ETC 2SK1215E

2SK1215
Silicon N-Channel MOS FET
ADE-208-1176 (Z)
1st. Edition
Mar. 2001
Application
VHF amplifier
Outline
CMPAK
3
1
2
1. Gate
2. Drain
3. Source
2SK1215
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
1
Ratings
Unit
20
V
Drain to source voltage
VDSX*
Gate to source voltage
VGSS
±5
V
Drain current
ID
30
mA
Gate current
IG
±1
mA
Channel power dissipation
Pch
100
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. VGS = –4 V
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSX
20
—
—
V
I D = 100 µA, VGS = –4 V
Gate cutoff current
I GSS
—
—
±20
nA
VGS = ±5 V, VDS = 0
4
—
12
mA
VDS = 10 V, VGS = 0
1
Drain current
I DSS*
Gate to source cutoff voltage
VGS(off)
0
—
–2.0
V
VDS = 10 V, ID = 10 µA
Forward transfer admittance
|yfs|
8
14
—
mS
VDS = 10 V, VGS = 0, f = 1 kHz
Input capacitance
Ciss
—
2.5
—
pF
VDS = 10 V, VGS = 0, f = 1 MHz
Output capacitance
Coss
—
1.6
—
pF
Reverse transfer capacitance
Crss
—
0.03
—
pF
Power gain
PG
24
—
—
dB
Noise figure
NF
—
—
3
dB
Note:
1. The 2SK1215 is grouped by IDSS as follows.
Grade
D
E
F
Mark
IGD
IGE
IGF
I DSS
4 to 8
6 to 10
8 to 12
See characteristic curves of 2SK359.
2
VDS = 10 V, VGS = 0,
f = 100 MHz
2SK1215
Package Dimensions
As of January, 2001
0.1
0.3 +– 0.05
0.2
0.65 0.65
1.3 ± 0.2
0.9 ± 0.1
0.1
0.3 +– 0.05
0.1
0.16 +– 0.06
0 – 0.1
0.425
1.25 ± 0.1
0.1
0.3 +– 0.05
2.1 ± 0.3
2.0 ± 0.2
0.425
Unit: mm
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
CMPAK
—
Conforms
0.006 g
3
2SK1215
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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