Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA0719 (2SA719) and 2SA0720 (2SA720) Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA0719 and 2SA0720. ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Collector to 2SC1317 base voltage 2SC1318 Collector to 2SC1317 Ratings 30 VCBO V 60 1.27 VEBO 7 V Peak collector current ICP 1 A Collector current IC 500 mA Collector power dissipation PC 625 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Symbol 2SC1317 voltage 2SC1318 Collector to emitter 2SC1317 voltage 2SC1318 Emitter to base voltage 1 2 3 2.54±0.15 Conditions ICBO Collector to base 1.27 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Parameter Collector cutoff current +0.2 0.45 –0.1 V 50 Emitter to base voltage ■ Electrical Characteristics +0.2 0.45 –0.1 25 VCEO emitter voltage 2SC1318 Unit 2.3±0.2 ● 13.5±0.5 ● 5.1±0.2 ■ Features 4.0±0.2 min typ VCB = 20V, IE = 0 VCBO IC = 10µA, IE = 0 VCEO IC = 10mA, IB = 0 VEBO IE = 10µA, IC = 0 max Unit 0.1 µA 30 V 60 25 V 50 7 V 150mA*2 85 160 hFE2 VCE = 10V, IC = 500mA*2 40 90 Collector to emitter saturation voltage VCE(sat) IC = 300mA, IB = 30mA 0.35 0.6 V Base to emitter saturation voltage VBE(sat) IC = 300mA, IB = 30mA 1.1 1.5 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 200 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz hFE1 Forward current transfer ratio *1 VCE = 10V, IC = 340 MHz 6 15 *2 *1h FE1 pF Pulse measurement Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 Note.) The Part numbers in the Parenthesis show conventional part number. 1 2SC1317, 2SC1318 Transistor IC — VCE 700 700 600 500 400 300 200 100 Ta=25˚C IB=10mA 9mA 8mA 7mA 6mA 5mA 600 500 4mA 400 3mA 300 2mA 200 1mA 60 80 100 120 140 160 Ambient temperature Ta (˚C) 4 30 10 3 1 Ta=75˚C 25˚C –25˚C 0.1 0.03 0.3 8 16 1 3 10 3 25˚C Ta=75˚C 1 –25˚C 0.3 0.1 0.03 0.1 2 0.3 200 160 120 80 40 Collector output capacitance Cob (pF) VCB=10V Ta=25˚C 1 3 Emitter current IE (mA) –100 10 250 Ta=75˚C 200 25˚C –25˚C 150 100 50 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) VCER — RBE 8 6 4 2 0 –30 8 VCE=10V 10 IE=0 f=1MHz Ta=25˚C 10 6 300 Cob — VCB 12 4 Base current IB (mA) Collector current IC (A) fT — I E –10 0 hFE — IC 30 0.01 0.01 0.03 10 240 –3 200 20 IC/IB=10 Collector current IC (A) 0 –1 12 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 0.1 300 VBE(sat) — IC 100 0.01 0.01 0.03 400 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.3 500 0 0 Forward current transfer ratio hFE 40 120 Collector to emitter voltage VCER (V) 20 600 100 0 0 Transition frequency fT (MHz) VCE=10V Ta=25˚C 700 100 0 2 IC — IB 800 Collector current IC (mA) 800 Collector current IC (mA) Collector power dissipation PC (mW) PC — Ta 800 IC=2mA Ta=25˚C 100 80 60 2SC1318 40 2SC1317 20 0 1 3 10 30 100 Collector to base voltage VCB (V) 1 3 10 30 100 300 1000 Base to emitter resistance RBE (kΩ) 2SC1317, 2SC1318 Transistor ICEO — Ta 104 Area of safe operation (ASO) 10 VCE=10V Single pulse Ta=25˚C Collector current IC (A) 3 ICEO (Ta) ICEO (Ta=25˚C) 103 102 10 ICP 1 t=10ms IC 0.3 t=1s DC 0.1 0.03 0.01 0.003 1 0 40 80 120 160 200 Ambient temperature Ta (˚C) 0.001 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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