2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5 V Collector current IC 2.5 A Collector peak current I C(peak) 3 A Collector power dissipation PC 0.75 W 10 W PC * 1 Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C. 2SC1162 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 35 — — V I C = 1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 35 — — V I C = 10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V I E = 1 mA, IC = 0 Collector cutoff current I CBO — — 20 µA VCB = 35 V, IE = 0 60 — 320 VCE = 2 V, IC = 0.5 A hFE 20 — — VCE = 2 V, IC = 1.5 A (pulse test) Base to emitter voltage VBE — 0.93 1.5 V VCE = 2 V, IC = 1.5 A (pulse test) Collector to emitter saturation voltage VCE(sat) — 0.5 1.0 V I C = 2 A, IB = 0.2 A (pulse test) Gain bandwidth product fT — 180 — MHz VCE = 2 V, IC = 0.2 A DC current transfer ratio Note: hFE* 1 1. The 2SC1162 is grouped by h FE as follows. B C D 60 to 120 100 to 200 160 to 320 Maximum Collector Dissipation Curve Area of Safe Operation 5 0.75 TC = 25°C 0.6 1.0 W 0.2 10 0.4 2 = Collector current IC (A) IC(max)(DC Operation) PC Collector power dissipation PC (W) 0.8 0.5 0.2 0.1 0 2 50 100 150 Ambient temperature Ta (°C) 200 1 5 20 50 2 10 Collector to emitter voltage VCE (V) 2SC1162 Typical Output Characteristics Maximum Collector Dissipation Curve 16 TC = 25°C Collector current IC (A) Collector power dissipation PC (W) 2.0 12 8 4 17 1.6 15 1.2 12 10 0.8 8 6 4 0.4 50 100 150 200 Case temperature TC (°C) 0 1 3 4 2 5 Collector to emitter voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 2.0 280 Collector Current IC (A) 1.0 0.5 25 TC = 75°C –25 0.1 0.05 0.02 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base to emitter voltage VBE (V) DC current transfer ratio hFE VCE = 2 V 0 20 2 mA IB = 0 0 0.2 24 240 VCE = 2 V 200 160 TC = 75°C 120 80 25 –25 40 0 0.01 0.3 0.03 0.1 1.0 Collector current IC (A) 3.0 3 Unit: mm 2.7 ± 0.4 120° 3.7 ± 0.7 11.0 ± 0.5 12 0° 2.3 ± 0.3 φ 3.1 +0.15 –0.1 12 0° 8.0 ± 0.5 15.6 ± 0.5 1.1 0.8 2.29 ± 0.5 2.29 ± 0.5 0.55 1.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-126 Mod — — 0.67 g Cautions 1. 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