ETC 2SD0814/2SD0814A(2SD814/2SD814A)

Transistor
2SD0814, 2SD0814A (2SD814, 2SD814A)
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise
amplification
Unit: mm
■ Features
Collector to
2SD0814
base voltage
2SD0814A
Collector to
2SD0814
1.45
0.95
0.95
+0.1
0.4 –0.05
+0.1
0.1 to 0.3
0.4±0.2
V
185
Emitter to base voltage
VEBO
Peak collector current
ICP
Collector current
IC
50
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
5
V
100
mA
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : P(2SD0814)
L(2SD0814A)
(Ta=25˚C)
Parameter
Symbol
Collector cutoff current
+0.2
V
185
150
■ Electrical Characteristics
2.9 –0.05
Unit
150
VCEO
emitter voltage 2SD0814A
3
0.16 –0.06
Ratings
VCBO
1
2
(Ta=25˚C)
Symbol
0.65±0.15
0 to 0.1
Parameter
1.5 –0.05
0.8
■ Absolute Maximum Ratings
1.9±0.2
●
+0.25
0.65±0.15
+0.2
●
+0.2
2.8 –0.3
High collector to emitter voltage VCEO.
Low noise voltage NV.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
1.1 –0.1
●
Conditions
min
typ
max
Unit
1
µA
ICBO
VCB = 100V, IE = 0
VCEO
IC = 100µA, IB = 0
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
5
Forward current transfer ratio
hFE*
VCE = 5V, IC = 10mA
90
Collector to emitter saturation voltage
VCE(sat)
IC = 30mA, IB = 3mA
Transition frequency
fT
VCB = 10V, IE = –10mA, f = 200MHz
150
MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
2.3
pF
150
mV
Collector to emitter
2SD0814
voltage
2SD0814A
Noise voltage
*h
FE
150
V
330
1
VCE = 10V, IC = 1mA, GV = 80dB
NV
V
185
Rg = 100kΩ, Function = FLAT
V
Rank classification
Marking
Symbol
Rank
Q
R
S
hFE
90 ~ 155
130 ~ 220
185 ~ 330
2SD0814
PQ
PR
PS
2SD0814A
LQ
LR
LS
Note.) The Part numbers in the Parenthesis show
conventional part number.
1
2SD0814, 2SD0814A
Transistor
PC — Ta
IC — VCE
120
100
160
120
80
40
80
60
0.4mA
40
0.2mA
20
60
80 100 120 140 160
Ambient temperature Ta (˚C)
2
10
3
1
Ta=75˚C
25˚C
–25˚C
0.03
0.01
0.1
0.3
1
3
10
30
100
Collector current IC (mA)
Cob — VCB
IE=0
f=1MHz
Ta=25˚C
4
3
2
1
0
3
10
6
8
10
12
0
0.4
30
100
Collector to base voltage VCB (V)
0.8
1.2
200
500
400
Ta=75˚C
25˚C
–25˚C
200
100
0
0.1
0.3
1
3
2.0
VCB=10V
Ta=25˚C
VCE=10V
300
1.6
Base to emitter voltage VBE (V)
fT — IE
10
30
Collector current IC (mA)
5
1
4
600
Forward current transfer ratio hFE
Collector to emitter saturation voltage VCE(sat) (V)
30
0.1
40
hFE — IC
IC/IB=10
0.3
60
Collector to emitter voltage VCE (V)
VCE(sat) — IC
100
–25˚C
0
0
Transition frequency fT (MHz)
40
Ta=75˚C
80
20
0
20
25˚C
100
IB=2.0mA
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
Collector current IC (mA)
200
0
Collector output capacitance Cob (pF)
VCE=10V
Ta=25˚C
0
2
IC — VBE
120
Collector current IC (mA)
Collector power dissipation PC (mW)
240
100
160
120
80
40
0
–1
–3
–10
–30
Emitter current IE (mA)
–100
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2001 MAR