BZT55C... Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances 96 12009 Applications Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions RthJA 300K/W Type x Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 –65...+175 Unit mW mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Junction ambient on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Document Number 85601 Rev. 3, 01-Apr-99 Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.5 Unit V www.vishay.de • FaxBack +1-408-970-5600 1 (6) BZT55C... Vishay Telefunken Type BZT55C... 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 1) VZnom V 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 IZT for VZT and rzjT mA V 1) W 5 2.28 to 2.56 < 85 5 2.5 to 2.9 < 85 5 2.8 to 3.2 < 90 5 3.1 to 3.5 < 90 5 3.4 to 3.8 < 90 5 3.7 to 4.1 < 90 5 4.0 to 4.6 < 90 5 4.4 to 5.0 < 80 5 4.8 to 5.4 < 60 5 5.2 to 6.0 < 40 5 5.8 to 6.6 < 10 5 6.4 to 7.2 <8 5 7.0 to 7.9 <7 5 7.7 to 8.7 <7 5 8.5 to 9.6 < 10 5 9.4 to 10.6 < 15 5 10.4 to 11.6 < 20 5 11.4 to 12.7 < 20 5 12.4 to 14.1 < 26 5 13.8 to 15.6 < 30 5 15.3 to 17.1 < 40 5 16.8 to 19.1 < 50 5 18.8 to 21.2 < 55 5 20.8 to 23.3 < 55 5 22.8 to 25.6 < 80 5 25.1 to 28.9 < 80 5 28 to 32 < 80 5 31 to 35 < 80 5 34 to 38 < 80 2.5 37 to 41 < 90 2.5 40 to 46 < 90 2.5 44 to 50 < 110 2.5 48 to 54 < 125 2.5 52 to 60 < 135 2.5 58 to 66 < 150 2.5 64 to 72 < 200 2.5 70 to 79 < 250 rzjk at IZK W mA < 600 1 < 600 1 < 600 1 < 600 1 < 600 1 < 600 1 < 600 1 < 600 1 < 550 1 < 450 1 < 200 1 < 150 1 < 50 1 < 50 1 < 50 1 < 70 1 < 70 1 < 90 1 < 110 1 < 110 1 < 170 1 < 170 1 < 220 1 < 220 1 < 220 1 < 220 1 < 220 1 < 220 1 < 220 1 < 500 0.5 < 600 0.5 < 700 0.5 < 700 0.5 < 1000 0.5 < 1000 0.5 < 1000 0.5 < 1500 0.5 IR and IR at mA 2) < 50 < 100 < 10 < 50 <4 < 40 <2 < 40 <2 < 40 <2 < 40 <1 < 20 < 0.5 < 10 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <5 < 0.1 <5 < 0.1 <5 < 0.1 < 10 < 0.1 < 10 < 0.1 < 10 < 0.1 < 10 < 0.1 < 10 mA VR V 1 1 1 1 1 1 1 1 1 1 2 3 5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 TKVZ %/K –0.09 to –0.06 –0.09 to –0.06 –0.08 to –0.05 –0.08 to –0.05 –0.08 to –0.05 –0.08 to –0.05 –0.06 to –0.03 –0.05 to +0.02 –0.02 to +0.02 –0.05 to +0,05 0.03 to 0.06 0.03 to 0.07 0.03 to 0.07 0.03 to 0.08 0.03 to 0.09 0.03 to 0.1 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 x tp/T 100ms, tighter tolerances available on request: BZT55A... ± 1% of VZnom BZT55B... ± 2% of VZnom BZT55F... ± 3% of VZnom 2) at Tj= 150°C www.vishay.de • FaxBack +1-408-970-5600 2 (6) Document Number 85601 Rev. 3, 01-Apr-99 BZT55C... Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified) 1.3 VZtn=VZt/VZ(25°C) VZtn – Relative Voltage Change Ptot – Total Power Dissipation ( mW ) 600 500 400 300 200 100 1.2 80 120 160 IZ=5mA 10 DVZ – Voltage Change ( mV ) Tj = 25°C 100 1 95 9598 5 10 15 20 10–4/K 10–4/K 10–4/K 0.8 –60 0 60 120 180 240 Tj – Junction Temperature ( °C ) Figure 3. Typical Change of Working Voltage vs. Junction Temperature 1000 0 4 2 –4 95 9599 Figure 1. Total Power Dissipation vs. Ambient Temperature 10–4/K 10–4/K 0.9 200 Tamb – Ambient Temperature ( °C ) 95 9602 8 6 0 –2 10–4/K 1.0 25 VZ – Z-Voltage ( V ) TK VZ – Temperature Coefficient of VZ ( 10 –4 /K ) 40 10–4/K 1.1 0 0 TKVZ=10 15 10 5 IZ=5mA 0 –5 0 10 Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C 20 30 40 50 VZ – Z-Voltage ( V ) 95 9600 Figure 4. Temperature Coefficient of Vz vs. Z–Voltage C D – Diode Capacitance ( pF ) 200 150 VR = 2V Tj = 25°C 100 50 0 0 95 9601 5 10 15 20 25 VZ – Z-Voltage ( V ) Figure 5. Diode Capacitance vs. Z–Voltage Document Number 85601 Rev. 3, 01-Apr-99 www.vishay.de • FaxBack +1-408-970-5600 3 (6) BZT55C... 100 50 10 40 IZ – Z-Current ( mA ) IF – Forward Current ( mA ) Vishay Telefunken Tj = 25°C 1 0.1 Ptot=500mW Tamb=25°C 30 20 10 0.01 0 0.001 0 0.2 0.4 0.6 0.8 1.0 15 VF – Forward Voltage ( V ) 95 9605 35 30 Figure 8. Z–Current vs. Z–Voltage 100 r Z – Differential Z-Resistance ( W ) 1000 80 IZ – Z-Current ( mA ) 25 VZ – Z-Voltage ( V ) Figure 6. Forward Current vs. Forward Voltage Ptot=500mW Tamb=25°C 60 40 20 IZ=1mA 100 5mA 10 10mA 0 Tj = 25°C 1 0 4 8 12 16 20 0 VZ – Z-Voltage ( V ) 95 9604 5 10 15 20 25 VZ – Z-Voltage ( V ) 95 9606 Figure 7. Z–Current vs. Z–Voltage Z thp – Thermal Resistance for Pulse Cond. (K/W) 20 95 9607 Figure 9. Differential Z–Resistance vs. Z–Voltage 1000 tp/T=0.5 100 tp/T=0.2 Single Pulse RthJA=300K/W DT=Tjmax–Tamb 10 tp/T=0.01 tp/T=0.1 tp/T=0.02 iZM=(–VZ+(VZ2+4rzj tp/T=0.05 1 10–1 100 101 DT/Zthp)1/2)/(2rzj) 102 tp – Pulse Length ( ms ) 95 9603 Figure 10. Thermal Response www.vishay.de • FaxBack +1-408-970-5600 4 (6) Document Number 85601 Rev. 3, 01-Apr-99 BZT55C... Vishay Telefunken Dimensions in mm 96 12071 Document Number 85601 Rev. 3, 01-Apr-99 www.vishay.de • FaxBack +1-408-970-5600 5 (6) BZT55C... Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 6 (6) Document Number 85601 Rev. 3, 01-Apr-99