IS605, IS606 PHOTON COUPLED ISOLATOR Ga As INFRARED EMITTING DIODE & LIGHT ACTIVATED SCR APPROVALS l UL recognised, File No. E91231 Dimensions in mm 2.54 7.0 6.0 1.2 DESCRIPTION The IS605, IS606 are optically coupled isolators consisting of infrared light emitting diode and a light activated silicon controlled rectifier in a standard 6pin dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High Surge Anode Current (5.0 A) l High Blocking Voltage (400V*1, 625V*1) l Low Turn on Current (5mA typical) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l 10A, T2L compatible, Solid State Relay l 25W Logic Indicator Lamp Driver l 400V Symmetrical transistor coupler OPTION SM OPTION G 7.62 SURFACE MOUNT 0.6 0.1 10.46 9.86 1.25 0.75 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail [email protected] http://www.isocom.com 6/12/00 7.62 6.62 1 6 2 5 3 4 7.62 4.0 3.0 13° Max 0.5 3.0 0.5 3.35 0.26 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Forward Current (Peak) (1µs pulse, 300pps) Reverse Voltage Power Dissipation 60mA 3A 6V 100mW DETECTOR Peak Forward Voltage IS605 IS606 Peak Reverse Gate Voltage RMS On-state Current Peak On-state Current (100µs, 1% duty cycle) Surge Current (10ms) Power Dissipation 400V*1 625V*1 6V 300mA 10A 5A 300mW *1 IMPORTANT : A resistor must be connected between gate and cathode (pins 4 & 6) to prevent false firing (RGK < 56kΩ) ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail [email protected] http://www.isocom.com DB92481m-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) Input Output (note 2) PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) 3 V V IF = 10mA IR = 10µA Peak Off-state Voltage (VDM ) IS605 400 V RGK= 10kΩ, ID= 2µA IS606 625 V RGK= 10kΩ, ID= 2µA Peak Reverse Voltage (VRM ) IS605 400 V RGK= 10kΩ, ID= 2µA IS606 625 V RGK= 10kΩ, ID= 2µA 1.3 V ITM = 300mA Off-state Current (IDM ) IS605 2 µA IS606 2 µA RGK= 10kΩ, IF = 0, VDM= 400V RGK= 10kΩ, IF = 0, VDM= 625V Reverse Current (IR ) IS605 2 µA IS606 2 µA Input Current to Trigger ( IFT ) (note 2) IS605 IS606 Turn on Time ( ton ) 11 14 50 mA mA µs 2 V/µs VRMS VPK Ω pF 1.2 On-state Voltage (VTM ) Coupled Coupled dv/dt, Input to Output (dv/dt) Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Input-output Capacitance Cf Note 1 Note 2 6/12/00 1.1 1.5 500 5300 7500 1011 TEST CONDITION RGK= 10kΩ, IF = 0, VDM= 400V RGK= 10kΩ, IF = 0, VDM= 625V VAK=100V, RGK=27kΩ VAK=100V, RGK=27kΩ RGK=27kΩ, IF=30mΑ, VAK=20V, RL=200Ω See note 1 See note 1 VIO = 500V (note 1) V = 0, f =1MHz Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB92481m-AAS/A1 20 RGK =300Ω 10 1kΩ 4 2 10kΩ 1.0 27kΩ 0.4 56kΩ 0.2 0.1 5 10 12 RGK =300Ω 10 1kΩ 4 2 10kΩ 1.0 27kΩ 0.4 56kΩ 0.2 0.1 -60 -40 -20 50 100 200 Normalized to VAK = 50V RGK =10kΩ TA = 25 °C 90th percentile 10th percentile 0.4 0.2 100 Normalized to VAK = 50V RGK =10kΩ TA = 25 °C RGK =300Ω 40 20 1kΩ 10 4 10kΩ 27kΩ 2 56kΩ 1 0.4 0.2 0.1 1 -40 -20 0 20 40 60 80 100 Ambient temperature TA ( °C ) RGK=1kΩ 56kΩ 2 0 4 6 10 20 40 60 100 200 400 1000 Pulse width ( µs ) 100 VAK = 50V ton = td + tr tr = 1µs 40 20 Forward current I F (mA) 10kΩ 2 Input Characteristics IF vs. VF Turn on Time vs. Input Current Turn on time t on (µs) 80 100 120 Input Current to Trigger vs. Pulse Width 0.1 25°C 10 100°C -55°C 4 2 1 0.4 0.2 0.1 0 10 20 30 40 50 60 70 80 90 100 Input current IF (mA) 6/12/00 20 40 60 Input Current to Trigger Distribution vs. Ambient Temperature 1 16 14 12 10 8 6 4 0 Ambient temperature TA ( °C ) 4 24 22 20 18 Normalized to VAK = 50V, RGK =10kΩ, TA = 25 °C Anode to cathode voltage VAK ( V ) 10 2 Normalized input current to trigger I 40 FT FT Normalized to VAK = 50V RGK =10kΩ TA = 25 °C FT 100 1 Normalized input current to trigger I Input Current to Trigger vs. Ambient Temperature Normalized input current to trigger I Normalized input current to trigger I FT Input Current to Trigger vs. Anode to Cathode Voltage 0 0.5 1 1.5 2 2.5 3 Forward voltage VF ( V ) DB92481m-AAS/A1 Holding Current vs. Ambient Temperature 400 200 10kΩ 100 27kΩ 40 20 10 56kΩ -60 -40 -20 0 20 40 60 80 100 120 Junction to ambient 100 d 1kΩ 1000 1. Lead temperature measured at the widest portion of the SCR anode lead. 400 2. Ambient temperature measured at 200 a point 1/2" from the device. n to lea RGK =300Ω 4000 2000 1000 40 20 10 Junctio Normalized to VAK = 50V RGK =10kΩ TA = 25 °C Transient thermal impedance ( °C / Watt ) 4 2 1 0.001 0.01 Ambient temperature TA ( °C ) 400 200 100 VAK = 625V VAK = 50V 40 20 10 4 2 1 1. Ambient temp. half-sine wave avg 2. Ambient temp. DC current 3. Anode lead temp. half-sine wave avg 4. Anode lead temp. DC current 80 70 60 50 40 30 20 10 25 50 75 100 Ambient temperature TA ( °C ) 1. 0 0.2 2. 3. 4. 400 1 0.4 100 40 1kΩ 10 10kΩ 4 27kΩ 1 0.4 0.2 0.1 0.04 0.02 0.01 56kΩ Increases to forward breakover voltage 0.1 25 50 1.0 2 RGK =300Ω Junction temperature = 100°C 1000 0.4 0.6 0.8 On state current ( Α ) On State Characteristics dV/dt vs. Ambient temperature On state current I T (A) Critical rate of rise applied forward voltage dV/dt (V/ µs) 100 90 0 0 6/12/00 100 On State Current vs. Maximum Allowable Temperature Maximum allowable temperature ( °C ) Normalized forward current off state ( I D ) Normalized to VAK = 50V TA = 25 °C 1 2 4 10 Time (seconds) Off State Forward Current vs. Ambient Temperature 10000 4000 2000 1000 0.1 Junction temperature = 25°C Holding current I H ( µA) 10000 Maximum Transient Thermal Impedence 75 100 Ambient temperature TA ( °C ) 0 1 2 3 On state voltage VT ( V ) 4 DB92481m-AAS/A1