STD100NH02L N-CHANNEL 20V - 0.0038 Ω - 60A DPAK/IPAK STripFET III POWER MOSFET TYPE STD100NH02L ■ ■ ■ ■ ■ ■ ■ VDSS R DS(on) ID 20 V < 0.0048 Ω 60 A(#) TYPICAL RDS(on) = 0.0038 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) 3 3 1 2 1 IPAK TO-251 (Suffix “-1”) DPAK TO-252 (Suffix “T4”) DESCRIPTION The STD100NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR Parameter Value Unit Drain-source Voltage (VGS = 0) 20 V Drain-gate Voltage (RGS = 20 kΩ) 20 V ± 20 V VGS Gate- source Voltage ID(#) 60 A ID(#) Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C 60 A IDM(•) Drain Current (pulsed) 240 A Ptot E AS (1) Tstg Tj Total Dissipation at TC = 25°C 100 W Derating Factor 0.67 W/°C Single Pulse Avalanche Energy 800 mJ -55 to 175 °C Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area. (#) Value limited by wire bonding December 2002 (1) Starting Tj = 25 oC, ID = 30A, VDD = 10V 1/10 STD100NH02L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max °C/W °C/W °C 1.5 100 300 ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V V(BR)DSS Min. Typ. Max. 20 Unit V 1 10 µA µA ±100 nA Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS I D = 250 µA R DS(on) Static Drain-source On Resistance VGS = 10 V I D = 30 A Min. Typ. 1 V 0.0038 0.0048 Ω Typ. Max. Unit DYNAMIC Symbol 2/10 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 10 V C iss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V f = 1 MHz VGS = 0 RG Gate Input Resistance f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mV Open Drain ID = 30 A Min. 50 S 3940 1020 110 pF pF pF 1.1 Ω STD100NH02L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 10 V I D = 30 A V GS = 10 V R G = 4.7 Ω (Resistive Load, Figure 3) 15 200 Qg Qgs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 10 V ID= 60 A VGS= 10 V 62 12 8 84 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Test Conditions Min. VDD = 10 V I D = 30 A VGS = 10 V RG = 4.7Ω, (Resistive Load, Figure 3) Turn-off Delay Time Fall Time 60 35 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 60 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 60 A di/dt = 100A/µs T j = 150°C VDD = 15 V (see test circuit, Figure 5) trr Qrr IRRM (*)Pulsed: Pulse duration = 300 µs, duty cycle (•)Pulse width limit ed by safe operating area. Safe Operating Area Test Conditions Min. Typ. VGS = 0 47 58 2.5 Max. Unit 60 240 A A 1.3 V ns nC A 1.5 %. Thermal Impedance 3/10 STD100NH02L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/10 STD100NH02L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature . . 5/10 STD100NH02L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STD100NH02L TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 7/10 STD100NH02L TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL ”A” L2 D = 1 = G 2 = = = E = B2 3 B DETAIL ”A” L4 0068772-B 8/10 STD100NH02L 9/10 STD100NH02L Information furnished is believed to be accurate and reliable. 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