Bulletin I27149 01/03 EMP25P12B PIM+ EMP Features: Package: Power Module: • • • • NPT IGBTs 25A, 1200V 10us Short Circuit capability Square RBSOA Low Vce(on) (2.28Vtyp @ 25A, 25°C) Positive Vce(on) temperature coefficient Gen III HexFred Technology Low diode VF (1.76Vtyp @ 25A, 25°C) Soft reverse recovery 4mΩ sensing resistors on all phase outputs and DCbus minus rail Thermal coefficient < 50ppm/°C EMP – Inverter (EconoPack 2 outline compatible) Power Module schematic: Description The EMP25P12B is a Power Integrated Module for Motor Driver applications with embedded sensing resistors on all three-phase output currents. Each sensing resistor’s head is directly bonded to an external pin to reduce parasitic effects and achieve high accuracy on feedback voltages. Since their thermal coefficient is very low, no value compensation is required across the complete operating temperature range. The device comes in the EMP package, fully compatible in length, width and height with EconoPack 2 outline. Three phase inverter with current sensing resistors on all output phases and thermistor Pins Mapping www.irf.com 1 EMP25P12B I27149 01/03 Pins Mapping Symbol DC + Lead Description DC Bus plus input signal DC - DC Bus minus input signal (internally connected to COM) Th + Thermal sensor positive input Th - Thermal sensor negative input (internally connected to COM) Sh + DC Bus minus series shunt positive input (Kelvin point) Sh - DC Bus minus series shunt negative input (Kelvin point) G1/2/3 Gate connections for high side IGBTs E1/2/3 Emitter connections for high side IGBTs (Kelvin points) R1/2/3 + Output current sensing resistor positive input (IGBTs emitters 1/2/3 side, Kelvin points) R1/2/3 - Output current sensing resistor negative input (Motor side, Kelvin points) G4/5/6 Gate connections for low side IGBTs E4/5/6 Emitter connections for low side IGBTs (Kelvin points) Absolute Maximum Ratings (TC=25ºC) Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to VDC-, all currents are defined positive into any lead. Thermal Resistance and Power Dissipation ratings are measured at still air conditions. Symbol Inverter Power Module Parameter Definition Min. Max. VDC DC Bus Voltage 0 1000 VCES Collector Emitter Voltage 0 1200 IC @ 100C IGBTs continuous collector current (TC = 100 ºC, fig. 1) 25 IC @ 25C IGBTs continuous collector current (TC = 25 ºC,fig 1) 50 ICM Pulsed Collector Current (Fig. 3, Fig. CT.5) 100 IF @ 100C Diode Continuous Forward Current (TC = 100 ºC) 25 IF @ 25C Diode Continuous Forward Current (TC = 25 ºC) 50 IFM Diode Maximum Forward Current 100 VGE Gate to Emitter Voltage PD @ 25°C Power Dissipation (One transistor) 192 PD @ 100°C Power Dissipation (One transistor, TC = 100 ºC) 77 MT Mounting Torque 3.5 -20 +20 TJ Operating Junction Temperature -40 +150 TSTG Storage Temperature Range -40 +125 Vc-iso Isolation Voltage to Base Copper Plate -2500 +2500 www.irf.com Units V A V W Nm ºC V 2 EMP25P12B I27149 01/03 Electrical Characteristics: For proper operation the device should be used within the recommended conditions. TJ = 25°C (unless otherwise specified) Symbol Parameter Definition V(BR)CES Collector To Emitter Breakdown Voltage ∆V(BR)CES / ∆T Temperature Coeff. of Breakdown Voltage VCE(on) Min. Gate Threshold Voltage ∆VGE(th) / ∆Tj Temp. Coeff. of Threshold Voltage gfe Forward Trasconductance Max. 1200 4.0 V/ºC 2.28 2.48 3.2 3.65 2.74 3.10 5.0 6.0 -1.2 14.8 Units V +1.2 Collector To Emitter Saturation Voltage VGE(th) Typ. 16.9 19.0 V V Zero Gate Voltage Collector Current 325 675 2.06 1.87 2.18 VGE = 0V, IC = 1mA (25 - 125 ºC) IC = 25A, VGE = 15V 5, 6 IC = 50A, VGE = 15V 7, 9 VCE = VGE, IC = 250µA mV/ºC VCE = VGE, IC = 1mA (25 - 125 ºC) S VCE = 50V, IC = 25A, PW = 80µs µA VGE = 0V, VCE = 1200V, TJ = 150 ºC 8 IC = 25A, TJ = 125 ºC 8 IRM Diode Reverse Leakage Current 20 µA VR = 1200V, TJ = 25 ºC IGES Gate To Emitter Leakage Current ±100 nA VGE =± 20V R1/2/3 Sensing Resistors 3.96 4 4.04 Rsh DC