HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process) HN1C03FU Unit: mm For Muting and Switching Applications l Including two devices in US6 (ultra super mini type with 6 leads) l High emitter-base voltage: VEBO = 25V (min) l High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA) l Low on resistance: RON = 1Ω (typ.)(IB = 5mA) Maximum Ratings (Ta = 25°°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 25 V Collector current IC 300 mA Base current IB 60 mA P C* 200 mW Tj 150 °C Tstg −55~150 °C Collector power dissipation Junction temperature Storage temperature range * Total rating 1 JEDEC EIAJ TOSHIBA Weight: 6.8mg ― ― 2-2J1A 2001-06-07 HN1C03FU Electrical Characteristics (Ta = 25°°C) (Q1,Q2 Common) Symbol Test Circuit Collector cut-off current ICBO ― Emitter cut-off current IEBO Characteristic Min Typ. Max Unit VCB = 50V, IE = 0 ― ― 0.1 µA ― VEB = 25V, IC = 0 ― ― 0.1 µA hFE (note) ― VCE = 2V, IC = 4mA 200 ― 1200 Collector-emitter saturation VCE (sat) voltage ― IC = 30mA, IB = 3mA ― 0.042 0.1 V Base-emitter voltage VBE ― VCE = 2V, IC = 4mA ― 0.61 ― V Transition frequency fT ― VCE = 6V, IC = 4mA ― 30 ― MHz Cob ― VCB = 10V, IE = 0, f = 1MHz ― 4.8 7 pF Turn-on time ― ― ― 160 ― Storage time ― ― ― 500 ― Fall time ― ― ― 130 ― DC current gain Collector output capacitance Switching time Test Condition ns Note: hFE Classification A: 200~700, B: 350~1200 Marking Equivalent Circuit (Top View) 2 2001-06-07 HN1C03FU (Q1,Q2 Common) 3 2001-06-07 HN1C03FU (Q1,Q2 Common) 4 2001-06-07 HN1C03FU RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2001-06-07