ETC HT9320F

HT9320F
22-Memory Tone/Pulse Dialer
Features
·
·
·
·
·
·
·
·
·
·
·
Patent Number: 64097, 86474, 113235(R.O.C.), 5424740(U.S.A.)
French specification
Operating voltage: 2.0V~5.5V
Low standby current
Low memory retention current: 0.1mA (typ.)
Tone/pulse switchable
Interface with LCD driver
16 digits for each memory
32 digits for redialing
32 digits for SA memory dialing
One-key redialing
Pause and P®T key for PBX
·
·
·
·
·
·
·
Flash as control key only
3.58MHz crystal or ceramic resonator
Hand-free control
Hold-line control
Pause can be saved for redialing
Resistor options
– M/B ratio
– Pause duration
– Pulse number
– Inter-digit pause for 10pps
Memory number: 22 memories
General Description
The HT9320F also provides SA, Redial and 20
one-touch/two-touch/three-touch memory dialing. If the keyboard includes M1~ M20 keys, it
can be used as one-touch memory dialing. Otherwise, it work as two-touch (PAGE®M1~M10) or
three-touch (A®PAGE®0~9) memory dialing for
speed dialing in either pulse or tone mode.
The HT9320F, originally designed to meet the
French standard, is a CMOS LSI for telecommunication systems. Through resistor option matrix, the
HT9320F can be revised to meet other dialing specifications like; M/B ratio, Pause duration, Pulse
number and Inter-digit pause time.
The HT9320F offers versatile functions such
as: Hold-line, Hand-free and LCD dialing number display interface, all of which are suitable
for feature phone applications.
Selection Table
F u n c tio n
P a rt N o .
H T 9 3 2 0 F
M e m o ry
D ia lin g
S A ,R
M 1 ~ M 2 0
H o ld L in e
H a n d F re e
L C D
In te r fa c e
F la s h
F u n c tio n
F la s h
T im e
(m s )
P u ls e
N o .
T o n e
D u r a tio n
(m s )
In te r -T o n e P a u s e
(m s )
P a c k a g e
C o n tro l
3 0 0
N ,N + 1
1 0 N
8 2 .5
8 5 .5
2 8 D IP
1
January 12, 2000
HT9320F
Block Diagram
F S M
C 1
K e y
C o lu m n
C 8
K e y
F u n c tio n
E n c o d e r
C o n tro l
W R M
C o u n te r
S R A M
A D D R L
R 1
D O U T
C h e c k
C L O C K
T o n e
E n c o d e r
T o n e
O u t
C o n v e rte r
P u ls e
O u t
D T M F
P O
X M U T E
E n c o d e r
K e y R o w
R 5
F la s h
D e b o u n c e
M o d e In
H D /H F
H K S
H F I
H D I
H D O
X 1
X 2
D iv id e r
C lo c k
G e n e ra to r
T im e r
M /B
2
H F O
M O D E
January 12, 2000
HT9320F
Pin Assignment
Keyboard Information
O n e -to u c h m e m o ry k e y b o a rd
C 8
D O U T
1
2 8
C 7
2
2 7
C 6
R 1
3
2 6
C 5
R 2
4
2 5
C 4
R 3
5
2 4
C 3
R 4
6
2 3
C 2
R 5
7
2 2
C 1
H K S
8
2 1
P O
C L O C K
H F I
9
2 0
1 0
1 9
H F O
X M U T E
M O D E
1 1
1 8
D T M F
X 1
1 2
1 7
H D I
X 2
1 3
1 6
H D O
V D D
1 4
1 5
V S S
C 1
C 2
C 3
C 4
C 5
C 6
C 7
C 8
R 1
S A
P
P ® T
M 1
M 6
M 1 1
M 1 6
R 2
1
2
3
F
M 2
M 7
M 1 2
M 1 7
R 3
4
5
6
R 4
7
8
9
S T
M 3
M 8
M 1 3
M 1 8
M 4
M 9
M 1 4
M 1 9
C 5
* /T
0
#
R
M 5
M 1 0
M 1 5
M 2 0
P
T
T w o -to u c h m e m o ry k e y b o a rd
C 1
H T 9 3 2 0 F
2 8 D IP
C 2
C 3
C 4
P A G E
P ® T
2
3
F
4
5
6
R 4
7
8
9
S T
C 5
* /T
0
#
R
R 1
S A
R 2
1
R 3
P
C 5
M 1 /
M 1
M 2 /
M 1
M 3 /
M 1
M 4 /
M 1
M 5 /
M 1
C 6
1
2
3
4
5
M 6 /
M 1 6
M 7 /
M 1 7
M 8 /
M 1 8
M 9 /
M 1 9
M 1 0 /
M 2 0
T h re e -to u c h m e m o ry k e y b o a rd
C 1
C 2
C 3
C 4
R 1
S A
P
P A G E
P ® T
R 2
1
2
3
F
R 3
4
5
6
A
R 4
7
8
9
S T
C 5
* /T
0
#
R
Memory dialing vs. keyboard form table
D ia lin g O u tp u t
O n e -T o u c h
M e m o ry K e y b o a rd
M 1 ~ M 1 0
M 1
M 1 1 ~ M 2 0
M 1 1
~
~
M 1 0
M 2 0
T w o -T o u c h
M e m o ry K e y b o a rd
M 1
~
M 1 0
P A G E
M a
(M a = M 1 ~ M 1 0 )
T h re e -T o u c h
M e m o ry K e y b o a rd
A
A
a
(a = 1 ~ 9 ,0 )
P A G E
a
(a = 1 ~ 9 ,0 )
3
January 12, 2000
HT9320F
Pin Description
Pin Name
C1~C8
R1~R5
I/O
I/O
X1
I
X2
O
XMUTE
HKS
PO
O
I
O
Internal
Connection
Description
CMOS
IN/OUT
These pins form a 5´8 keyboard matrix which can perform
keyboard input detection and dialing specification setting
functions. When on-hook (HKS=high) all the pins are set high.
While off-hook the column group (C1~C8) remains low and the
row group (R1~R5) is set high for key input detection.