bus minus series shunt resistor 3.96 4 4.04 The package chosen is mechanically compatible with the well known EconoPack outline, Also the height of the plastic cylindrical nuts for the external PCB positioned on www.irf.com V IC = 25A Diode Forward Voltage Drop The EMP module contains six IGBTs and HexFreds Diodes in a standard inverter configuration. IGBTs used are the new NPT 1200V-25A (current rating measured at 100C°), generation V from International Rectifier; the HexFred diodes have been designed specifically as pair elements for these power transistors. Thanks to the new design and technological realization, these devices do not need any negative gate voltage for their complete turn off; moreover the tail effect is also substantially reduced compared to competitive devices of the same family. This feature tremendously simplifies the gate driving stage. Another innovative feature in this type of power modules is the presence of sensing resistors in the three output phases, for precise motor current sensing and short circuit protections, as well as another resistor of the same value in the DC bus minus line, needed only for device protections purposes. A complete schematic of the EMP module is shown on page 1 where all sensing resistors have been clearly evidenced, a thermal sensor with negative temperature coefficient is also embedded in the device structure. 12 VGE = 0V, VCE = 1200V, TJ = 125 ºC VFM General Description 10, 11 VGE = 0V, VCE = 1200V 2000 1.76 Fig. VGE = 0V, IC = 250µA IC = 25A, VGE = 15V, TJ = 125 ºC 250 ICES Test Conditions mΩ its top is the same as the EconoPack II, so that, with the only re-layout of the main motherboard, this module can fit into the same mechanical fixings of the standard EconoPack II package thus speeding up the device evaluation in an already existing driver. An important feature of this new device is the presence of Kelvin connections for all feedback and command signals between the board and the module with the advantage of having all emitter and resistor sensing independent from the main power path. The final benefit is that all low power signal from/to the controlling board are unaffected by parasitic inductances or resistances inevitably present in the module power layout. The new package outline is shown on bottom of page 1. Notice that because of high current spikes on those inputs the DC bus power pins are doubled in size compared to the other power pins. Module technology uses the standard and well know DBC (Direct Bondable Copper): over a thick Copper base an allumina (Al2O3) substrate with a 300µm copper foil on both side is placed and IGBTs and Diodes dies are directly soldered, through screen printing process. These dies are then bonded with a 15 mils aluminum wire for power and signal connections. All components are then completely covered by a silicone gel for mechanical protection and electrical isolation purposes. 3 EMP25P12B I27149 01/03 Switching Characteristics: For proper operation the device should be used within the recommended conditions. TJ = 25°C (unless otherwise specified) Symbol Parameter Definition Min Typ Max Units Test Conditions IC = 25A Fig. Qg Total Gate Charge (turn on) 169 254 Qge Gate – Emitter Charge (turn on) 19 29 Qgc Gate – Collector Charge (turn on) 82 123 VGE = 15V Eon Turn on Switching Loss 1.9 3.6 IC = 25A, VCC = 600V, TJ = 25 ºC CT4 Eoff Turn off Switching Loss 1.3 2.0 VGE = 15V, RG =20Ω, L = 200µH WF1 Etot Total Switching Loss 3.2 5.6 Tail and Diode Rev. Recovery included WF2 Eon Turn on Switching Loss 2.7 4.6 IC = 25A, VCC = 600V, TJ = 125 ºC Eoff Turn off Switching Loss 2.0 2.3 Etot Total Switching Loss 4.7 6.9 13, 15 CT4 WF1 WF2 td (on) Turn on delay time 192 210 Tr Rise time 33 td (off) Turn off delay time 213 227 Tf Fall time 210 379 Cies Input Capacitance 2200 Coes Output Capacitance 210 Cres Reverse Transfer Capacitance 85 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area EREC Diode reverse