Transistor 2SC1318A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA0720A (2SA720A) Unit: mm ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 70 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A Collector current IC 0.5 A Collector power dissipation PC 750 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 +0.2 0.45 –0.1 0.45 –0.1 1.27 1.27 2.3±0.2 ● 13.5±0.5 ■ Features 4.0±0.2 5.1±0.2 5.0±0.2 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Parameter Symbol Conditions min typ Unit 0.1 µA ICBO Collector to base voltage VCBO IC = 10µA, IE = 0 80 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 70 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 hFE1*1 VCE = 10V, IC = 150mA*2 85 160 hFE2 VCE = 10V, IC = 500mA*2 40 100 VCE(sat) IC = 300mA, IB = 30mA*2 0.2 0.6 Base to emitter saturation voltage VBE(sat) IC = 300mA, IB = 30mA*2 0.85 1.5 Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 120 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 11 Forward current transfer ratio Collector to emitter saturation voltage VCB = 20V, IE = 0 max Collector cutoff current V 340 FE1 V MHz 20 *2 *1h V pF Pulse measurement Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 Note.) The Part number in the Parenthesis shows conventional part number. 1 2SC1318A Transistor PC — Ta IC — VCE 1.2 IC — I B 1.2 1.2 1.0 0.8 0.6 0.4 0.2 9mA 8mA 7mA 0.8 6mA 5mA 0.6 4mA 3mA 0.4 2mA 0.2 0 40 60 80 100 120 140 160 2 4 6 8 10 0 Collector to emitter voltage VCE (V) 3 1 0.3 Ta=75˚C 25˚C –25˚C 0.01 0.003 0.001 30 10 3 25˚C 1 10 30 100 300 Ta=–25˚C 75˚C 0.3 0.1 0.03 1000 3 10 fT — IE 140 120 100 80 60 40 20 0 –1 30 100 300 1000 –10 25˚C –25˚C 150 100 50 3 –30 Emitter current IE (mA) –100 30 100 300 1000 ICBO — Ta 104 50 VCB=20V IE=0 f=1MHz Ta=25˚C 45 10 Collector current IC (mA) 40 103 35 30 25 20 102 15 10 10 5 1 0 –3 Ta=75˚C 200 1 ICBO (Ta) ICBO (Ta=25˚C) 160 10 250 Cob — VCB Collector output capacitance Cob (pF) 180 8 VCE=10V Collector current IC (A) VCB=10V Ta=25˚C 6 0 1 Collector current IC (mA) 200 4 300 IC/IB=10 0.01 3 2 Base current IB (mA) hFE — IC 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 1 0.4 VBE(sat) — IC 10 0.03 0.6 0 0 VCE(sat) — IC 0.1 0.8 0.2 1mA Forward current transfer ratio hFE 20 Ambient temperature Ta (˚C) Transition frequency fT (MHz) 1.0 0 0 2 VCE=10V Ta=25˚C Collector current IC (A) 1.0 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C IB=–10mA 1 3 10 30 100 Collector to base voltage VCB (V) 0 60 120 180 Ambient temperature Ta (˚C) 2SC1318A Transistor ICEO — Ta 105 VCE=10V ICEO (Ta) ICEO (Ta=25˚C) 104 103 102 10 1 0 20 40 60 80 100 120 140 Ambient temperature Ta (˚C) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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