IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package CSC3039 CSC3039 NPN PLASTIC POWER TRANSISTOR Switching Regulator Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 C E F K All dim insions in m m . L N O 1 2 3 O A H B J D G M ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 4A; IB = 0.8A D.C. current gain IC = 0.8 A; VCE = 5 V RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current Collector current (Peak) Base current Continental Device India Limited Data Sheet DIM M IN. A B C D E F G H J K L M N O 14.42 9.63 3.56 3 M A X. 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DE G 7 VCBO VCEO IC Ptot Tj max. max. max. max. max. 500 400 7.0 50 150 V V A W °C VCEsat max. 1.0 V hFE min 15 VCBO VCEO VEBO IC ICP IB max. max. max. max. max. max. 500 400 7.0 7.0 14 3 V V V A A A Page 1 of 3 CSC3039 Total power dissipation up to TC = 25°C Total power dissipation up to TA = 25°C Junction temperature Storage temperature Ptot Ptot Tj Tstg max. 50 W max. 1.75 W max. 150 ºC –65 to +150 ºC ICBO max. 10 µA IEBO max. 10 µA VCEO(sus)* VCBO VEBO min. min. min. 400 V 500 V 7.0 V VCEsat* VBEsat* max. max. 1.0 V 1.5 V hFE* hFE* min. min. 15 8 fT typ. 20 MHz Co typ. 80 pF ton tstg tf max. max. max 1.0 µs 2.5 µs 1.0 µs CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IE = 0; VCB = 400V Emitter cut-off current IC = 0; VEB = 5V Breakdown voltages IC = 5 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltages IC = 4 A; IB = 0.8 A D.C. current gain IC = 0.8A; VCE = 5V IC = 4A; VCE = 5V Transition frequency IC = 0.8A; VCE = 10V Output capacitance f = 1 MHz IE = 0; VCB = 10V Switching time IC = 5A; IB1 = IB2 = –1A RL = 40Ω; V CC = 200V Turn on time Storage time Fall time * Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%. (1) PW ≤ 300 µs; duty cycle ≤ 10%. Continental Device India Limited Data Sheet Page 2 of 3 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail [email protected] www.cdil.com Continental Device India Limited Data Sheet Page 3 of 3