80SQ045N Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes. • • • • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES High Current Capability Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard–Ring for Stress Protection Low Forward Voltage High Surge Capacity Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • • AXIAL LEAD CASE 267–03 STYLE 1 Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case Shipped in plastic bags, 500 per bag Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the part number Polarity: Cathode indicated by Polarity Band ESD Protection: Human Body Model > 4000 V (Class 3) ESD Protection: Machine Model > 400 V (Class C) MARKING DIAGRAM 80SQ045N 80SQ045N= Device Code MAXIMUM RATINGS Rating Symbol Max Unit VRRM VRWM VR 45 V Average Rectified Forward Current TL = 75°C (PsiJL = 12°C/W, P.C. Board Mounting, see Note 2.) IO 8.0 Non–Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Operating and Storage Junction Temperature Range (Reverse Voltage Applied) Voltage Rate of Change (Rated VR) Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 0 ORDERING INFORMATION Device Package Shipping 80SQ045N Axial Lead 500 Units/Bag A 80SQ045NRL Axial Lead 1500/Tape & Reel 140 A Preferred devices are recommended choices for future use and best overall value. TJ, Tstg –65 to +125 °C dv/dt 10 V/ns 1 Publication Order Number: 80SQ045N/D 80SQ045N THERMAL CHARACTERISTICS Characteristic Symbol 0.9 in x 0.9 in Copper Pad Size 6.75 in x 6.75 in Copper Pad Size Unit RθJL 13 12 °C/W RθJA 50 40 Thermal Resistance – Junction–to–Lead (See Note 2. – Mounting Data) Thermal Resistance – Junction–to–Ambient (See Note 2. – Mounting Data) ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) Symbol Characteristic Maximum Instantaneous Forward Voltage (Note 1.) (iF = 8.0 Amps, TL = 25°C) vF Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 1.) TL = 25°C TL = 100°C iR Max Unit V 0.55 mA 1.0 50 1. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. 30 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 30 10 100°C 1 0.1 75°C 125°C 25°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS VOLTAGE (VOLTS) 10 MBR845 1 0.1 0.8 100°C 25°C 0.1 IR, INSTANTANEOUS REVERSE CURRENT (AMPS) Figure 1. Typical Forward Voltage 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS VOLTAGE (VOLTS) 0.8 Figure 2. Maximum Forward Voltage 10,000 1E–01 C, CAPACITANCE (pF) 125°C 1E–02 100°C 75°C 1E–03 1E–04 25°C 1E–05 1E–06 75°C 125°C f = 1 MHz TJ = 25°C 1000 100 0 5 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) 45 50 0.1 Figure 3. Typical Reverse Current 1 10 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Typical Capacitance http://onsemi.com 2 100 75 9 70 8 IF, AVERAGE FORWARD CURRENT (AMPS) COPPER AREA (sq in) 80SQ045N 65 60 55 50 See Note 2. 45 40 dc RJL = 12°C/W 7 6 SQUARE WAVE 5 4 3 2 1 35 0 30 0 2 6 4 8 0 10 20 60 40 80 100 120 RJA (°C/W) TL, LEAD TEMPERATURE (°C) Figure 5. RJA versus Copper Area Figure 6. Current Derating – Lead 140 4.5 NOTE 2. — MOUNTING DATA PFO, AVERAGE POWER DISSIPATION (WATTS) 4 3.5 Mounting Method SQUARE WAVE 3 TJ = 125°C ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ 2.5 dc 2 1.5 1 0.5 0 0 2 4 6 10 8 IO, AVERAGE FORWARD CURRENT (AMPS) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Forward Power Dissipation 1 P.C. Board with 6.75 sq. in. copper surface. L = 3/8 Board Ground Plane D = 0.5 0.2 0.1 0.1 0.05 P(pk) 0.01 Copper Area = 0.271 sq. in. 0.01 0.001 0.0001 t1 RJA = 61.8 °C/W SINGLE PULSE 0.001 0.01 0.1 1.0 t, TIME (sec) Figure 8. Thermal Response, Junction–to–Ambient http://onsemi.com 3 t2 DUTY CYCLE, D = t1/t2 10 100 1000 80SQ045N PACKAGE DIMENSIONS AXIAL LEAD CASE 267–03 ISSUE G K D A 1 2 B K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B D K INCHES MIN MAX 0.370 0.380 0.190 0.210 0.048 0.052 1.000 --- MILLIMETERS MIN MAX 9.40 9.65 4.83 5.33 1.22 1.32 25.40 --- STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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