Composite Transistors XN04311 (XN4311) Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) ● 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 6 5˚ 5 Features 1.50+0.25 –0.05 ● 4 0.16+0.10 –0.06 1 (0.65) ■ Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) For switching/digital circuits 0.30+0.10 –0.05 0.50+0.10 –0.05 UNR1211(UN1211) + UNR1111(UN1111) ■ Absolute Maximum Ratings Parameter 0 to 0.1 ● 1.1+0.2 –0.1 ■ Basic Part Number of Element (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Collector current IC 100 mA Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Collector current IC –100 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Tr1 Tr2 Storage temperature 1.1+0.3 –0.1 10˚ 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini6-G1 Package Marking Symbol: 7X Internal Connection 6 Tr1 5 4 1 2 Tr2 3 Note) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors ■ Electrical Characteristics ● (Ta=25˚C) Tr1 Parameter Collector to base voltage Collector to emitter voltage Symbol Conditions min VCBO IC = 10µA, IE = 0 50 50 typ max Unit V VCEO IC = 2mA, IB = 0 ICBO VCB = 50V, IE = 0 0.1 ICEO VCE = 50V, IB = 0 0.5 µA IEBO VEB = 6V, IC = 0 0.5 mA Forward current transfer ratio hFE VCE = 10V, IC = 5mA Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 0.3mA 0.25 V Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 1kΩ Output voltage low level VOL VCC = 5V, VB = 2.5V, RL = 1kΩ VCB = 10V, IE = –1mA, f = 200MHz Collector cutoff current Emitter cutoff current Transition frequency fT Input resistance R1 Resistance ratio R1/R2 ● V µA 35 4.9 V 0.2 150 V MHz –30% 10 +30% 0.8 1.0 1.2 min typ max kΩ Tr2 Parameter Symbol Conditions Unit Collector to base voltage VCBO IC = –10µA, IE = 0 –50 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Collector cutoff current 2 XN04311 ICBO VCB = –50V, IE = 0 – 0.1 µA ICEO VCE = –50V, IB = 0 – 0.5 µA – 0.5 mA – 0.25 V Emitter cutoff current IEBO VEB = –6V, IC = 0 Forward current transfer ratio hFE VCE = –10V, IC = –5mA Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = – 0.3mA Output voltage high level VOH VCC = –5V, VB = –0.5V, RL = 1kΩ Output voltage low level VOL VCC = –5V, VB = –2.5V, RL = 1kΩ Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz Input resistance R1 Resistance ratio R1/R2 35 –4.9 V – 0.2 80 V MHz –30% 10 +30% 0.8 1.0 1.2 kΩ Composite Transistors XN04311 Common characteristics chart PT — Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) Characteristics charts of Tr1 IC — VCE VCE(sat) — IC Collector current IC (mA) Ta=25˚C IB=1.0mA 0.9mA 0.8mA 140 0.7mA 0.6mA 0.5mA 120 100 0.4mA 0.3mA 80 60 0.2mA 40 20 0.1mA Collector to emitter saturation voltage VCE(sat) (V) 100 0 0 2 4 6 8 10 Collector to emitter voltage VCE IC/IB=10 30 10 3 1 0.3 25˚C –25˚C 0.03 (V) 1 3 10 Ta=75˚C 200 25˚C –25˚C 100 30 1 100 3 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 4 10 Collector current IC (mA) IO — VIN 10000 Output current IO (µA) Collector output capacitance Cob (pF) 300 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 VCE=10V 0 0.3 Cob — VCB 6 Ta=75˚C 0.1 0.01 0.1 12 hFE — IC 400 Forward current transfer ratio hFE 160 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 100 VCB (V) 1 0.4 0.03 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 100 Output current IO (mA) 3 Composite Transistors XN04311 Characteristics charts of Tr2 IC — VCE VCE(sat) — IC IB=–1.0mA Collector current IC (mA) –140 Ta=25˚C –0.9mA –120 –0.8mA –0.7mA –100 –0.6mA –0.5mA –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=10 –30 –10 –3 –1 –0.3 –25˚C –0.03 –0.01 –0.1 –0.3 –10 –10000 –30 –25˚C 80 40 0 –1 –100 –3 4 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) –3 25˚C 120 IO — VIN f=1MHz IE=0 Ta=25˚C –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –0.03 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage 4 –1 Ta=75˚C VCE= –10V Collector current IC (mA) Cob — VCB 5 Ta=75˚C 25˚C –0.1 Collector to emitter voltage VCE (V) 6 hFE — IC 160 Forward current transfer ratio hFE –160 –30 –100 VCB (V) –1 –0.4 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and 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