An inexpensive single contact 5´8 keyboard can be used as an
input device. Pressing a key connects a single column to a single row, and actuates the system oscillator that results in a dialing signal output. If more than two keys are pressed at the
same time, no response occurs. The key-in debounce time is
20ms. Refer to the keyboard information for keyboard arrangement and to the functional description for dialing specification selection.
The system oscillator consists of an inverter, a bias resistor
and the necessary load capacitor on chip. Connecting a standard 3.579545MHz crystal or ceramic resonator to the X1 and
OSCILLATOR
X2 terminals can implement the oscillator function. The oscillator is turned off in the standby mode, and is actuated whenever a keyboard entry is detected.
NMOS OUT
XMUTE is an NMOS open drain structure pulled to VSS during dialing signal transmission. Otherwise, it is an open circuit. XMUTE is used to mute the speech circuit when
transmitting the dial signal.
CMOS IN
This pin is used to monitor the status of the hook-switch and
its combination with HFI can control the PO pin output to
make or break the line.
HKS=VDD: On-hook state (PO=low). Except for HFI/HDI
(hand-free/hold-line control input), other
functions are all disabled.
HKS=VSS: Off-hook state (PO=high). The chip is in the standby
mode and ready to receive the key input.
CMOS OUT
This pin is a CMOS output structure which by receiving the
HKS and HFO signals, control the dialer to connect or disconnect the telephone line.
PO outputs a low to break the line when HKS is high (on-hook)
and HFO is low (hand-free inactive). PO outputs a high to
make the line when HKS is low (off-hook) or HFO is high or
HDO is high.
During the off-hook state, this pin also outputs the dialing
pulse train in pulse mode dialing. While in the tone mode, this
pin is always high.
4
January 12, 2000
HT9320F
Pin Name
MODE
DTMF
HDI
HDO
HFI
HFO
DOUT
I/O
I/O
O
I
O
I
O
O
Internal
Connection
Description
CMOS
IN/OUT
This is a three-state input/output pin, used for dialing mode
selection, either Tone mode or Pulse mode, 10pps/20pps
MODE=VDD: Pulse mode, 10pps
MODE=OPEN: Pulse mode, 20pps
MODE=VSS: Tone mode
During pulse mode dialing, switching this pin to the tone
mode changes the subsequent digit entry to tone mode. When
the chips are in tone mode, switching to pulse mode will also
be recognized.
CMOS OUT
This pin is active only when the chip transmits tone dialing
signals. Otherwise, it always outputs a low. The pin outputs
tone signals to drive the external transmitter amplifier circuit. The load resistor should not be less than 5kW.
CMOS IN
Pull-high
This pin is a schmitt trigger input structure. Active low. Applying a negative going pulse to this pin can toggle the HDO
output once.
An external RC network is recommended for input
debouncing. The pull-high resistance is 200kW typ.
CMOS OUT
The HDO is a CMOS output structure. Its output is togglecontrolled by a negative transition on HDI. When HDO is toggled high, PO keeps high to hold the line. The hold function
can be released by setting HFO high or by an on-off hook operation or by another HDI input. The HDO pin can directly drive
the HT3810 series melody generator to produce a hold-line
background melody. Refer to the functional description for the
hold-line function section.
CMOS IN
Pull-low
This pin is a schmitt trigger input structure. Active high. Applying a positive going pulse to HFI can toggle the HFO once
and hence control the hand-free function. The pull-low resistance of HFI is 200kW typ.
An external RC network is recommended for input
debouncing.
CMOS OUT
The HFO is a CMOS output structure. Its output is togglecontrolled by a positive transition on HFI pin. When HFO is
high, the hand-free function is enabled and PO outputs a high
to connect the line.
The hand-free function can be released by an on-off-hook operation or by another HFI input or by setting HDO high. Refer to
the functional description for the hand-free function operation.
NMOS OUT
NMOS open drain output pin. It outputs the BCD code of the
dialing digits to the LCD driver chip (HT16XX series) or to the
mC for dialing number display. Refer to the functional description for the detailed timing.
5
January 12, 2000
HT9320F
I/O
Internal
Connection
Description
CLOCK
O
NMOS OUT
NMOS open drain output. When dialing, it outputs a series of
pulse trains for DOUT data synchronization. DOUT data is
valid at the falling edge of the clock.
VDD
¾
¾
Positive power supply, 2.0V~5.5V for normal operation
VSS
¾
¾
Negative power supply
Pin Name
Approximate internal connection circuits
C M O S IN /O U T
N M O S O U T
C M O S IN
V D D
V D D
C M O S IN
P u ll- lo w
C M O S O U T
C M O S IN
P u ll- h ig h
O S C IL L A T O R
X 2
X 1
2 0 P
1 0 M
1 0 P
E N
Absolute Maximum Ratings
Supply Voltage ............................... -0.3V to 6V
Input Voltage ................. VSS-0.3 to VDD+0.3V
Storage Temperature ............... -50°C to 125°C
Operating Temperature ............ -20°C to 75°C
Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may cause substantial damage to the device. Functional operation of this device
at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability.
6
January 12, 2000
HT9320F
Electrical Characteristics
Symbol
Parameter
fOSC=3.5795MHz, Ta=25°C
Test Conditions
VDD
Conditions
Min.
Typ.
