Transistors with built-in Resistor UNR1121/1122/1123/1124/112X/112Y (UN1121/1122/1123/1124/112X/112Y) Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 1.0 0.4 1.5 R0.9 R0.9 ● ● ● ● ● ● UNR1121 UNR1122 UNR1123 UNR1124 UNR112X UNR112Y 3 (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 5kΩ 4.6kΩ 0.45±0.05 2 2.5 1 2.5 1.25±0.05 ■ Resistance by Part Number 4.1±0.2 0.85 0.55±0.1 (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ 0.27kΩ 3.1kΩ 4.5±0.1 3.5±0.1 7 0. 2.4±0.2 2.0±0.2 ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. R ● 1.0±0.1 ■ Features 1:Base 2:Collector 3:Emitter M Type Mold Package Internal Connection ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Collector current IC –500 mA Total power dissipation PT 600 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C R1 C B R2 E Note) The part numbers in the parenthesis show conventional part number. 1 Transistors with built-in Resistor ■ Electrical Characteristics UNR1121/1122/1123/1124/112X/112Y (Ta=25˚C) Parameter Symbol Collector cutoff current Conditions VCB = –50V, IE = 0 –1 VCB = –50V, IE = 0 – 0.1 ICEO VCE = –50V, IB = 0 –1 UNR112X ICEO VCE = –50V, IB = 0 – 0.5 IEBO VEB = –6V, IC = 0 –2 VCBO IC = –10µA, IE = 0 UNR1123/1124 UNR1121 hFE UNR1123/1124 VCE = –10V, IC = –100mA UNR112X –50 V 50 60 IC = –100mA, IB = –5mA – 0.25 UNR112X VCE(sat) IC = –10mA, IB = – 0.3mA – 0.25 UNR112Y VCE(sat) IC = –50mA, IB = –5mA VCE(sat) VOH VCC = –5V, VB = – 0.5V, RL = 500Ω Output voltage low level VOL VCC = –5V, VB = –3.5V, RL = 500Ω Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz Output voltage high level V – 0.2 200 2.2 UNR1122 4.7 UNR1123 R1 (–30%) UNR112X 10 UNR112Y (+30%) 3.1 0.8 UNR112X R1/R2 UNR112Y Common characteristics chart PT — Ta 800 600 400 200 0 120 160 Ambient temperature Ta (˚C) 1.0 0.22 0.054 0.67 V MHz 0.27 UNR1124 V – 0.15 –4.9 UNR1121 Resistance ratio Total power dissipation PT (mW) mA 20 Collector to emitter saturation voltage 2 µA 40 UNR1122/112Y 80 µA –1 Collector to base voltage 40 Unit –5 UNR1122/112X/112Y Forward current transfer ratio max ICBO UNR1121 Emitter cutoff current 0 typ UNR112X ICBO Collector cutoff current Input resistance min 1.2 kΩ Transistors with built-in Resistor UNR1121/1122/1123/1124/112X/112Y Characteristics charts of UNR1121 IC — VCE VCE(sat) — IC Ta=25˚C Collector current IC (mA) –200 IB=–1.0mA –160 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –120 –0.4mA –80 –0.3mA –0.2mA –40 –0.1mA Collector to emitter saturation voltage VCE(sat) (V) –100 0 0 –2 –4 –6 –8 –10 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 Collector to emitter voltage VCE (V) –25˚C –3 –10 Ta=75˚C 200 100 25˚C 0 –1 –100 –300 –1000 –3 6 4 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) 8 –10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –30 –10000 f=1MHz IE=0 Ta=25˚C 10 300 Collector current IC (mA) Cob — VCB 12 VCE=–10V –25˚C –0.01 –1 –12 hFE — IC 400 Forward current transfer ratio hFE –240 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 2 –0.03 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 VCB (V) –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 –1 –3 –10 –30 –100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR1122 IC — VCE VCE(sat) — IC Ta=25˚C Collector current IC (mA) –250 IB=–1.0mA –200 –0.9mA –0.8mA –0.7mA –150 –0.6mA –0.5mA –100 –0.4mA –0.3mA –0.2mA –50 –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 Collector to emitter saturation voltage VCE(sat) (V) –100 hFE — IC –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –25˚C –0.03 –0.01 –1 160 IC/IB=10 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) Ta=75˚C VCE= –10V Forward current transfer ratio hFE –300 120 25˚C 80 –25˚C 40 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 3 Transistors with built-in Resistor UNR1121/1122/1123/1124/112X/112Y