CNY30X, CNY34X CNY30, CNY34 PHOTON COUPLED ISOLATOR Ga As LIGHT ACTIVATED SCR APPROVALS l UL recognised, File No. E91231 Dimensions in mm 2.54 7.0 6.0 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form 7.62 max. 1 6 2 5 3 4 8.3 max. DESCRIPTION The CNY30, CNY34 are optically coupled isolators consisting of infrared light emitting diode and a light activated silicon controlled rectifier in a standard 6pin dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High Surge Anode Current (5.0 A) l High Blocking Voltage (200V*1, 400V*1) l Low Turn on Current (5mA typical) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l 10A, T2L compatible, Solid State Relay l 25W Logic Indicator Lamp Driver l 400V Symmetrical transistor coupler OPTION SM OPTION G SURFACE MOUNT 1.2 0.6 10.2 9.5 1.4 0.9 8.3 max 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 13/11/97 5.1 max. 0.5 min. 3.9 3.1 0.48 15° Max 0.25 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Forward Current (Peak) (1µs pulse, 300pps) Reverse Voltage Power Dissipation 60mA 3A 6V 100mW DETECTOR Peak Forward Voltage CNY30 CNY34 Peak Reverse Gate Voltage RMS On-state Current Peak On-state Current (100µs, 1% duty cycle) Surge Current (10ms) Power Dissipation 200V*1 400V*1 6V 300mA 10A 5A 300mW *1 IMPORTANT : A resistor must be connected between gate and cathode (pins 4 & 6) to prevent false firing (RGK < 56kΩ) ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail [email protected] http://www.isocom.com DB91039-AAS/A3 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) Input Output (note 2) PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) 3 V V IF = 10mA IR = 10µA Peak Off-state Voltage (VDM ) CNY30 200 V CNY34 400 V Peak Reverse Voltage (VRM ) CNY30 RGK=10kΩ, ID= 50µA, TA= 100°C RGK=10kΩ,ID=150µA, TA=100°C 200 V CNY34 400 V 1.2 On-state Voltage (VTM ) Coupled V ITM = 300mA Off-state Current (IDM ) CNY30 50 µA CNY34 150 µA RGK=10kΩ, IF= 0, VDM=200V, TA=100°C RGK=10kΩ, IF= 0, VDM=400V, TA=100°C Reverse Current (IR ) CNY30 50 µA CNY34 150 µA 20 11 mA mA VAK =50V, RGK=10kΩ VAK=100V, RGK=27kΩ 2 V/µs VRMS VPK Ω pF See note 1 See note 1 VIO = 500V (note 1) V = 0, f =1MHz Input Current to Trigger ( IFT ) (note 2) Input-output Isolation Resistance RISO Input-output Capacitance Cf 5/12/00 RGK=10kΩ, ID= 50µA, TA=100°C RGK=10kΩ,ID=150µA, TA=100°C 1.3 Coupled dv/dt, Input to Output (dv/dt) Input to Output Isolation Voltage VISO Note 1 Note 2 1.1 1.5 TEST CONDITION 500 5300 7500 1011 RGK=10kΩ, IF= 0, VDM=200V, TA=100°C RGK=10kΩ, IF= 0, VDM=400V, TA=100°C Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB91039-AAS/A3 20 RGK =300Ω 10 1kΩ 4 2 10kΩ 1.0 27kΩ 0.4 56kΩ 0.2 0.1 5 10 12 RGK =300Ω 10 1kΩ 4 2 10kΩ 1.0 27kΩ 0.4 56kΩ 0.2 0.1 -60 -40 -20 50 100 200 Normalized to VAK = 50V RGK =10kΩ TA = 25 °C 90th percentile 10th percentile 0.4 0.2 100 Normalized to VAK = 50V RGK =10kΩ TA = 25 °C RGK =300Ω 40 20 1kΩ 10 4 10kΩ 27kΩ 2 56kΩ 1 0.4 0.2 0.1 1 -40 -20 0 20 40 60 80 100 Ambient temperature TA ( °C ) RGK=1kΩ 56kΩ 2 0 4 6 10 20 40 60 100 200 400 1000 Pulse width ( µs ) 100 VAK = 50V ton = td + tr tr = 1µs 40 20 Forward current I F (mA) 10kΩ 2 Input Characteristics IF vs. VF Turn on Time vs. Input Current Turn on time t on (µs) 80 100 120 Input Current to Trigger vs. Pulse Width 0.1 25°C 10 100°C -55°C 4 2 1 0.4 0.2 0.1 0 10 20 30 40 50 60 70 80 90 100 Input current IF (mA) 5/12/00 20 40 60 Input Current to Trigger Distribution vs. Ambient Temperature 1 16 14 12 10 8 6 4 0 Ambient temperature TA ( °C ) 4 24 22 20 18 Normalized to VAK = 50V, RGK =10kΩ, TA = 25 °C Anode to cathode voltage VAK ( V ) 10 2 Normalized input current to trigger I 40 FT FT Normalized to VAK = 50V RGK =10kΩ TA = 25 °C FT 100 1 Normalized input current to trigger I Input Current to Trigger vs. Ambient Temperature Normalized input current to trigger I Normalized input current to trigger I FT Input Current to Trigger vs. Anode to Cathode Voltage 0 0.5 1 1.5 2 2.5 3 Forward voltage VF ( V ) DB91039-AAS/A3 Holding Current vs. Ambient Temperature 400 200 10kΩ 100 27kΩ 40 20 10 56kΩ -60 -40 -20 0 20 40 60 80 100 120 Junction to ambient 100 d 1kΩ 1000 1. Lead temperature measured at the widest portion of the SCR anode lead. 400 2. Ambient temperature measured at 200 a point 1/2" from the device. n to lea RGK =300Ω 4000 2000 1000 40 20 10 Junctio Normalized to VAK = 50V RGK =10kΩ TA = 25 °C Transient thermal impedance ( °C / Watt ) 4 2 1 0.001 0.01 Ambient temperature TA ( °C ) 400 200 100 VAK = 400V 40 20 10 4 2 1 100 90 1. Ambient temp. half-sine wave avg 2. Ambient temp. DC current 3. Anode lead temp. half-sine wave avg 4. Anode lead temp. DC current 80 70 60 50 40 30 20 10 1. 25 50 75 100 Ambient temperature TA ( °C ) 0 0.2 3. 4. 400 1 0.4 1kΩ 10 10kΩ On state current I T (A) 100 40 4 27kΩ 1 0.4 0.2 0.1 0.04 0.02 0.01 56kΩ Increases to forward breakover voltage 0.1 25 50 1.0 2 RGK =300Ω Junction temperature = 100°C 1000 0.4 0.6 0.8 On state current ( Α ) On State Characteristics dV/dt vs. Ambient temperature 5/12/00 2. 0 0 Critical rate of rise applied forward voltage dV/dt (V/ µs) VAK = 50V VAK = 200V 100 On State Current vs. Maximum Allowable Temperature Maximum allowable temperature ( °C ) Normalized forward current off state ( I D ) Normalized to VAK = 50V TA = 25 °C 1 2 4 10 Time (seconds) Off State Forward Current vs. Ambient Temperature 10000 4000 2000 1000 0.1 Junction temperature = 25°C Holding current I H ( µA) 10000 Maximum Transient Thermal Impedence 75 100 Ambient temperature TA ( °C ) 0 1 2 3 On state voltage VT ( V ) 4 DB91039-AAS/A3