Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473A Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. ■ Absolute Maximum Ratings 13.5±0.5 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –300 V Collector to emitter voltage VCEO –300 V Emitter to base voltage VEBO –5 V Peak collector current ICP –100 mA Collector current IC –70 mA Collector power dissipation PC 750 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Parameter +0.2 +0.2 0.45 –0.1 0.45 –0.1 1.27 1.27 2.3±0.2 ● 5.1±0.2 ■ Features 4.0±0.2 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Symbol Conditions min typ max Unit Collector to emitter voltage VCEO IC = –100µA, IB = 0 –300 V Emitter to base voltage VEBO IE = –1µA, IC = 0 –5 V Forward current transfer ratio hFE * VCE = –10V, IC = –5mA 60 Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = –1mA Transition frequency fT VCB = –10V, IE = 10mA, f = 200MHz 50 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 7 pF *h FE 150 – 0.6 V Rank classification Rank Q hFE 60 ~ 150 1 2SA1767 Transistor PC — Ta IC — VCE –120 –90 IB=–1.0mA 700 600 500 400 300 200 –0.9mA –70 –0.8mA –60 –0.7mA –0.6mA –50 –0.5mA –40 –0.4mA –30 –0.3mA –20 –10 60 80 100 120 140 160 Ambient temperature Ta (˚C) –2 –10 –3 –1 Ta=75˚C –25˚C – 0.03 –1 –3 –10 –6 –10 –12 –30 Ta=75˚C 150 25˚C 100 –25˚C 50 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector current IC (mA) VCE=–120V 3000 16 1000 ICEO (Ta) ICEO (Ta=25˚C) 14 12 10 8 300 100 30 6 10 4 3 2 1 –10 –30 –100 Collector to base voltage VCB (V) –1.2 –1.6 –2.0 0 40 80 120 160 200 100 80 60 40 20 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) ICEO — Ta 10000 IE=0 f=1MHz Ta=25˚C – 0.8 VCB=–10V Ta=25˚C 200 Cob — VCB –3 – 0.4 Base to emitter voltage VBE (V) fT — IE 250 –100 20 0 –1 0 120 Collector current IC (mA) 18 –8 VCE=–10V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –30 – 0.01 – 0.1 – 0.3 –4 300 IC/IB=10 – 0.1 –40 hFE — IC –100 25˚C –60 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.3 –80 0 0 Transition frequency fT (MHz) 40 –25˚C –0.1mA 0 20 Ta=75˚C –20 –0.2mA 100 25˚C –100 –80 Collector current IC (mA) 800 0 Collector output capacitance Cob (pF) VCE=–10V Ta=25˚C 900 0 2 IC — VBE –100 Collector current IC (mA) Collector power dissipation PC (mW) 1000 240 Ambient temperature Ta (˚C) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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