Cob — VCB IO — VIN –10000 20 16 12 8 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 24 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 4 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UNR1123 IC — VCE VCE(sat) — IC Collector current IC (mA) –200 IB=–1.0mA –0.9mA –0.8mA –0.7mA –160 –120 –0.6mA –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C –100 0 0 –2 –4 –6 –8 –10 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 Collector to emitter voltage VCE (V) –3 –30 –25˚C 100 50 0 –1 –100 –300 –1000 –3 16 12 8 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) 150 IO — VIN f=1MHz IE=0 Ta=25˚C –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 4 –3 0 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 4 –10 –10000 20 25˚C Collector current IC (mA) Cob — VCB 24 Ta=75˚C VCE= –10V –25˚C –0.01 –1 –12 hFE — IC 200 Forward current transfer ratio hFE –240 –1 –0.4 –0.03 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 Transistors with built-in Resistor UNR1121/1122/1123/1124/112X/112Y Characteristics charts of UNR1124 IC — VCE VCE(sat) — IC Collector current IC (mA) –250 IB=–1.0mA –200 –0.9mA –0.8mA –0.7mA –0.6mA –150 –0.5mA –0.4mA –100 –0.3mA –0.2mA –50 –0.1mA Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C 0 0 –2 –4 –6 –8 –10 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –0.01 –1 –12 400 IC/IB=10 –30 Collector to emitter voltage VCE (V) –25˚C –3 –10 –30 VCE= –10V 350 300 250 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 –1 –100 –300 –1000 –3 IO — VIN –10000 16 12 8 –100 –300 –1000 VIN — IO VO=–5V Ta=25˚C –3000 –30 –1000 –10 Output current IO (µA) 20 –30 –100 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C –10 Collector current IC (mA) Collector current IC (mA) Cob — VCB 24 Collector output capacitance Cob (pF) hFE — IC –100 Forward current transfer ratio hFE –300 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 4 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) VCB (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UNR112X IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –200 IB=–1.6mA –160 –1.4mA –1.2mA –120 –1.0mA –0.8mA –80 –0.6mA –0.4mA –40 –0.2mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 hFE — IC IC/IB=10 –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –25˚C –0.03 –0.01 –1 240 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) VCE= –10V Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –240 200 160 Ta=75˚C 120 25˚C 80 –25˚C 40 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 5 Transistors with built-in Resistor UNR1121/1122/1123/1124/112X/112Y Cob — VCB VIN — IO –100 f=1MHz IE=0 Ta=25˚C 20 16 12 8 VO=–0.2V Ta=25˚C –30 Input voltage VIN (V) Collector output capacitance Cob (pF) 24 –10 –3 –1 –0.3 –0.1 4 –0.03 0 –1 –3 –10 –30 –0.01 –0.1 –0.3 –100 –1 –3 –10 –30 –100 Output current IO (mA) Collector to base voltage VCB (V) Characteristics charts of UNR112Y IC — VCE VCE(sat) — IC IB=–1.2mA –160 –1.0mA –0.8mA –120 –0.6mA –80 –0.4mA –40 –0.2mA 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –25˚C –0.03 –0.01 –1 0 –3 Cob — VCB –30 f=1MHz IE=0 Ta=25˚C 16 12 8 VO=–0.2V Ta=25˚C –10 –3 –1 –0.3 –0.1 4 –0.03 0 –1 –3 –10 Collector to base voltage –30 –100 VCB (V) –0.01 –0.1 –0.3 –1 –3 VCE=–10V –10 –30 Output current IO (mA) 200 160 Ta=75˚C 25˚C 120 –25˚C 80 40 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) –30 Input voltage VIN (V) 20 –100 –300 –1000 VIN — IO –100 24 Collector output capacitance Cob (pF) –10 Collector current IC (mA) Collector to emitter voltage VCE (V) 240 Forward current transfer ratio hFE Collector current IC (mA) –200 Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C 6 hFE — IC –100 –240 –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the 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