R.1.072099 1516-35 35 WATT, 28V, Pulsed Microwave 1450 - 1550 MHz Proposed Product CASE OUTLINE 55AW, Style 1 GENERAL DESCRIPTION The 1516-35 is a common base transistor capable of providing 35 Watts of Class C, RF output power over the band 1450-1550 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes Input and Output prematching and utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature solder sealed package. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @25!C 135 W Maximum Voltage and Current 45V BVCES Collector to Emitter Voltage BVEBO Emitter to Base Voltage 3.5V IC Collector Current 12A Temperatures Storage Temperature -65 to +200!C Operating Junction Temperature +200!C ELECTRICAL CHARACTERISTICS @ 25!!C SYMBOL CHARACTERISTICS POUT PIN Pg "C VSWR Power out F = 1450-1550 Power input VCB = 28 Volts PIN = 7 Watts As Above BVCES BVEBO hFE COB* Collector to Emitter Breakdown IC = 20mA Emitter to Base Breakdown Ie = 15mA Current Gain VCE = 5V, IC = 1A Output Capacitance F = 1MHz, VCB = 28V #jc Thermal Resistance Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS MIN TYP MAX UNITS 35 W W dB % 7 7.0 40 F = 1.45 GHz, PIN = 7 W 10:1 45 3.5 10 V V 100 1.3 O pF C/W *Not measurable due to output match Issued July 1999 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.GHZ.COM OR CONTACT OUR FACTORY DIRECT. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120