ETC 2SD1051R

Transistor
2SD1051
Silicon NPN epitaxial planer type
For low-frequency power amplification
Complementary to 2SB0819 (2SB819)
Unit: mm
6.9±0.1
1.5
*
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
40
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
3
A
Collector current
IC
1.5
A
Collector power dissipation
PC*
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
1cm2
Printed circuit board: Copper foil area of
thickness of 1.7mm for the collector portion
1.0
4.1±0.2
4.5±0.1
2.4±0.2 2.0±0.2 3.5±0.1
7
3
2
2.5
1:Base
2:Collector
3:Emitter
1
2.5
EIAJ:SC–71
M Type Mold Package
or more, and the board
(Ta=25˚C)
Parameter
Symbol
ICBO
Collector cutoff current
0.45±0.05
(Ta=25˚C)
Symbol
■ Electrical Characteristics
0.
0.55±0.1
■ Absolute Maximum Ratings
Parameter
0.85
1.25±0.05
●
High collector to emitter voltage VCEO.
Large collector power dissipation PC.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0
R
●
1.0±0.1
●
0.4
■ Features
2.5±0.1
1.5 R0.9
R0.9
max
Unit
VCB = 20V, IE = 0
Conditions
min
typ
1
µA
ICEO
VCE = 10V, IB = 0
100
µA
Emitter cutoff current
IEBO
VEB = 5V, IE = 0
10
µA
Collector to base voltage
VCBO
IC = 1mA, IE = 0
50
V
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
40
V
Forward current transfer ratio
hFE*1
VCE = 5V, IC =
Collector to emitter saturation voltage
VCE(sat)
IC = 1.5A, IB = 0.15A*2
1A*2
80
120
220
1
0.2A*2
Base to emitter saturation voltage
VBE(sat)
IC = 2A, IB =
Transition frequency
fT
VCB = 5V, IE = –0.5A*2, f = 200MHz
150
1.5
Collector output capacitance
Cob
VCB = 20V, IE = 0, f = 1MHz
45
V
MHz
pF
*2
*1h
FE
V
Pulse measurement
Rank classification
Rank
Q
R
hFE
80 ~ 160
120 ~ 220
Note.) The Part number in the Parenthesis shows conventional part number.
1
Transistor
2SD1051
IC — VCE
1.0
0.8
0.6
0.4
Ta=25˚C
3.5
IB=40mA
Collector current IC (A)
35mA
3.0
30mA
2.5
25mA
20mA
2.0
15mA
1.5
10mA
1.0
0.2
5mA
0.5
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
4
10
3
25˚C
Ta=–25˚C
75˚C
0.3
0.1
0.03
1
3
Ta=75˚C
–25˚C
100
50
0.1
0.3
1
3
0.003
0.001
0.01 0.03
20
0
30
100
Collector to base voltage VCB (V)
0.3
1
10
VCB=5V
Ta=25˚C
160
120
80
40
0
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Emitter current IE (A)
ICBO — Ta
1000
VCB=20V
Ta=25˚C
50
300
40
30
20
10
0
0.001
3
200
ICBO (Ta)
ICBO (Ta=25˚C)
40
0.1
Collector current IC (A)
10
60
Collector to emitter voltage VCER (V)
Collector output capacitance Cob (pF)
0.01
VCER — RBE
60
10
0.03
Collector current IC (A)
80
3
25˚C
150
0
0.01 0.03
10
IE=0
f=1MHz
Ta=25˚C
1
–25˚C
0.1
240
200
Cob — VCB
100
25˚C
fT — IE
250
Collector current IC (A)
120
Ta=75˚C
0.3
VCE=5V
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
30
0.3
1
300
IC/IB=10
0.1
10
3
hFE — IC
100
0.01
0.01 0.03
8
IC/IB=10
Collector to emitter voltage VCE (V)
VBE(sat) — IC
1
6
10
Transition frequency fT (MHz)
Collector power dissipation PC (W)
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
0
2
VCE(sat) — IC
4.0
Collector to emitter saturation voltage VCE(sat) (V)
PC — Ta
1.2
100
30
10
3
1
0.01
0.1
1
10
Base to emitter resistance RBE (kΩ)
0
20
40
60
80
100
Ambient temperature Ta (˚C)
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2001 MAR