Max. Unit
VDD
Operating Voltage
¾
¾
2
¾
5.5
V
IDD
Operating Current
2.5V
Pulse Off-hook
Keypad entry
Tone No load
¾
0.2
1
mA
¾
0.6
2
mA
ISTB
Standby Current
1V
¾
¾
1
mA
VR
Memory Retention Voltage
¾
1
¾
5.5
V
IR
Memory Retention Current
1V
¾
0.1
0.2
mA
VIL
Input Low Voltage
¾
¾
VSS
¾
0.2VDD
V
VIH
Input High Voltage
¾
¾
0.8VDD
¾
VDD
V
IXMO
XMUTE Leakage Current
¾
VXMUTE=12V
No entry
¾
¾
1
mA
IOLXM
XMUTE Sink Current
2.5V VXMUTE=0.5V
1
¾
¾
mA
IHKS
HKS Pin Input Current
2.5V VHKS=2.5V
¾
¾
0.1
mA
RHFI
HFI Pull-Low Resistance
2.5V VHFI=2.5V
¾
200
¾
kW
RHDI
HDI Pull-High Resistance
2.5V VHDI=0V
¾
200
¾
kW
IOH1
Keypad Pin Source Current 2.5V VOH=0V
-4
¾
-40
mA
IOL1
Keypad Pin Sink Current
2.5V VOL=2.5V
200
400
¾
mA
IOH2
HFO Pin Source Current
2.5V VOH=2V
-1
¾
¾
mA
IOL2
HFO Pin Sink Current
2.5V VOL=0.5V
1
¾
¾
mA
IOH3
HDO Pin Source Current
2.5V VOH=2V
-1
¾
¾
mA
IOL3
HDO Pin Sink Current
2.5V VOL=0.5V
1
¾
¾
mA
TFP
Pause Time After Flash
¾
¾
0.2
¾
s
TRP
Pause Time for One-key
Redialing
¾
¾
1
¾
s
TF
Flash Time
¾
¾
¾
0.3
¾
s
TDB
Key-in Debounce Time
¾
¾
¾
20
¾
ms
TBRK
Break Time for One-key
Redialing
¾
One-key redialing
¾
1.2
¾
s
fOSC
System Frequency
¾
Crystal=3.5795MHz
On-hook, no load
No entry
¾
On-hook
¾
One-key redialing
7
3.5759 3.5795 3.5831 MHz
January 12, 2000
HT9320F
Pulse Mode Electrical Characteristics
Symbol
Parameter
fOSC=3.5795MHz, Ta=25°C
Test Conditions
Conditions
VDD
Min.
Typ.
Max. Unit
IPOH
PO Output Source
2.5V VOH=2V
Current
-0.2
¾
¾
mA
IPOL
PO Output Sink
Current
0.2
0.6
¾
mA
PR
Pulse Rate
MODE pin is connected to VDD
¾
10
¾
MODE pin is opened
¾
20
¾
A resistor is linked between
R2 and C1
¾
33:66
¾
No resistor is linked between
R2 and C1
¾
40:60
¾
M/B ratio=40:60
¾
40 (10pps)
20 (20pps)
¾
M/B ratio=33:66
¾
33 (10pps)
17 (20pps)
¾
Pulse rate=10pps. No resistor
is linked between R1 and C5
¾
800
¾
Pulse rate=10pps. A resistor
is linked between R1 and C5
¾
400
¾
Pulse rate=20pps
¾
500
¾
A resistor is linked between
R2 and C1
¾
33 (10pps)
17 (20pps)
¾
No resistor is linked between
R2 and C1
¾
40 (10pps)
20 (20pps)
¾
A resistor is linked between
R2 and C1
¾
66 (10pps)
33 (20pps)
¾
No resistor is linked between
R2 and C1
¾
60 (10pps)
30 (20pps)
¾
M/B
TPDP
TIDP
TM
TB
Make/Break Ratio
Pre-digit-pause
Time
Inter-digit-pause
Time
Pulse Make
Duration
Pulse Break
Duration
2.5V VOL=0.5V
¾
¾
%
¾
¾
¾
¾
8
pps
ms
ms
ms
ms
January 12, 2000
HT9320F
Tone Mode Electrical Characteristics
Symbol
fOSC=3.5795MHz, Ta=25°C
Test Conditions
Parameter
VDD
Conditions
¾
¾
Min.
Typ.
Max.
Unit
0.45VDD
¾
0.7VDD
V
0.1
¾
¾
mA
0.12
0.155
0.18
Vrms
VTDC
DTMF Output DC Level
ITOL
DTMF Sink Current
VTAC
DTMF Output AC Level
RL
DTMF Output Load
2.5V THD £ -23dB
5
¾
¾
kW
ACR
Column Pre-emphasis
2.5V Row group=0dB
1
2
3
dB
THD
Tone Signal Distortion
2.5V RL=5kW
¾
-30
-23
dB
TTMIN
Minimum Tone Duration
¾
Auto-redial
¾
82.5
¾
ms
TITPM
Minimum Inter-tone Pause
¾
Auto-redial
¾
85.5
¾
ms
2.5V VDTMF=0.5V
¾
Row group, RL=5kW
Note: THD (Distortion) (dB) = 20 log ( V12 + V22 + K+ Vn 2 / Vi2 + Vh 2 )
Vi, Vh: Row group and column group signals
V1, V2, ... Vn: Harmonic signals (BW= 300Hz~3500Hz)
Functional Description
Keyboard matrix
C1~C8 and R1~R5 form a keyboard matrix. Together with a standard 5´8 keyboard, the keyboard matrix
is used for dialing entries. In addition, the keyboard matrix also provides resistor options for different dialing specification selections. The keyboard arrangement for the HT9320F is shown in the Keyboard Information.
Tone frequency
Tone Name
Output Frequency (Hz)
% Error
Specified
Actual
R1
697
699
+0.29%
R2
770
766
-0.52%
R3
852
847
-0.59%
R4
941
948
+0.74%
C1
1209
1215
+0.50%
C2
1336
1332
-0.30%
C3
1477
1472
-0.34%
Note: % Error does not contain the crystal frequency drift
9
January 12, 2000
HT9320F
Dialing specification selection
Pulse number selection table
Various dialing specifications can be selected by
adding resistors across keyboard matrix pins.
The allowable option resistor connections are
shown below.
C 1
C 2
C 3
C 4
C 5
R 1
R
R 2
R 3
R
K 2 1
R
R
K 3 1
R
K 4 1
K 5 1
R 4
All the resistors are 330kW. The resistor option
functions and the default specifications (without option resistors) are listed below.
