PHILIPS BT139B-600E

Philips Semiconductors
Product specification
Triacs
sensitive gate
GENERAL DESCRIPTION
Glass passivated, sensitive gate
triacs in a plastic envelope suitable for
surface mounting, intended for use in
general
purpose
bidirectional
switching
and
phase
control
applications, where high sensitivity is
required in all four quadrants.
PINNING - SOT404
PIN
BT139B series E
QUICK REFERENCE DATA
SYMBOL
VDRM
IT(RMS)
ITSM
PARAMETER
MAX. MAX. MAX. UNIT
BT139BRepetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
500E
500
600E
600
800E
800
V
16
140
16
140
16
140
A
A
PIN CONFIGURATION
SYMBOL
DESCRIPTION
mb
1
main terminal 1
2
main terminal 2
3
gate
mb
T2
T1
2
main terminal 2
1
G
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VDRM
Repetitive peak off-state
voltages
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak
on-state current
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
CONDITIONS
MIN.
-
full sine wave; Tmb ≤ 99 ˚C
full sine wave; Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
T2+ GT2- GT2- G+
over any 20 ms period
MAX.
-500
5001
-600
6001
UNIT
-800
800
V
-
16
A
-
140
150
98
A
A
A2s
-40
-
50
50
50
10
2
5
5
0.5
150
125
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
March 1997
1
Rev 1.000
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT139B series E
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
minimum footprint, FR4 board
junction to ambient
Rth j-a
CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
55
1.2
1.7
-
K/W
K/W
K/W
MIN.
TYP.
MAX.
UNIT
T2+ G+
T2+ GT2- GT2- G+
-
2.5
4.0
5.0
11
10
10
10
25
mA
mA
mA
mA
T2+ G+
T2+ GT2- GT2- G+
VD = 12 V; IGT = 0.1 A
IT = 20 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C
VD = VDRM(max); Tj = 125 ˚C
0.25
-
3.2
16
4.0
5.5
4.0
1.2
0.7
0.4
0.1
30
40
30
40
30
1.6
1.5
0.5
mA
mA
mA
mA
mA
V
V
V
mA
MIN.
TYP.
MAX.
UNIT
-
50
-
V/µs
-
2
-
µs
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
IGT
Gate trigger current
VD = 12 V; IT = 0.1 A
IL
Latching current
IH
VT
VGT
Holding current
On-state voltage
Gate trigger voltage
ID
Off-state leakage current
VD = 12 V; IGT = 0.1 A
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
dVD/dt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; gate open circuit
ITM = 20 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
tgt
March 1997
2
Rev 1.000
Philips Semiconductors
Product specification
Triacs
sensitive gate
25
BT139B series E
BT139
Ptot / W
Tmb(max) / C
20
95
IT(RMS) / A
BT139
= 180
20
99 C
101
120
1
15
90
15
107
60
10
30
10
113
5
119
5
0
0
5
10
IT(RMS) / A
125
20
15
0
-50
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
1000
50
Tmb / C
100
150
Fig.4. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
BT139
ITSM / A
0
50
BT139
IT(RMS) / A
40
30
100
dI T /dt limit
20
I TSM
IT
T2- G+ quadrant
T
10
time
Tj initial = 25 C max
10
10us
100us
1ms
T/s
10ms
0
0.01
100ms
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
150
ITSM / A
100
1.6
ITSM
T
10
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 99˚C.
BT139
IT
0.1
1
surge duration / s
VGT(Tj)
VGT(25 C)
BT136
1.4
time
Tj initial = 25 C max
1.2
1
50
0.8
0.6
0
1
10
100
Number of cycles at 50Hz
0.4
-50
1000
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
March 1997
0
50
Tj / C
100
150
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
3
Rev 1.000
Philips Semiconductors
Product specification
Triacs
sensitive gate
3
IGT(Tj)
IGT(25 C)
BT139B series E
T2+ G+
T2+ GT2- GT2- G+
2.5
Tj = 125 C
Tj = 25 C
typ
40
2
BT139
IT / A
50
BT139E
max
Vo = 1.195 V
Rs = 0.018 Ohms
30
1.5
20
1
10
0.5
0
-50
0
50
Tj / C
100
0
150
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
3
IL(Tj)
IL(25 C)
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.10. Typical and maximum on-state characteristic.
10
TRIAC
2.5
BT139
Zth j-mb (K/W)
1
unidirectional
bidirectional
2
0.1
1.5
P
D
1
tp
0.01
0.5
t
0
-50
0
50
Tj / C
100
0.001
10us
150
IH(Tj)
IH(25C)
1ms
10ms
tp / s
0.1s
1s
10s
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
3
0.1ms
1000
TRIAC
dVD/dt (V/us)
2.5
100
2
1.5
10
1
0.5
0
-50
0
50
Tj / C
100
1
150
50
100
150
Tj / C
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
March 1997
0
4
Rev 1.000
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT139B series E
MECHANICAL DATA
Dimensions in mm
4.5 max
1.4 max
10.3 max
Net Mass: 1.4 g
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.13. SOT404 : centre pin connected to mounting base.
Notes
1. Epoxy meets UL94 V0 at 1/8".
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.14. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
March 1997
5
Rev 1.000
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT139B series E
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
March 1997
6
Rev 1.000