Transistor 2SC1518 Silicon NPN epitaxial planer type For high-frequency bias oscillation of tape recorders For DC-DC converter Unit: mm 5.9±0.2 4.9±0.2 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances and high efficiency with a low-voltage power supply. 0.7±0.1 +0.3 ● 0.7–0.2 ● 8.6±0.2 ■ Features 13.5±0.5 2.54±0.15 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1.5 A Collector current IC 1 A Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 0.45–0.1 1.27 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package (Ta=25˚C) Parameter Symbol Collector cutoff current +0.2 0.45–0.1 1.27 3.2 ■ Absolute Maximum Ratings Conditions min typ max Unit ICBO VCB = 25V, IE = 0 100 nA ICEO VCE = 20V, IB = 0 1 µA Collector to base voltage VCBO IC = 10µA, IE = 0 25 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 hFE1*1 VCE = 2V, IC = 500mA*2 90 hFE2 VCE = 2V, IC = 1A*2 50 VBE(sat) IC = 500mA, IB = 50mA*2 Forward current transfer ratio Base to emitter saturation voltage V 330 100 1.2 50mA*2 Collector to emitter saturation voltage VCE(sat) IC = 1A, IB = Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 150 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 12 0.5 FE1 V MHz 20 *2 *1h V pF Pulse measurement Rank classification Rank Q R S hFE1 90 ~ 155 130 ~ 220 185 ~ 330 1 Transistor 2SC1518 IC — VCE VCE(sat) — IC 1.2 1.0 1.0 Collector current IC (A) 0.8 0.6 0.4 0.2 IB=5.0mA 4.5mA 4.0mA 0.8 3.5mA 0.6 3.0mA 2.5mA 2.0mA 0.4 1.5mA 1.0mA 0.2 0.5mA 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 Base to emitter saturation voltage VBE(sat) (V) Collector current IC (A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 3 4 5 10 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 –25˚C 0.03 0.01 0.01 0.03 0.3 500 400 Ta=75˚C 25˚C –25˚C 200 100 1 3 Collector current IC (A) 10 3 10 IC/IB=20 10 0.8 0.6 0.4 0 0.2 0.4 0.6 0.8 1.0 Base to emitter saturation voltage VBE(sat) (V) Cob — VCB VCB=10V Ta=25˚C 160 140 120 100 80 60 40 0 –1 1 1.0 10 20 3 0.3 1.2 fT — I E 180 1 0.1 0 0.1 200 Transition frequency fT (MHz) Forward current transfer ratio hFE 25˚C 0.1 0.2 VCE=2V 2 Ta=75˚C 0.3 Ta=25˚C 0.03 hFE — IC 0.3 1 1.4 Collector current IC (A) 600 0.1 3 1.6 30 Base current IB (mA) 0 0.01 0.03 10 Collector current IC (A) IC/IB=10 0.01 0.01 0.03 0 300 10 30 IC — VBE(sat) 100 VCE=2V Ta=25˚C 0.9 2 8 IC/IB=20 VBE(sat) — IC 1.0 1 6 100 Collector to emitter voltage VCE (V) IC — IB 0 4 Collector current IC (A) 0 50 Collector output capacitance Cob (pF) Collector power dissipation PC (W) Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.2 IE=0 f=1MHz Ta=25˚C 45 40 35 30 25 20 15 10 5 0 –3 –10 –30 Emitter current IE (mA) –100 1 3 10 30 100 Collector to base voltage VCB (V) Transistor 2SC1518 ICBO — Ta 104 ICEO — Ta 105 VCB=25V Area of safe operation (ASO) VCE=20V Collector current IC (A) ICEO (Ta) ICEO (Ta=25˚C) ICBO (Ta) ICBO (Ta=25˚C) Single pulse Ta=25˚C 3 104 103 102 10 103 102 10 ICP 1 IC t=50ms 0.3 DC 0.1 10 0.03 1 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0.01 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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