rd (Ω Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) HZ18L 1 16.9 17.7 0.5 1 15.0 80 0.5 2 17.5 18.3 3 18.1 19.0 1 18.8 19.7 0.5 1 18.0 100 0.5 2 19.5 20.4 3 20.2 21.1 1 20.9 21.9 0.5 1 20.0 100 0.5 2 21.6 22.6 3 22.3 23.3 1 22.9 24.0 0.5 1 22.0 120 0.5 2 23.6 24.7 3 24.3 25.5 1 25.2 26.6 0.5 1 24.0 150 0.5 2 26.2 27.6 3 27.2 28.6 1 28.2 29.6 0.5 1 27.0 200 0.5 2 29.2 30.6 3 30.2 31.6 1 31.2 32.6 0.5 1 30.0 250 0.5 2 32.2 33.6 3 33.2 34.6 1 34.2 35.7 0.5 1 33.0 300 0.5 2 35.3 36.8 3 36.4 38.0 HZ20L HZ22L HZ24L HZ27L HZ30L HZ33L HZ36L Note: Note: 1. Tested with DC. 2. Type No. is as follows; HZ6A1L, HZ6A2L, HZ36-3L Rev.1, Nov. 1996, page 4 of 7 HZ-L Series Main Characteristic 10-4 HZ36-2L HZ30-2L HZ24-2L HZ20-1L HZ16-2L HZ12B2L Zener Current I Z (A) 10-3 HZ9B2L HZ6B2L 10-2 10-5 10-6 10-7 10-8 0 5 10 15 20 25 30 35 40 Zener Voltage V Z (V) 0.08 40 %/°C 30 0.04 mV/°C 20 10 0.02 0 0 −10 −0.02 −0.04 −20 −0.06 −30 −0.08 −40 −0.10 0 5 −50 10 15 20 25 30 35 40 Zener Voltage V Z (V) Fig.2 Temperature Coefficient Vs. Zener voltage 500 l 2.5 mm 3 mm 400 Power Dissipation Pd (mW) 50 0.06 z Zener Voltage Temperature Coefficient γ 0.10 Zener Voltage Temperature Coefficient γ z (mV/°C) (%/°C) Fig.1 Zener current Vs. Zener voltage Printed circuit board 100 ×180 ×1.6t mm Quality: paper phenol 300 l=5mm l=10mm 200 l=20mm (Publication value) 100 0 0 50 100 150 Ambient Temperature Ta (°C) 200 Fig.3 Power Dissipation Vs. Ambient Temperature Rev.1, Nov. 1996, page 5 of 7 HZ-L Series Package Dimensions Unit: mm 4.2 Max 26.0 Min φ 2.0 Max 26.0 Min 2 Body color is orange Type No. (Navy blue) Cathode band (Navy blue) φ 0.5 1 7 B2 Abbreviation of type name Type name without HZ ••• L. 7 B2 Zener voltage classification symbol equal to B1 or B3. Expanded drawing of marking Rev.1, Nov. 1996, page 6 of 7 1. Cathode 2. Anode Hitachi Code JEDECCode EIAJCode Weight(g) DO-35 DO-35 SC-48 0.13 HZ-L Series Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 Rev.1, Nov. 1996, page 7 of 7