Composite Transistors XP04316 (XP4316) Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1216(UN1216) + UNR1116(UN1116) ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Collector current IC 100 mA Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Collector current IC –100 mA 1 Total power dissipation PT 150 mW 2 Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Tr2 Storage temperature 0.2±0.1 1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Symbol Tr1 +0.05 0 to 0.1 ● 0.12 –0.02 ■ Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 ● Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 0.425 0.65 ● 2.0±0.1 ■ Features 1.25±0.1 0.65 0.425 0.2±0.05 2.1±0.1 Marking Symbol: 7U Internal Connection 3 Tr1 6 5 Tr2 4 Note.) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors ■ Electrical Characteristics ● (Ta=25˚C) Tr1 Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V ICBO VCB = 50V, IE = 0 0.1 µA ICEO VCE = 50V, IB = 0 0.5 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 0.01 mA Forward current transfer ratio hFE VCE = 10V, IC = 5mA Collector cutoff current Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 0.3mA Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 1kΩ Output voltage low level VOL VCC = 5V, VB = 2.5V, RL = 1kΩ Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz Input resistance R1 ● 160 460 0.25 4.9 V V 0.2 150 V MHz –30% 4.7 +30% kΩ min typ max Unit Tr2 Parameter Collector to base voltage Collector to emitter voltage Symbol Conditions VCBO IC = –10µA, IE = 0 –50 –50 V VCEO IC = –2mA, IB = 0 ICBO VCB = –50V, IE = 0 ICEO VCE = –50V, IB = 0 – 0.5 µA IEBO VEB = –6V, IC = 0 – 0.01 mA Forward current transfer ratio hFE VCE = –10V, IC = –5mA Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = – 0.3mA Output voltage high level VOH VCC = –5V, VB = – 0.5V, RL = 1kΩ Output voltage low level VOL VCC = –5V, VB = –2.5V, RL = 1kΩ Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz Input resistance R1 Collector cutoff current Emitter cutoff current 2 XP04316 V – 0.1 160 460 – 0.25 –4.9 V V – 0.2 80 –30% µA 4.7 V MHz +30% kΩ Composite Transistors XP04316 Common characteristics chart PT — Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of Tr1 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 120 100 0.5mA 0.4mA 80 0.3mA 60 0.2mA 40 20 0.1mA 0 2 4 6 8 10 12 IC/IB=10 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 0.03 0.01 0.1 0 25˚C 250 –25˚C 200 150 100 50 0 0.3 1 3 10 30 100 1 3 4 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 10 Collector current IC (mA) IO — VIN 10000 Output current IO (µA) Collector output capacitance Cob (pF) Ta=75˚C 300 –25˚C Cob — VCB 5 VCE=10V 350 Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C 140 Collector to emitter saturation voltage VCE(sat) (V) 160 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 100 VCB (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 100 Output current IO (mA) 3 Composite Transistors XP04316 Characteristics charts of Tr2 IC — VCE VCE(sat) — IC IB=–1.0mA Collector current IC (mA) –140 Ta=25˚C –0.9mA –0.8mA –120 –0.7mA –0.6mA –100 –0.5mA –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=10 –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 Collector to emitter voltage VCE (V) –10 –10000 –30 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –100 –3 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) 4 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 4 –3 300 IO — VIN f=1MHz IE=0 Ta=25˚C 5 –1 VCE=–10V Collector current IC (mA) Cob — VCB 6 hFE — IC 400 Forward current transfer ratio hFE –160 –1 –0.4 –0.03 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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