Option
Function
Make/Break
Ratio Selection
40:60
RK21
Pause Duration
Selection
TP=2s
RK31
Pulse Number
Selection
RK51
Pulse Number
No
No
N
No
Yes
N+1
Yes
No
10-N
Yes
Yes
¾
Inter-Digit Pause Time
No
800ms
Yes
400ms
Keypad
N
Inter-digit Pause
Time for 10pps
RK51
Pulse number table
Default
(No Resistor)
RK12
RK41
RK41
Inter-digit pause time for 10pps
K 1 2
Option
Resistor
RK31
800ms
M/B ratio selection table
Output Pulse Number
Digit Key
N
10-N
N+1
1
1
9
2
2
2
8
3
3
3
7
4
4
4
6
5
5
5
5
6
6
6
4
7
7
7
3
8
8
8
2
9
RK12
M/B Ratio (%)
9
9
1
10
No
40:60
0
10
10
1
Yes
33.3:66.6
*/T
P®T
P®T
P®T
#
Ignored
Ignored
Ignored
Pause duration selection table
RK21
TP (sec)
No
2
Yes
3.6
10
January 12, 2000
HT9320F
Hand-free function operation
Hold-line function operation
· Hand-free function execution
· Hold-line function execution
When HDO is low, a falling edge triggers the
HDI, enabling the Hold-line function (HDO
becomes high). The XMUTE remains low
when HDO is high.
When HFO is low, a rising edge triggers the
HFI, enabling the Hand-free function (HFO
becomes high).
· Reset Hand-free function
· Reset Hold-line function
When HFO is high, the Hand-free function is
enabled and can be reset by:
When HDO is high, the Hold-line function is
enabled and can be reset by:
Off-hook
Applying a rising edge to HFI
¨ Changing the HDO pin from low to high
¨
Off-hook
Applying a falling edge to HDI
¨ Changing the HFO pin from low to high
¨
¨
¨
· Hand-free function table
In p u t
C u rre n t S ta te
H K S
H F O
H D O
H D I
H
L
X
H
H
L
X
H
H
H
H
L
L
X
H
L
L
X
H
A n
H
A n
L
L
X
X
X
H : L o g ic H IG H
L : L o g ic L O W
A n
H
L
H
H
H
A n
A n
L
A n
L
H
X : D o n 't c a r e
A n : U n c h a n g e d
H
A n
L
L
X
A n
L
A n
L
A n
H
L
L
L
L
X
L
H
A n
L
A n
L
X
L
A n
L
A n
L
A n
H
H
A n
A n
H
A n
L
H
L
X
X
X
H : L o g ic H IG H
L : L o g ic L O W
11
L
H
L
L
H
L
H F O
A n
L
L
H D O
X
L
: R is in g e d g e
: F a llin g e d g e
L
X
X
A n
L
X
L
H
H
L
L
L
H
H
A n
H D I
H
L
L
H F O
H K S
H K S
A n
N e x t S ta te
H F I
H D O
L
L
In p u t
C u rre n t S ta te
H D O
A n
L
L
L
X
L
H
L
A n
L
L
H F O
A n
H
X
H K S
A n
L
X
H
H F I
· Hold-line function table
N e x t S ta te
L
L
X : D o n 't c a r e
A n : U n c h a n g e d
L
H
: R is in g e d g e
: F a llin g e d g e
January 12, 2000
HT9320F
· F
DOUT BCD code
The flash key is a control key. Pressing the F
key will force the PO pin to be ²low² for the TF
(0.3 sec) duration and is then followed by TFP
(0.2 sec). During the dialing signal transmission, the F key is inhibited.
When dialing, the corresponding 4-bit BCD
codes are serially presented on DOUT from
MSB to LSB. The data of DOUT is valid at the
falling edge of the CLOCK pin. The following
table lists the BCD codes corresponding to the
keyboard input.
· P
Key-In BCD Code Key-In BCD Code
1
0001
8
1000
2
0010
9
1001
3
0011
0
1010
4
0100
*/T
1101
5
0101
#
1100
6
0110
F
1011
7
0111
P
1110
Pause key. The execution of this key pauses
the output for the TP duration. TP can be selected by RK21.
· R
Redial key. Executes redialing as well as
one-key redial function.
· ST
Store key. The execution of this key actuates
the store memory function with (or without)
dialing output. During the dialing signal
transmission, the ST key is inhibited.
· A
Key definition
Auto key. When this key is pressed before
pressing any one of the digital keys (0~9) it
executes the two-touch/three-touch memory
dialing function.
· 0,1,2,3,4,5,6,7,8,9 keys
These are dialing number input keys for both
the pulse mode and the tone mode operations.
· */T
· M1~M20
This key executes the P®T and * tone output
function in the pulse mode. On the other hand,
the */T key executes the * function in the tone
mode.
One-touch memory dialing for speed-dialing
in either pulse or tone mode.
· PAGE
M11~M20 are represented by pressing the
PAGE key and the digital keys (0~9) or
M1~M10. That is to say A ®PAGE® digit key
(0~9) or PAGE M1~M10 executes M11~M20
memory dialing.
· P®T
The key executes the P®T function in the
pulse mode. No response in the tone mode.
· #
This is a dialing signal key for the tone mode
only, no response in the pulse mode.
· SA
Pressing this key can save the preceding dialing telephone numbers. The saved number is
redialed if it is pressed again. SA will also redial the saved number if it is the first key
pressed at the off-hook state. During the dialing signal transmission, the SA key is inhibited.
12
January 12, 2000
HT9320F
Keyboard operation
The following operations are described under an off-hook or on-hook condition with the hand-free active condition.
