ETC 2SC1317S

Transistor
2SC1317, 2SC1318
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SA0719 (2SA719) and 2SA0720 (2SA720)
Unit: mm
5.0±0.2
Low collector to emitter saturation voltage VCE(sat).
Complementary pair with 2SA0719 and 2SA0720.
■ Absolute Maximum Ratings
Parameter
(Ta=25˚C)
Symbol
Collector to
2SC1317
base voltage
2SC1318
Collector to
2SC1317
Ratings
30
VCBO
V
60
1.27
VEBO
7
V
Peak collector current
ICP
1
A
Collector current
IC
500
mA
Collector power dissipation
PC
625
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
Symbol
2SC1317
voltage
2SC1318
Collector to emitter
2SC1317
voltage
2SC1318
Emitter to base voltage
1 2 3
2.54±0.15
Conditions
ICBO
Collector to base
1.27
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
(Ta=25˚C)
Parameter
Collector cutoff current
+0.2
0.45 –0.1
V
50
Emitter to base voltage
■ Electrical Characteristics
+0.2
0.45 –0.1
25
VCEO
emitter voltage 2SC1318
Unit
2.3±0.2
●
13.5±0.5
●
5.1±0.2
■ Features
4.0±0.2
min
typ
VCB = 20V, IE = 0
VCBO
IC = 10µA, IE = 0
VCEO
IC = 10mA, IB = 0
VEBO
IE = 10µA, IC = 0
max
Unit
0.1
µA
30
V
60
25
V
50
7
V
150mA*2
85
160
hFE2
VCE = 10V, IC = 500mA*2
40
90
Collector to emitter saturation voltage
VCE(sat)
IC = 300mA, IB = 30mA
0.35
0.6
V
Base to emitter saturation voltage
VBE(sat)
IC = 300mA, IB = 30mA
1.1
1.5
V
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
200
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
hFE1
Forward current transfer ratio
*1
VCE = 10V, IC =
340
MHz
6
15
*2
*1h
FE1
pF
Pulse measurement
Rank classification
Rank
Q
R
S
hFE1
85 ~ 170
120 ~ 240
170 ~ 340
Note.) The Part numbers in the Parenthesis show conventional part number.
1
2SC1317, 2SC1318
Transistor
IC — VCE
700
700
600
500
400
300
200
100
Ta=25˚C
IB=10mA
9mA
8mA
7mA
6mA
5mA
600
500
4mA
400
3mA
300
2mA
200
1mA
60
80 100 120 140 160
Ambient temperature Ta (˚C)
4
30
10
3
1
Ta=75˚C
25˚C
–25˚C
0.1
0.03
0.3
8
16
1
3
10
3
25˚C
Ta=75˚C
1
–25˚C
0.3
0.1
0.03
0.1
2
0.3
200
160
120
80
40
Collector output capacitance Cob (pF)
VCB=10V
Ta=25˚C
1
3
Emitter current IE (mA)
–100
10
250
Ta=75˚C
200
25˚C
–25˚C
150
100
50
0
0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
VCER — RBE
8
6
4
2
0
–30
8
VCE=10V
10
IE=0
f=1MHz
Ta=25˚C
10
6
300
Cob — VCB
12
4
Base current IB (mA)
Collector current IC (A)
fT — I E
–10
0
hFE — IC
30
0.01
0.01 0.03
10
240
–3
200
20
IC/IB=10
Collector current IC (A)
0
–1
12
100
Base to emitter saturation voltage VBE(sat) (V)
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10
0.1
300
VBE(sat) — IC
100
0.01
0.01 0.03
400
Collector to emitter voltage VCE (V)
VCE(sat) — IC
0.3
500
0
0
Forward current transfer ratio hFE
40
120
Collector to emitter voltage VCER (V)
20
600
100
0
0
Transition frequency fT (MHz)
VCE=10V
Ta=25˚C
700
100
0
2
IC — IB
800
Collector current IC (mA)
800
Collector current IC (mA)
Collector power dissipation PC (mW)
PC — Ta
800
IC=2mA
Ta=25˚C
100
80
60
2SC1318
40
2SC1317
20
0
1
3
10
30
100
Collector to base voltage VCB (V)
1
3
10
30
100
300
1000
Base to emitter resistance RBE (kΩ)
2SC1317, 2SC1318
Transistor
ICEO — Ta
104
Area of safe operation (ASO)
10
VCE=10V
Single pulse
Ta=25˚C
Collector current IC (A)
3
ICEO (Ta)
ICEO (Ta=25˚C)
103
102
10
ICP
1
t=10ms
IC
0.3
t=1s
DC
0.1
0.03
0.01
0.003
1
0
40
80
120
160
200
Ambient temperature Ta (˚C)
0.001
0.1
0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)
3
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2001 MAR