HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-121A(Z) Rev. 1 Dec. 1996 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 5.2V through 38V of zener voltage provide flexible application. • Suitable for 5mm-pitch high speed automatic insertion. Ordering Information Type No. Mark Package Code HZS-L Series Type No. MHD Outline 7 B 1 2 2 Type No. Cathode band 1. Cathode 2. Anode HZS-L Series Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Power dissipation Pd 400 mW Junction temperature Tj 200 °C Storage temperature Tstg –55 to +175 °C Reverese Current Dynamic Resistance Electrical Characteristics (Ta = 25°C) Zener Voltage VZ (V)* 1 Test Condition µA) IR (µ Test Condition rd (Ω Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) HZS6L A1 5.2 5.5 0.5 1 2.0 150 0.5 A2 5.3 5.6 A3 5.4 5.7 B1 5.5 5.8 80 0.5 B2 5.6 5.9 B3 5.7 6.0 C1 5.8 6.1 60 0.5 C2 6.0 6.3 C3 6.1 6.4 A1 6.3 6.6 60 0.5 A2 6.4 6.7 A3 6.6 6.9 B1 6.7 7.0 B2 6.9 7.2 B3 7.0 7.3 C1 7.2 7.6 C2 7.3 7.7 C3 7.5 7.9 HZS7L Note: 1. Tested with DC. Rev.1, Dec. 1996, page 2 of 7 0.5 1 3.5 HZS-L Series Zener Voltage VZ (V)* 1 Reverese Current Dynamic Resistance Test Condition µA) IR (µ Test Condition rd (Ω Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) HZS9L A1 7.7 8.1 0.5 1 6.0 60 0.5 A2 7.9 8.3 A3 8.1 8.5 B1 8.3 8.7 B2 8.5 8.9 B3 8.7 9.1 C1 8.9 9.3 C2 9.1 9.5 C3 9.3 9.7 A1 9.5 9.9 0.5 1 8.0 80 0.5 A2 9.7 10.1 A3 9.9 10.3 B1 10.2 10.6 B2 10.4 10.8 B3 10.7 11.1 C1 10.9 11.3 C2 11.1 11.6 C3 11.4 11.9 A1 11.6 12.1 0.5 1 10.5 80 0.5 A2 11.9 12.4 A3 12.2 12.7 B1 12.4 12.9 B2 12.6 13.1 B3 12.9 13.4 C1 13.2 13.7 C2 13.5 14.0 C3 13.8 14.3 1 14.1 14.7 0.5 1 13.0 80 0.5 2 14.5 15.1 3 14.9 15.5 1 15.3 15.9 0.5 1 14.0 80 0.5 2 15.7 16.5 3 16.3 17.1 HZS11L HZS12L HZS15L HZS16L Note: 1. Tested with DC. Rev.1, Dec. 1996, page 3 of 7 HZS-L Series Zener Voltage VZ (V)* 1 Reverese Current Dynamic Resistance Test Condition µA) IR (µ Test Condition rd (Ω Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) HZS18L 1 16.9 17.7 0.5 1 15.0 80 0.5 2 17.5 18.3 3 18.1 19.0 1 18.8 19.7 0.5 1 18.0 100 0.5 2 19.5 20.4 3 20.2 21.1 0.5 1 20.0 100 0.5 0.5 1 22.0 120 0.5 0.5 1 24.0 150 0.5 0.5 1 27.0 200 0.5 0.5 1 30.0 250 0.5 0.5 1 33.0 300 0.5 HZS20L HZS22L HZS24L HZS27L HZS30L HZS33L HZS36L Note: Note: 1 20.9 21.9 2 21.6 22.6 3 22.3 23.3 1 22.9 24.0 2 23.6 24.7 3 24.3 25.5 1 25.2 26.6 2 26.2 27.6 3 27.2 28.6 1 28.2 29.6 2 29.2 30.6 3 30.2 31.6 1 31.2 32.6 2 32.2 33.6 3 33.2 34.6 1 34.2 35.7 2 35.3 36.8 3 36.4 38.0 1. Tested with DC. 2. Type No. is as follows; HZS6A1L, HZS6A2L, HZS36-3L Rev.1, Dec. 1996, page 4 of 7 HZS-L Series Main Characteristic 10-4 HZS36-2L HZS24-2L HZS20-2L HZS16-2L HZS12B2L HZS30-2L Zener Current I Z (A) 10-3 HZS9B2L HZS6B2L 10-2 10-5 10-6 10-7 10-8 0 5 15 10 20 25 30 35 40 Zener Voltage V Z (V) Fig.1 Zener current Vs. Zener voltage 0.06 30 0.04 20 mV/°C 10 0.02 0 0 −0.02 −10 −0.04 −20 −0.06 −30 −0.08 −40 −0.10 −50 10 15 20 25 30 35 40 0 5 Zener Voltage VZ (V) Fig.2 Temperature Coefficient Vs. Zener voltage l 2.5 mm 3 mm 400 Power Dissipation Pd (mW) (%/°C) z 40 Zener Voltage Temperature Coefficient γ z (mV/°C) %/°C 0.08 Zener Voltage Temperature Coefficient γ 500 50 0.10 Printed circuit board 100 ×180 ×1.6t mm Quality: paper phenol 300 l=5 mm 200 l=10 mm (Publication value) 100 0 0 50 100 150 Ambient Temperature Ta (°C) 200 Fig.3 Power Dissipation Vs. Ambient Temperature Rev.1, Dec. 1996, page 5 of 7 HZS-L Series Package Dimensions Unit: mm 2.4 Max 1 φ 0.4 7 B 26.0 Min φ 2.0 Max 26.0 Min 2 Type No. (Black) Cathode band (Black) Abbreviation of type name Type name without HZS ••• L. 7 B 2 2 Zener voltage classification symbol equal to B1 or B3. Expanded drawing of marking Rev.1, Dec. 1996, page 6 of 7 1. Cathode 2. Anode Hitachi Code JEDECCode EIAJCode Weight(g) MHD DO-34 0.084 HZS-L Series Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 Rev.1, Dec. 1996, page 7 of 7