BZX85B... Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Applications 94 9369 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Junction temperature Storage temperature range Test Conditions l=4mm, TL=25°C Type Symbol PV Tj Tstg Value 1.3 175 –65...+175 Unit W °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 110 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Document Number 85607 Rev. 3, 01-Apr-99 Test Conditions IF=200mA Type Symbol VF Min Typ Max 1 Unit V www.vishay.de • FaxBack +1-408-970-5600 1 (5) BZX85B... Vishay Telefunken Type BZX85B... 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 VZnom 1) V 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 IZT mA 80 80 80 60 60 50 45 45 45 35 35 35 25 25 25 20 20 20 15 15 15 10 10 10 8 8 8 8 6 for VZT and rzjT V W 2.64 to 2.76 < 20 2.94 to 3.06 < 20 3.24 to 3.36 < 20 3.52 to 3.68 < 20 3.82 to 3.98 < 15 4.22 to 4.38 < 13 4.60 to 4.80 < 13 5.00 to 5.20 < 10 5.48 to 5.72 <7 6.08 to 6.32 <4 6.66 to 6.94 < 3.5 7.35 to 7.65 <3 8.04 to 8.36 <5 8.92 to 9.28 <5 9.80 to 10.20 <7 10.78 to 11.22 <8 11.76 to 12.24 <9 12.74 to 13.26 < 10 14.70 to 15.30 < 15 15.70 to 16.30 < 15 17.64 to 18.36 < 20 19.60 to 20.40 < 24 21.55 to 22.45 < 25 23.5 to 24.5 < 25 26.4 to 27.6 < 30 29.4 to 30.6 < 30 32.4 to 33.6 < 35 35.3 to 36.7 < 40 38.2 to 39.8 < 50 www.vishay.de • FaxBack +1-408-970-5600 2 (5) rzjk at W < 400 < 400 < 400 < 500 < 500 < 500 < 500 < 500 < 400 < 300 < 300 < 200 < 200 < 200 < 200 < 300 < 350 < 400 < 500 < 500 < 500 < 600 < 600 < 600 < 750 < 1000 < 1000 < 1000 < 1000 IZK mA 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 IR at VR V < 150 1 < 100 1 < 40 1 < 20 1 < 10 1 <3 1 <3 1 <1 1.5 <1 2 <1 3 <1 4 <1 4.5 <1 6.2 <1 6.8 < 0.5 7.5 < 0.5 8.2 < 0.5 9.1 < 0.5 10 < 0.5 11 < 0.5 12 < 0.5 13 < 0.5 15 < 0.5 16 < 0.5 18 < 0.5 20 < 0.5 22 < 0.5 24 < 0.5 27 < 0.5 30 mA TKVZ %/K –0.08 to –0.05 –0.08 to –0.05 –0.08 to –0.05 –0.08 to –0.05 –0.07 to –0.02 –0.07 to –0.01 –0.03 to +0.04 –0.01 to +0.04 0 to +0.045 +0.01 to +0.055 +0.015 to +0.06 +0.02 to +0.065 0.03 to 0.07 0.035 to 0.075 0.04 to 0.08 0.045 to 0.08 0.045 to 0.085 0.05 to 0.085 0.055 to 0.09 0.055 to 0.09 0.06 to 0.09 0.06 to 0.09 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 Document Number 85607 Rev. 3, 01-Apr-99 BZX85B... Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified) 1000 C D – Diode Capacitance ( pF ) Ptot – Total Power Dissipation ( W ) 2.0 1.6 1.2 l=4mm 0.8 l=10mm l=20mm 0.4 0 –50 0 50 100 150 f = 1 MHz Tamb= 25°C 0 10 20 30 40 50 60 VZ – Z-Voltage ( V ) 95 9616 Figure 3. Diode Capacitance vs. Z–Voltage 1000 250 r Z – Differential Z-Resistance ( W ) R thJA – Therm. Resist. Junction / Ambient ( K/W ) 10 200 Figure 1. Total Power Dissipation vs. Ambient Temperature 200 150 l l 100 50 IZ=1mA 2mA 100 5mA 10mA 20mA 10 1 TL=constant 0 0 5 10 15 20 25 1 30 95 9615 l – Lead Length ( mm ) 95 9613 Z thp – Thermal Resistance for Pulse Cond. (K/W) VR = 0V VR = 2V VR = 5V VR = 20V VR = 30V 1 Tamb – Ambient Temperature ( °C ) 95 9612 100 10 100 VZ – Z-Voltage ( V ) Figure 4. Differential Z–Resistance vs. Z–Voltage Figure 2. Thermal Resistance vs. Lead Length 1000 tp/T=0.01 tp/T=0.1 100 tp/T=0.5 RthJA=110K/W DT=Tjmax–Tamb tp/T=0.02 tp/T=0.05 tp/T=0.2 10 Single Pulse iZM=(–VZ+(VZ2+4rzj 1 10–1 100 101 102 DT/Zthp)1/2)/(2rzj) 103 tp – Pulse Length ( ms ) 95 9614 Figure 5. Thermal Response Document Number 85607 Rev. 3, 01-Apr-99 www.vishay.de • FaxBack +1-408-970-5600 3 (5) BZX85B... Vishay Telefunken Dimensions in mm Cathode Identification technical drawings according to DIN specifications 94 9368 ∅ 0.85 max. ∅ 2.5 max. Standard Glass Case 54 B 2 DIN 41880 JEDEC DO 41 Weight max. 0.3 g 26 min. www.vishay.de • FaxBack +1-408-970-5600 4 (5) 4.1 max. 26 min. Document Number 85607 Rev. 3, 01-Apr-99 BZX85B... Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 85607 Rev. 3, 01-Apr-99 www.vishay.de • FaxBack +1-408-970-5600 5 (5)