recovery energy 1820 Trr Diode reverse recovery time 300 Irr Peak reverse recovery current 25 RthJC_T nC mJ mJ VCC = 600V VGE = 15V, RG =20Ω, L = 200µH Tail and Diode Rev. Recovery included IC = 25A, VCC = 600V, TJ = 125 ºC 49 ns VGE = 15V, RG =20Ω, L = 200µH 23 CT1 14,16 CT4 WF1 WF2 VCC = 30V PF VGE = 0V 22 f = 1MHz TJ = 150 ºC, I C =100A, VGE = 15V to 0V VCC = 1000V, Vp = 1200V, RG = 5Ω 4 CT2 TJ = 150 ºC, VGE = 15V to 0V CT3 VCC = 1000V, Vp= 1200V, RG = 5Ω WF4 µJ TJ = 125 ºC ns IF= 25A, VCC = 600V, 32 A VGE = 15V, RG =20Ω, L = 200µH 17,18 19,20 21 CT4 WF3 Each IGBT to copper plate thermal resistance 0.65 ºC/W RthJC_D Each Diode to copper plate thermal resistance 1.05 ºC/W RthC-H Module copper plate to heat sink thermal resistance. Silicon grease applied = 0.1mm 0.03 ºC/W www.irf.com FULL SQUARE 10 µs 2400 24 4 EMP25P12B I27149 01/03 Fig. 1 – Maximum DC collector Current vs. case temperature Fig. 2 – Power Dissipation vs. Case Temperature TC = (ºC) TC = (ºC) Fig. 3 – Forward SOA TC = 25ºC; Tj ≤ 150ºC Fig. 4 – Reverse Bias SOA Tj = 150ºC, VGE = 15V VCE = (V) VCE = (V) www.irf.com 5 EMP25P12B I27149 01/03 Fig. 5 – Typical IGBT Output Characteristics Tj = - 40ºC; tp = 300µs Fig. 6 – Typical IGBT Output Characteristics Tj = 25ºC; tp = 300µs VCE = (V) VCE = (V) Fig. 7 – Typical IGBT Output Characteristics Tj = 125ºC; tp = 300µs Fig. 8 – Typical Diode Forward Characteristics tp = 300µs VCE = (V) VF = (V) www.irf.com 6 EMP25P12B I27149 01/03 Fig. 9 – Typical VCE vs. VGE Tj = - 40ºC Fig. 10 – Typical VCE vs. VGE Tj = 25ºC VGE = (V) VGE = (V) Fig. 11 – Typical VCE vs. VGE Tj = 125ºC Fig. 12 – Typical Transfer Characteristics VCE = 20V; tp = 20µs VGE = (V) www.irf.com VGE = (V) 7 EMP25P12B I27149 01/03 Fig. 13 – Typical Energy Loss vs. IC Tj = 125ºC; L = 200µH; VCE = 600V; Rg = 10Ω; VGE = 15V Fig. 14 – Typical Switching Time vs. IC Tj = 125ºC; L = 200µH; VCE = 600V; Rg = 10Ω; VGE = 15V IC = (A) IC = (A) Fig. 15 – Typical Energy Loss vs. Rg Tj = 125ºC; L = 200µH; VCE = 600V; ICE = 25A; VGE = 15V Fig. 16 – Typical Switching Time vs. Rg Tj = 125ºC; L = 200µH; VCE = 600V; ICE = 25A; VGE = 15V Rg = (Ω) Rg = (Ω) www.irf.com 8 EMP25P12B I27149 01/03 Fig. 17 – Typical Diode IRR vs. IF Tj = 125ºC Fig. 18 – Typical Diode IRR vs. Rg IF = 25A; Tj = 125ºC IF = (A) Rg = (Ω) Fig. 19 – Typical Diode IRR vs. dIF/dt VDC = 600V; VGE = 15V; IF = 25A; Tj = 125ºC Fig. 20 – Typical Diode QRR VDC = 600V; VGE = 15V; Tj = 125ºC dIF/dt (A/µs) dIF/dt (A/µs) www.irf.com 9 EMP25P12B I27149 01/03 Fig. 21 – Typical Diode EREC vs. IF Tj = 125ºC Fig. 22 – Typical Capacitance vs. VCE VGE = 0V; f = 1MHz IF = (A) VCE = (V) Fig. 23 – Typical Gate Charge vs. VGE IC = 25A; L = 600µH; VCC = 600V QG = (nC) www.irf.com Fig. TF1 – Thermal Sensor Resistance vs. Base-Plate Temperature TC (ºC) 10 EMP25P12B I27149 01/03 Fig. 24 – Normalized Transient Impedance, Junction-to-copper plate t1, Rectangular Pulse Duration (sec) www.irf.com 11 EMP25P12B www.irf.com I27149 01/03 12 EMP25P12B www.irf.com I27149 01/03 13 EMP25P12B I27149 01/03 EMP family part number identification EMP 25 P 12 B 1 2 3 4 5 1- Package type 2- Current rating 3- Current sensing configuration P= Q= E= F= G= on 3 phases on 2 phases on 3 emitters on 2 emitters on 1 emitter A= B= C= D= M= Bridge brake Inverter Inverter + brake BBI (Bridge Brake Inverter) Matrix 4- Voltage code: Code x 100 = Vrrm 5- Circuit configuration code www.irf.com 14 EMP25P12B I27149 01/03 EMP25P12B case outline and dimensions Data and specifications subject to change without notice This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR’s Web Site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 3252 7105 TAC Fax: (310) 252 7309 Visit us at www.irf.com for sales contact information 01/03 Data and specifications subject to change without notice. Sales Offices, Agents and Distributors in Major Cities Throughout the World. © 2003 International Rectifier - Printed in Italy 01-13 - Rev. 1.9 www.irf.com 15