Transistor 2SA1762 Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC4606 Unit: mm 6.9±0.1 1.0 0.85 * (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –5 V Peak collector current ICP –1 A Collector current IC – 0.5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics 4.5±0.1 0.55±0.1 3 0.45±0.05 2 2.5 1:Base 2:Collector 3:Emitter 1 1.25±0.05 ■ Absolute Maximum Ratings 4.1±0.2 7 0. High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 1.5 2.5 EIAJ:SC–71 M Type Mold Package or more, and the board (Ta=25˚C) Parameter Symbol Conditions min typ max Unit µA ICBO Collector to base voltage VCBO IC = –10µA, IE = 0 –80 V Collector to emitter voltage VCEO IC = –100µA, IB = 0 –80 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 hFE1* VCE = –10V, IC = –150mA 130 50 Forward current transfer ratio VCB = –20V, IE = 0 – 0.1 Collector cutoff current V 330 hFE2 VCE = –5V, IC = –500mA Collector to emitter saturation voltage VCE(sat) IC = –300mA, IB = –30mA – 0.2 – 0.4 Base to emitter saturation voltage VBE(sat) IC = –300mA, IB = –30mA – 0.85 –1.2 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 85 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1 MHz 11 *h FE1 100 V V MHz 20 pF Rank classification Rank R S hFE1 130 ~ 220 185 ~ 330 1 2SA1762 Transistor PC — Ta IC — VCE 1.0 0.8 –1.2 Ta=25˚C IB=–10mA –1.0 –8mA –7mA – 0.8 0.6 –6mA –5mA – 0.6 0.4 –4mA –3mA – 0.4 0.2 – 0.8 – 0.6 –1mA – 0.2 0 40 60 80 100 120 140 160 0 0 –2 –10 Ta=75˚C 25˚C –25˚C – 0.3 –10 –30 –10 –3 25˚C Ta=–25˚C –1 75˚C – 0.1 – 0.03 – 0.03 –3 –10 –30 –100 –300 –1000 – 0.01 –1 Collector current IC (mA) –3 –10 40 20 0 1 3 10 30 100 300 Emitter current IE (mA) 1000 –10 200 Ta=75˚C 25˚C 150 –25˚C 100 50 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) ICBO — Ta 104 IE=0 f=1MHz Ta=25˚C 50 –8 250 0 –1 –100 –300 –1000 VCB=–20V 103 ICBO (Ta) ICBO (Ta=25˚C) 60 Collector output capacitance Cob (pF) 80 60 –6 VCE=–10V Cob — VCB VCB=–10V f=200MHz Ta=25˚C 100 –30 –4 300 Collector current IC (mA) fT — IE 120 –2 Base current IB (mA) IC/IB=10 – 0.3 – 0.1 – 0.01 –1 0 hFE — IC –100 Base to emitter saturation voltage VBE(sat) (V) –30 –1 –8 VBE(sat) — IC IC/IB=10 –3 –6 Collector to emitter voltage VCE (V) VCE(sat) — IC –10 –4 Forward current transfer ratio hFE 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) –1.0 – 0.4 –2mA – 0.2 0 Transition frequency fT (MHz) –9mA VCE=–10V Ta=25˚C Collector current IC (A) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 IC — IB –1.2 Collector current IC (A) Collector power dissipation PC (W) 1.2 40 30 20 102 10 10 0 –1 1 –3 –10 –30 –100 Collector to base voltage VCB (V) 0 60 120 180 Ambient temperature Ta (˚C) 2SA1762 Transistor ICEO — Ta 105 Area of safe operation (ASO) –10 VCE=–10V Single pulse Ta=25˚C –3 Collector current IC (A) ICEO (Ta) ICEO (Ta=25˚C) 104 –1 ICP IC t=10ms – 0.3 103 t=1s – 0.1 102 – 0.03 – 0.01 10 – 0.003 1 0 20 40 60 80 100 120 140 Ambient temperature Ta (˚C) – 0.001 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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