1417 - 12A 12 Watt - 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1417-12A is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1400-1700 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes Input prematching and utilizes Gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic high temperature solder sealed package. 55LV, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 29 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 50 Volts 3.5 Volts 2.0 A Maximum Temperatures Storage Temperature Operating Junction Temperature - 65 to + 200 oC + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS Pout Pin Pg Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance ηc VSWR1 BVces BVebo Icbo hFE Cob θjc Collector to Emitter Breakdown Emitter to Base Breakdown Collector to Base Current Current Gain Output Capacitance Thermal Resistance TEST CONDITIONS MIN F = 1.4-1.7 GHz Vcb = 28 Volts Pin = 2.4 Watts As Above F = 1.7 GHz, Pin = 2.4 W 12.0 Ic = 80 mA Ie = 2.0 mA Vcb = 28 Volts 50 3.5 Vce = 5 V, Ic = 800 mA F =1.0 MHz, Vcb = 28 V 20 TYP MAX 2.4 7.0 8.7 40 UNITS Watt Watt dB % 30:1 2.0 12 6.0 Volts Volts mA pF C/W o Issue February 1996 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120