· N o r m a l d ia lin g
- P u ls e m o d e
- T o n e m o d e
( a ) w ith o u t * /T , P ® T
K e y b o a r d in p u t: D 1
D 2
D ia lin g o u tp u t: D 1
R M : D 1
( a ) w ith o u t * /T , P ® T
K e y b o a r d in p u t: D 1
... D n
D 2 ... D n
D 2 ... D n
R M : D 1
S A M : U n c h a n g e d
D 1
D ia lin g o u tp u t: D 1
D 2
... D n
* /T
D n + 1
D 2 ... D n
( b ) w ith * /T
K e y b o a r d in p u t:
... D m
D 2 ... D n * D n + 1 ... D m
P u ls e
T o n e
* /T D n + 1 ... D m
D 2 ... D n
D 1
D ia lin g o u tp u t: D 1
D 2
... D n
P ® T
D n + 1
R M : D 1
D 2
... D n
D 2 ... D n
D 2 ... D n
* /T
D n + 1
... D m
D n + 1 ... D m
*
D n + 1 ... D m
*
S A M : U n c h a n g e d
( c ) w ith P ® T
K e y b o a r d in p u t:
... D m
D 2 ... D n D n + 1 ... D m
P u ls e
T o n e
P ® T D n + 1 ... D m
D 2 ... D n
D 1
D ia lin g o u tp u t: D 1
S A M : U n c h a n g e d
( c ) w ith P ® T
K e y b o a r d in p u t:
R M : D 1
... D n
D 2 ... D n
S A M : U n c h a n g e d
( b ) w ith * /T
K e y b o a r d in p u t:
R M : D 1
D 2
D ia lin g o u tp u t: D 1
D 1
D ia lin g o u tp u t: D 1
R M : D 1
D 2
... D n
D 2 ... D n
D 2 ... D n
P ® T
D n + 1
... D m
D n + 1 ... D m
D n + 1 ... D m
S A M : U n c h a n g e d
S A M : U n c h a n g e d
N o te : T h e m a x im u m c a p a c ity o f th e R M m e m o r y is 3 2 d ig its . W h e n m o r e th a n 3 2 d ig its a r e e n te r e d , th e s ig n a l is
tr a n s m itte d b u t th e r e d ia l fu n c tio n is in h ib ite d .
· R e d ia l
- P u ls e m o d e
- T o n e m o d e
( a ) w ith o u t * /T , P ® T
R M c o n te n t: D 1 D 2 ... D n
K e y b o a r d in p u t:
( a ) w ith o u t * /T , P ® T
R M c o n te n t: D 1 D 2 ... D n
R
K e y b o a r d in p u t:
D ia lin g o u tp u t: D 1
D 2 ... D n
R M : U n c h a n g e d
R M : U n c h a n g e d
S A M : U n c h a n g e d
( b ) w ith * /T
R M c o n te n t: D 1
S A M : U n c h a n g e d
( b ) w ith * /T
D 2 ... D n
K e y b o a r d in p u t:
* /T
D n + 1 ... D m
R M
R
c o n te n t: D 1
D 2 ... D n
K e y b o a r d in p u t:
D ia lin g o u tp u t: D 1
D 2 ... D n
P u ls e
R M : U n c h a n g e d
D ia lin g o u tp u t: D 1
* /T
D n + 1 ... D m
R
D 2 ... D n
D n + 1 ... D m
*
R M : U n c h a n g e d
S A M : U n c h a n g e d
S A M : U n c h a n g e d
( c ) w ith P ® T
R M c o n te n t: D 1
R
D ia lin g o u tp u t: D 1
D 2 ... D n
( c ) w ith P ® T
D 2 ... D n
K e y b o a r d in p u t:
D ia lin g o u tp u t: D 1
R M : U n c h a n g e d
P ® T
D n + 1 ... D m
R M c o n te n t: D 1 D 2 ... D n
K e y b o a r d in p u t: R
R
D 2 ... D n
P u ls e
D ia lin g o u tp u t: D 1
R M : U n c h a n g e d
P ® T
D 2 ... D n
D n + 1 ... D m
D n + 1 ... D m
S A M : U n c h a n g e d
S A M : U n c h a n g e d
N o te : If th e d ia lin g n u m b e r e x c e e d s 3 2 d ig its , r e d ia lin g is in h ib ite d a n d P O = V D D
13
January 12, 2000
HT9320F
· O n e - k e y r e d ia l
- P u ls e m o d e
- T o n e m o d e
( a ) w ith o u t * /T , P ® T
K e y b o a r d in p u t: D 1
D ia lin g o u tp u t: D 1
R M : D 1
D 2
... D n
D 2 ... D n
P u ls e
D 2 ... D n
T
( a ) w ith o u t * /T
K e y b o a r d in p u t: D 1
R
T
B R K
D 1
R P
D 2 ... D n
P u ls e
R M : D 1
... D n
D 2 ... D n
T
R
T
B R K
R P
D 1
D 2
... D n
D 2 ... D n
S A M : U n c h a n g e d
S A M : U n c h a n g e d
( b ) w ith * /T
K e y b o a r d in p u t: D 1
D 2
... D n
D ia lin g o u tp u t: D 1
R M : D 1
D 2
D ia lin g o u tp u t: D 1
D 2 ... D n *
P u ls e
T B R K T R P D 1 D
P
D 2 ... D n * /T D n + 1 ...
