Transistor 2SB0643, 2SB0644 (2SB643, 2SB644) Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD0638 (2SD638) and 2SD0639 (2SD639) Unit: mm 6.9±0.1 Symbol Collector to 2SB0643 base voltage 2SB0644 Collector to 2SB0643 0.55±0.1 –30 –25 VCEO 2 1 V –50 Emitter to base voltage VEBO –7 V Peak collector current ICP –1 A Collector current IC – 0.5 A Collector power dissipation PC 600 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 0.45±0.05 V –60 3 emitter voltage 2SB0644 1.0 Unit 4.5±0.1 7 0. 0.85 Ratings VCBO 2.4±0.2 2.0±0.2 3.5±0.1 Parameter (Ta=25˚C) 1.25±0.05 ■ Absolute Maximum Ratings 1.0 R M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 4.1±0.2 1.5 2.5 1:Base 2:Collector 3:Emitter 2.5 EIAJ:SC–71 M Type Mold Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit ICBO VCB = –20V, IE = 0 –100 nA ICEO VCE = –20V, IB = 0 –1 µA VCBO IC = –10µA, IE = 0 VCEO IC = –2mA, IB = 0 VEBO IE = –10µA, IC = 0 –7 hFE1*1 VCE = –10V, IC = –150mA*2 85 hFE2 VCE = –10V, IC = –500mA*2 40 Collector to emitter saturation voltage VCE(sat) IC = –300mA, IB = –30mA*2 Transition frequency fT VCB = –10V, IE = 10mA, f = 200MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz Collector cutoff current Collector to base 2SB0643 voltage 2SB0644 Collector to emitter 2SB0643 voltage 2SB0644 Emitter to base voltage Forward current transfer ratio –30 V –60 –25 V –50 V 340 90 – 0.35 FE1 V MHz 200 6 15 *2 *1h – 0.6 pF Pulse measurement Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 Note.) The Part numbers in the Parenthesis show conventional part number. 1 2SB0643, 2SB0644 Transistor IC — VCE 700 –700 600 Ta=25˚C –500 400 300 –1mA –100 0 –100 40 60 80 100 120 140 160 0 0 IC/IB=10 –30 –10 –3 Ta=75˚C –1 –8 –12 –16 –20 25˚C – 0.3 –25˚C –100 –30 –10 –3 25˚C Ta=–25˚C –1 75˚C – 0.03 –1 –3 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 Collector current IC (A) fT — IE 200 160 120 80 40 0 1 3 10 –1 –3 300 Ta=75˚C 25˚C –25˚C 200 100 30 Emitter current IE (mA) 100 –0.1 – 0.3 –1 –3 –10 Collector current IC (A) ICEO — Ta 104 IE=0 f=1MHz Ta=25˚C 20 –10 400 0 – 0.01 – 0.03 –10 VCE=–10V 103 ICEO (Ta) ICEO (Ta=25˚C) Collector output capacitance Cob (pF) VCB=–10V Ta=25˚C –8 500 Cob — VCB 24 –6 VCE=–10V Collector current IC (A) 240 –4 600 IC/IB=10 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –2 Base current IB (mA) hFE — IC – 0.3 – 0.1 0 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) –100 –4 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –200 Forward current transfer ratio hFE 20 Ambient temperature Ta (˚C) Transition frequency fT (MHz) –300 0 0 2 –400 –2mA –200 100 –500 –3mA –300 200 –600 –4mA –400 VCE=–10V Ta=25˚C –700 IB=–10mA –9mA –8mA –7mA –6mA –5mA –600 500 IC — I B –800 Collector current IC (mA) –800 Collector current IC (mA) Collector power dissipation PC (mW) PC — Ta 800 16 12 8 102 10 4 0 –1 1 –3 –10 –30 –100 Collector to base voltage VCB (V) 0 40 80 120 160 200 Ambient temperature Ta (˚C) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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