Transistor 2SB0789, 2SB0789A (2SB789, 2SB789A) Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A) Unit: mm Parameter Symbol Collector to 2SB0789 base voltage 2SB0789A Collector to 2SB0789 Ratings –100 VCBO –120 –100 VCEO emitter voltage 2SB0789A * –120 0.4±0.08 Unit +0.25 0.4max. (Ta=25˚C) +0.1 ■ Absolute Maximum Ratings 45° 4.0–0.20 High collector to emitter voltage VCEO. Large collector power dissipation PC. 1.0–0.2 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 2.5±0.1 ■ Features 0.5±0.08 1.5±0.1 0.4±0.04 3.0±0.15 V 3 2 1 V marking Emitter to base voltage VEBO –5 V Peak collector current ICP –1 A Collector current IC –0.5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : D(2SB0789) E(2SB0789A) Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics (Ta=25˚C) Parameter Conditions Symbol Collector to emitter 2SB0789 voltage 2SB0789A Collector to base voltage Forward current transfer ratio min typ max –100 VCEO IC = –100µA, IB = 0 VEBO IE = –10µA, IC = 0 –5 hFE1* VCE = –10V, IC = –150mA 90 50 V –120 V 220 hFE2 VCE = –5V, IC = –500mA Collector to emitter saturation voltage VCE(sat) IC = –500mA, IB = –50mA – 0.2 – 0.6 Base to emitter saturation voltage VBE(sat) IC = –500mA, IB = –50mA – 0.85 –1.2 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz *h FE1 Unit 120 V V MHz 30 pF Rank classification Marking Symbol Rank Q R hFE1 90 ~ 155 130 ~ 220 2SB0789 DQ DR 2SB0789A EQ ER Note.) The Part numbers in the Parenthesis show conventional part number. 1 Transistor 2SB0789, 2SB0789A PC — Ta IC — VCE Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. –1.2 Ta=25˚C –1.0 –18mA –16mA –14mA 1.0 – 0.8mA – 0.6mA – 0.4mA – 0.6 0.6 – 0.4 0.4 – 0.2mA – 0.2 0.2 0 – 0.4 – 0.2 40 60 80 100 120 140 160 0 0 IC/IB=10 –30 –10 –3 –1 Ta=75˚C 25˚C –25˚C – 0.3 –4 –6 –8 –10 –12 –100 –30 –10 –3 25˚C Ta=–25˚C 75˚C – 0.1 – 0.03 – 0.03 –1 –3 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 Collector current IC (A) Collector output capacitance Cob (pF) 140 120 100 80 60 40 20 0 3 10 –10 30 Emitter current IE (mA) 100 IE=0 f=1MHz Ta=25˚C 45 40 35 30 25 20 15 10 5 0 –1 –3 –10 –9 –12 –15 VCE=–10V –30 500 400 300 Ta=75˚C 200 25˚C –25˚C 100 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Collector current IC (A) Cob — VCB 160 1 –3 50 VCB=–10V Ta=25˚C 180 –1 Collector current IC (A) fT — IE 200 –6 600 IC/IB=10 –1 –3 Base current IB (mA) hFE — IC – 0.3 – 0.1 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 0 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) –100 –2 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) – 0.6 Forward current transfer ratio hFE 20 Ambient temperature Ta (˚C) Transition frequency fT (MHz) – 0.8 0 0 2 –1.0 –12mA –10mA – 0.8 0.8 VCE=–10V Ta=25˚C IB=–20mA Collector current IC (A) 1.2 IC — I B –1.2 Collector current IC (A) Collector power dissipation PC (W) 1.4 –100 Collector to base voltage VCB (V) –10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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