* /T
D n + 1 ... D m
( b ) w ith * /T
K e y b o a r d in p u t: D 1
R
D n + 1 ... D m
T o n e
2 ... D n
u ls e
D m
D 2
D ia lin g o u tp u t: D 1
T
R M : D 1
... D n
D 2 ... D n
T
B R K
D 2 ... D n
R P
* /T
D n + 1 ... D m
R
* D n + 1 ... D m
D 1
D 2 ... D n
D n + 1 ... D m
*
D n + 1 ... D m
*
S A M : U n c h a n g e d
S A M : U n c h a n g e d
( c ) w ith P ® T
K e y b o a r d in p u t: D 1
D ia lin g o u tp u t: D 1
R M : D 1
D 2
D 2
P u
D 1 D 2
P u
D 2 ... D n P ®
... D n
P ® T
D n + 1 ... D m
... D n D n + 1 ... D m
ls e
T o n e
... D n
ls e
T D n + 1 ... D m
T
B R K
T
( c ) w ith P ® T
K e y b o a r d in p u t:
R
D 1
D ia lin g o u tp u t: D 1
R P
T
R M : D 1
D 2
... D n
D 2 ... D n
T
B R K
D 2 ... D n
R P
P ® T
D n + 1 ... D m
R
D n + 1 ... D m
D 1
D 2 ... D n
D n + 1 ... D m
D n + 1 ... D m
S A M : U n c h a n g e d
S A M : U n c h a n g e d
N o te : If th e d ia lin g n u m b e r e x c e e d s 3 2 d ig its , r e d ia lin g is in h ib ite d a n d P O = V D D
· S A c o p y
- P u ls e m o d e
- T o n e m o d e
( a ) w ith o u t * /T , P ® T
K e y b o a r d in p u t: D 1
D ia lin g o u tp u t: D 1
R M : D 1
S A M : D 1
R M : D 1
D 2 ... D n
D 1
D 2 ... D n
S A M : D 1
D 2
... D n
* /T
D n + 1 ... D m
( c ) w ith P ® T
K e y b o a r d in p u t: D 1
D 2
... D n
S A M : D 1
D 2 ... D n
D n + 1 ... D m
S A
P ® T
D n + 1 ... D m
S A M : D 1
D 2 ... D n D n + 1 ... D m
P u ls e
T o n e
P ® T D n + 1 ... D m
D 2 ... D n P ® T
D 1
D 2 ... D n
D 2 ... D n
( c ) w ith P ® T
K e y b o a r d in p u t: D 1
S A
D ia lin g o u tp u t: D 1
R M : D 1
S A M : D 1
D n + 1 ... D m
S A
D 2 ... D n
D ia lin g o u tp u t: D 1
R M : D 1
... D n
D 2 ... D n
D 2 ... D n
( b ) w ith * /T
K e y b o a r d in p u t:
D 2 ... D n * D n + 1 ... D m
P u ls e
T o n e
* /T D n + 1 ... D m
* /T
D ia lin g o u tp u t: D 1
D 2
D ia lin g o u tp u t: D 1
D 2 ... D n
R M : D 1
( a ) w ith o u t * /T , P ® T
K e y b o a r d in p u t: D 1
S A
D 2 ... D n
D ia lin g o u tp u t: D 1
S A M : D 1
... D n
D 2 ... D n
( b ) w ith * /T
K e y b o a r d in p u t:
R M : D 1
D 2
D 2 ... D n
D 2 ... D n
D 2
... D n
D 2 ... D n
* /T
D n + 1 ... D m
S A
D n + 1 ... D m
*
D n + 1 ... D m
*
D n + 1 ... D m
*
D 2
... D n
D 2 ... D n
P ® T
D n + 1 ... D m
S A
D n + 1 ... D m
D n + 1 ... D m
D n + 1 ... D m
N o te : T h e m a x im u m c a p a c ity o f th e R M m e m o r y is 3 2 d ig its . W h e n m o r e th a n 3 2 d ig its p lu s th e " S A " k e y
a r e e n te r e d , th e S A V E fu n c tio n w ill n o t b e e x e c u te d , a n d a ll th e e x is tin g d a ta w ill n o t b e c h a n g e d in
th e s a v e m e m o ry .
14
January 12, 2000
HT9320F
· S A d ia lin g
- P u ls e m o d e
- D T M F m o d e
( a ) w ith o u t * /T , P ® T
S A M c o n te n t: D 1
D 2
( a ) w ith o u t * /T , P ® T
S A M c o n te n t: D 1
... D n
K e y b o a r d in p u t: S A
D ia lin g o u tp u t: D 1
D 2 ... D n
D ia lin g o u tp u t: D 1
R M : U n c h a n g e d
S A M : U n c h a n g e d
D 2 ... D n
* /T
D n + 1 ... D m
( b ) w ith * /T
S A M c o n te n t: D 1
K e y b o a r d in p u t: S A
D ia lin g o u tp u t: D 1
D 2 ... D n
D n + 1 ... D m
*
D n + 1 ... D m
*
R M : U n c h a n g e d
S A M : U n c h a n g e d
S A M : U n c h a n g e d
D 2 ... D n
P ® T
D n + 1 ... D m
( c ) w ith P ® T
S A M c o n te n t: D 1
K e y b o a r d in p u t: S A
D ia lin g o u tp u t: D 1
D 2 ... D n
K e y b o a r d in p u t: S A
D ia lin g o u tp u t: D 1 D 2 ... D n
R M : U n c h a n g e d
( c ) w ith P ® T
S A M c o n te n t: D 1
D 2 ... D n
R M : U n c h a n g e d
S A M : U n c h a n g e d
( b ) w ith * /T
S A M c o n te n t: D 1
D 2 ... D n
K e y b o a r d in p u t: S A
D 2 ... D n
P ® T
D n + 1 ... D m
K e y b o a r d in p u t: S A
D 2 ... D n
D ia lin g o u tp u t: D 1
R M : U n c h a n g e d
D 2 ... D n
D n + 1 ... D m
R M : U n c h a n g e d
S A M : U n c h a n g e d
S A M : U n c h a n g e d
· M e m o ry s to re
- O n e - to u c h m e m o r y s to r e w ith o u t d ia lin g o u tp u t
K e y b o a r d in p u t: S T
D 1
D 2
... D n
S T
- O n e - to u c h m e m o r y s to r e w ith d ia lin g o u tp u t
M a
K e y b o a r d in p u t: D 1
D ia lin g o u tp u t:
D ia lin g o u tp u t: D 1
M a : D 1
D 2 ... D n
M a : D 1
D 2 ... D n
R M : D 1
D 2 ... D n
R M : D 1
D 2 ... D n
S A M : U n c h a n g e d
... D n
S T
S T
M a
S A M : U n c h a n g e d
- T w o - to u c h m e m o r y s to r e w ith o u t d ia lin g o u tp u t
(M 1 ~ M 1 0 )
K e y b o a r d in p u t: S T D 1 D 2 ... D n S T
[ b o r M b ]
(M 1 1 ~ M 2 0 )
K e y b o a r d in p u t: S T D 1 D 2
P A G E [ b
D 2
D 2 ... D n
- T w o - to u c h m e m o r y s to r e w ith d ia lin g o u tp u t
(M 1 ~ M 1 0 )
K e y b o a r d in p u t: D 1
[ b
(M 1 1 ~ M 2 0 )
... D n S T
o r M b ]
D 2
o r
... D n
M b ]
S T
K e y b o a r d in p u t: D 1 D 2 ... D n S T S T
P A G E [ b o r M b ]
D ia lin g o u tp u t:
D ia lin g o u tp u t: D 1
M b : D 1
D 2 ... D n
M b : D 1
D 2 ... D n
M a : D 1
D 2 ... D n (a = b + 1 0 , M 1 0 = M 0 )
M a : D 1
D 2 ... D n (a = b + 1 0 , M 1 0 = M 0 )
R M : D 1
D 2 ... D n
R M : D 1
D 2 ... D n
D 2 ... D n
S A M : U n c h a n g e d
S A M : U n c h a n g e d
- T h r e e - to u c h m e m o r y s to r e w ith o u t d ia lin g o u tp u t
(M 1 1 ~ M 2 0 )
K e y b o a r d in p u t: S T D 1 D 2 ... D n S T
P A G E [ b o r M b ]
S T
- T h r e e - to u c h m e m o r y s to r e w ith d ia lin g o u tp u t
(M 1 1 ~ M 2 0 )
K e y b o a r d in p u t: D 1 D 2 ... D n S T S T
P A G E [ b o r M b ]
D ia lin g o u tp u t:
D ia lin g o u tp u t: D 1
M a : D 1
D 2 ... D n (a = b + 1 0 , M 1 0 = M 0 )
M a : D 1
D 2 ... D n (a = b + 1 0 , M 1 0 = M 0 )
D 2 ... D n
R M : D 1
D 2 ... D n
R M : D 1
D 2 ... D n
S A M : U n c h a n g e d
S A M : U n c h a n g e d
N o te : If th e d ia lin g n u m b e r e x c e e d s 3 2 d ig its , th e m e m o r y s to r e is in h ib ite d .
H o w e v e r , if th e d ia lin g n u m b e r is n o t m o r e th a n 3 2 d ig its th e m e m o r y w ill s to r e a m a x . o f 1 6 d ig its .
M a = M 1 ~ M 2 0 , M b = M 1 ~ M 1 0 , a = 1 ~ 2 0 , b = 1 ~ 9 , 0
15
January 12, 2000
HT9320F
· M e m o r y d ia lin g
- O n e - to u c h m e m o r y d ia lin g ( M 1 ~ M 2 0 )
M a c o n te n t: D 1
- T h r e e - to u c h m e m o r y d ia lin g ( M 1 1 ~ M 2 0 )
D 2 ... D n
K e y b o a r d in p u t:
M a c o n te n t: D 1
D ia lin g o u tp u t: D 1
D 2 ... D n (a = b + 1 0 )
K e y b o a r d in p u t:
M a
D 2 ... D n
D ia lin g o u tp u t: D 1
M a : U n c h a n g e d
M a : U n c h a n g e d
R M : D 1
R M : D 1
D 2 ... D n
S A M : U n c h a n g e d
A
P A G E
[ M b
o r
b
]
D 2 ... D n
D 2 ... D n
S A M : U n c h a n g e d
- T w o - to u c h m e m o r y d ia lin g ( M 1 ~ M 1 0 )
M b c o n te n t: D 1
D 2 ... D n
K e y b o a r d in p u t:
A
[ b
D ia lin g o u tp u t: D 1
o r
M b ]
D 2 ... D n
M b : U n c h a n g e d
R M : D 1
D 2 ... D n
S A M : U n c h a n g e d
N o te : M a = M 1 ~ M 2 0 , a = 1 ~ 2 0
M b = M 1 ~ M 1 0 , b = 1 ~ 9 , 0
· C h a in d ia lin g
M 1 c o n te n t: D 1
D 2 ... D n
M 2 c o n te n t: D n + 1 ... D m
K e y b o a r d in p u t:
D 1
D ia lin g o u tp u t: D 1
D 2
D 2
D 3
D 3
[ M 1
D 1
o r
A
D 2 ... D n
1
] [ M 2
o r
A
2
]
D n + 1 ... D m
M 1 /M 2 : U n c h a n g e d
R M : D 1
D 2
D 3
D 1
D 2 ... D n
D n + 1 ... D m
S A M : U n c h a n g e d
N o te : If th e d ia lin g n u m b e r e x c e e d s 3 2 d ig its , r e d ia lin g is in h ib ite d a n d P O = V D D
· F la s h
- F la s h a s a c o n tr o l k e y
K e y b o a r d in p u t:
D 1
D ia lin g o u tp u t: D 1
D 2
... D n
D 2 ... D n
T
F
D n + 1
... D m
( b r e a k a fla s h tim e ) T
F
F P
D n + 1 ... D m
R M : D n + 1 ... D m
S A M : U n c h a n g e d
· P a u s e
K e y b o a r d in p u t:
D 1
D ia lin g o u tp u t: D 1
R M : D 1
D 2 ... D n
D 2
... D n
P
D 2 ... D n
T
P
P
D n + 1
... D m
D n + 1 ... D m
D n + 1 ... D m
S A M : U n c h a n g e d
· N o te
R M : R e d ia l m e m o r y
S A M : S a v e d ia lin g m e m o r y
D 1 D 2 ... D n : 0 ~ 9
D n + 1 ... D m : 0 ~ 9 , * , #
16
January 12, 2000
HT9320F
Timing Diagrams
Normal dialing
· Pulse mode
H ig h Im p e d a n c e
H K S
K E Y IN
D 1
D 2
tD
R
tD
B
tD
B
B
X M U T E
tP
t ID P - t M
D P
t ID P - t M
t ID P - t M
tP
t ID
D P
tM
P
P O
tB
tM
tM
D T M F
X 2
2 0 m s
2 0 m s
· Tone mode
H ig h Im p e d a n c e
H K S
K E Y IN
D 1
D 2
tD
R
tD
B
tD
B
B
X M U T E
P O
t IT
P M
t IT
t IT
P M
P M
D T M F
tT
M IN
t IT
P M
X 2
2 0 m s
2 0 m s
17
January 12, 2000
HT9320F
Dialing with pause key
· Pulse mode
H ig h Im p e d a n c e
H K S
K E Y IN
D 1
D 2
tD
D 3
P
tP + tP
B
D P
X M U T E
t ID P - t M
tP
t ID
D P
t ID P - t M
tM
P
tM
P O
D T M F
X 2
2 0 m s
· Tone mode
H ig h Im p e d a n c e
H K S
K E Y IN
D 1
D 2
tD
D 3
P
tP
B
X M U T E
P O
tT
M IN
t IT
P M
t IT
P M
D T M F
t IT
P M
X 2
2 0 m s
18
January 12, 2000
HT9320F
Flash key operation
H ig h Im p e d a n c e
H K S
K E Y IN
F
tD
B
X M U T E
P O
tF
tF
P
D T M F
X 2
2 0 m s
Pulse®Tone operation
H ig h Im p e d a n c e
H K S
K E Y IN
D 1
* /T
D 2
tD
D 3
t ID
B
P
X M U T E
tP
D P
t ID
P
+ tP
tM
D P
P O
t IT
(* )
D T M F
tT
M IN
t IT
P M
P M
(D 3 )
tT
M IN
X 2
2 0 m s
19
January 12, 2000
HT9320F
One key redial operation
H ig h Im p e d a n c e
H K S
K E Y IN
D 1
D 2
tD
B
t IT
P M
R
tD
B
t IT
P M
tD
t IT
B
P M
X M U T E
P O
tB
(1 .2 s e c s )
R K
t IT
tR P
(1 s e c )
P M
D T M F
X 2
2 0 m s
CLOCK & DOUT operation
H ig h Im p e d a n c e
H K S
D 1
K E Y IN
X M U T E
tD
tP
B
tB
D P
tM
P O
C L O C K
F
D O U T
C L O C K
= 2 .4 k H z
D a ta
X 2
2 0 m s
N o te : D 1 = D 3 = 3
D 2 = 2
20
January 12, 2000
HT9320F
Application Circuits
T ip
3
6
9
P A G E
R
S T
F
P ® T
R in g
2
5
8
#
P
1
4
7
0
S A
* /T
* R k
(R
* U n
* A
* T h
is
e fe
s p
1 m
e H
M
M
M
M
M
1
2
3
4
5
M
M
M
M
M
3 .3 k W
7
6
5
4
3
1 0
2 2 M W
2 2 0 k W
3 3 k W
H a n d fre e
2 1
1 0 k W
P O
1 6
4 .7 k W
1 7
H D I
V D D
2 .2 k W
8
H K S
9
C L O C K
D O U T
X M U T E
H F O
D T M F
1 0 0 k W
2 7 0 k W
2 2 0 k W
1 N 4 1 4 8 1 N 4 1 4 8
0 .1 m F
1 3
X 2
1 4
1 2
3 9 p F
3 .5 8 M H z
re s o n a to r
X 1
V D D
1 0 0 m F
2 2 k W
2 2 k W
1 m F
1 6 V
1 N 4 1 4 8
2 0 p p s
T o n e
3 9 p F
1 0 p p s
V D D
5 .1 V
1 N 4 1 4 8 x 4
3 3 0 k W
0 .1 m F
0 .1 m F
H o ld
0 6 ! & : :
1 0 0 k W
1 m F
H D O
1 1
M O D E
0 6 ' ! .
& , 12
C 5 C 4 C 3 C 2 C 1 V S S
2 6 2 5
2 4 2 3
2 2
1 5
H F I
1 0 0 k W
2 7
1 0 p F
ty p e
a n d V S S ( G N D ) is r e c o m m e n d e d
v id e s a m e lo d y d u r in g th e h o ld p e r io d
C 6
1 0 m F
5 0 V
)
4 7 k W
O n -h o o k
O ff-h o o k
A 9 2
A 4 2
R 5
R 4
R 3
R 2
R 1
0 .0 2 m F
R k
ig n a l o p tio n
a l d e s c r ip tio n
rs a re o f 8 0 5 0
e e n X M U T E
1 0 s e r ie s ) p r o
R k
1 0 0 k W
d ia lin g s
fu n c tio n
tr a n s is to
c ito r b e tw
X (H T 3 8
6 /
M 1 6
7 /
M 1 7
8 /
M 1 8
9 /
M 1 9
1 0 /
M 2 0
1 A b r id g e
1 /
M 1
2 /
M 1
3 /
M 1
4 /
M 1
5 /
M 1
fo r th e
r to th e
e c ifie d
F c a p a
T 3 8 1 X
1 m F
1 N 4 1 4 8
4 7 k W
1 N 4 1 4 8
1 8
2 0
1 9
2
4 7 k W
1 .5 k W
0 6 $ : :
L C D D R IV E R
(s e e H T 1 6 X X d a ta )
1 5 0 W
1 m F
S P E E C H
N E T W O R K
January 12, 2000
21
HT9320F
Holtek Semiconductor Inc. (Headquarters)
No.3 Creation Rd. II, Science-based Industrial Park, Hsinchu, Taiwan, R.O.C.
Tel: 886-3-563-1999
Fax: 886-3-563-1189
Holtek Semiconductor Inc. (Taipei Office)
5F, No.576, Sec.7 Chung Hsiao E. Rd., Taipei, Taiwan, R.O.C.
Tel: 886-2-2782-9635
Fax: 886-2-2782-9636
Fax: 886-2-2782-7128 (International sales hotline)
Holtek Semiconductor (Hong Kong) Ltd.
RM.711, Tower 2, Cheung Sha Wan Plaza, 833 Cheung Sha Wan Rd., Kowloon, Hong Kong
Tel: 852-2-745-8288
Fax: 852-2-742-8657
Copyright ã 2000 by HOLTEK SEMICONDUCTOR INC.
The information appearing in this Data Sheet is believed to be accurate at the time of publication. However, Holtek
assumes no responsibility arising from the use of the specifications described. The applications mentioned herein are
used solely for the purpose of illustration and Holtek makes no warranty or representation that such applications
will be suitable without further modification, nor recommends the use of its products for application that may present a risk to human life due to malfunction or otherwise. Holtek reserves the right to alter its products without prior
notification. For the most up-to-date information, please visit our web site at http://www.holtek.com.tw.
22
January 12, 2000