IRF AUIRGP50B60PD1

PD - 96306A
AUTOMOTIVE GRADE
AUIRGP50B60PD1
AUIRGP50B60PD1E
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
VCES = 600V
VCE(on) typ. = 2.00V
@ VGE = 15V IC = 33A
C
Applications
• Automotive HEV and EV
• PFC and ZVS SMPS Circuits
Equivalent MOSFET
Parameters
RCE(on) typ. = 61mΩ
ID (FET equivalent) = 50A
G
Features
• Low VCE(ON) NPT Technology, Positive Temperature
Coefficient
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Lead-Free, RoHS Compliant
• Automotive Qualified *
E
n-channel
G
Benefits
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150kHz
Absolute Maximum Ratings
C
E
G
E
TO-247AD
AUIRGP50B60PD1E
TO-247AC
AUIRGP50B60PD1
G
Gate
C
C
Collector
E
Emitter
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current
600
75
V
IC @ TC = 100°C
Continuous Collector Current
45
ICM
150
ILM
Pulse Collector Current (Ref. Fig. C.T.4)
Clamped Inductive Load Current
IF @ TC = 25°C
Diode Continous Forward Current
40
IF @ TC = 100°C
IFRM
Diode Continous Forward Current
Maximum Repetitive Forward Current
VGE
Gate-to-Emitter Voltage
±20
V
PD @ TC = 25°C
Maximum Power Dissipation
390
W
PD @ TC = 100°C
Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
h
d
150
A
15
e
60
156
-55 to +150
Soldering Temperature for 10 sec.
°C
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Min.
Typ.
Max.
Units
RθJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
Parameter
–––
–––
0.32
°C/W
RθJC (Diode)
Thermal Resistance Junction-to-Case-(each Diode)
–––
–––
1.7
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
0.24
–––
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
–––
40
Weight
–––
6.0 (0.21)
–––
g (oz)
*Qualification standards can be found at http://www.irf.com/
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1
11/02/10
AUIRGP50B60PD1/AUIRGP50B60PD1E
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
600
—
Temperature Coeff. of Breakdown Voltage
—
0.31
—
Internal Gate Resistance
—
1.7
—
—
2.00
2.35
—
2.45
2.85
V(BR)CES
Collector-to-Emitter Breakdown Voltage
∆V(BR)CES/∆TJ
RG
VCE(on)
Collector-to-Emitter Saturation Voltage
Max. Units
—
V
Conditions
Ref.Fig
VGE = 0V, IC = 500µA
V/°C VGE = 0V, IC = 1mA (25°C-125°C)
Ω
1MHz, Open Collector
IC = 33A, VGE = 15V
V
IC = 50A, VGE = 15V
4, 5,6,8,9
—
2.60
2.95
IC = 33A, VGE = 15V, TJ = 125°C
—
3.20
3.60
IC = 50A, VGE = 15V, TJ = 125°C
VGE(th)
Gate Threshold Voltage
3.0
4.0
5.0
∆VGE(th)/∆TJ
Threshold Voltage temp. coefficient
—
-10
—
gfe
ICES
Forward Transconductance
—
41
—
Collector-to-Emitter Leakage Current
—
5.0
500
µA
VGE = 0V, VCE = 600V
—
1.0
—
mA
VGE = 0V, VCE = 600V, TJ = 125°C
—
1.30
1.70
V
—
1.20
1.60
—
—
±100
VFM
IGES
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
V
IC = 250µA
7,8,9
mV/°C VCE = VGE, IC = 1.0mA
S VCE = 50V, IC = 33A, PW = 80µs
IF = 15A, VGE = 0V
10
IF = 15A, VGE = 0V, TJ = 125°C
nA
VGE = ±20V, VCE = 0V
Static or Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Qg
Total Gate Charge (turn-on)
Parameter
—
205
Max. Units
308
Qgc
Gate-to-Collector Charge (turn-on)
—
70
105
Conditions
nC
Qge
Gate-to-Emitter Charge (turn-on)
—
30
45
Turn-On Switching Loss
—
255
305
Eoff
Turn-Off Switching Loss
—
375
445
Etotal
Total Switching Loss
—
630
750
td(on)
Turn-On delay time
—
30
40
tr
Rise time
—
10
15
td(off)
Turn-Off delay time
—
130
150
tf
Fall time
—
11
15
Eon
Turn-On Switching Loss
—
580
700
Eoff
Turn-Off Switching Loss
—
480
550
Etotal
Total Switching Loss
—
1060
1250
td(on)
Turn-On delay time
—
26
35
tr
Rise time
—
13
20
td(off)
Turn-Off delay time
—
146
165
tf
Fall time
—
15
20
Cies
Input Capacitance
—
3648
—
VGE = 0V
Coes
Output Capacitance
—
322
—
VCC = 30V
Cres
Reverse Transfer Capacitance
Effective Output Capacitance (Time Related)
—
56
—
Coes eff.
—
215
—
Coes eff. (ER)
Effective Output Capacitance (Energy Related)
—
163
—
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
trr
Diode Reverse Recovery Time
—
g
17
VCC = 400V
Eon
g
Ref.Fig
IC = 33A
CT1
VGE = 15V
IC = 33A, VCC = 390V
µJ
CT3
VGE = +15V, RG = 3.3Ω, L = 200µH
TJ = 25°C
f
IC = 33A, VCC = 390V
ns
CT3
VGE = +15V, RG = 3.3Ω, L = 200µH
TJ = 25°C
f
IC = 33A, VCC = 390V
µJ
CT3
VGE = +15V, RG = 3.3Ω, L = 200µH
TJ = 125°C
f
11,13
WF1,WF2
IC = 33A, VCC = 390V
ns
CT3
VGE = +15V, RG = 3.3Ω, L = 200µH
f
TJ = 125°C
pF
12,14
WF1,WF2
16
f = 1Mhz
VGE = 0V, VCE = 0V to 480V
15
TJ = 150°C, IC = 150A
3
VCC = 480V, Vp =600V
CT2
Rg = 22Ω, VGE = +15V to 0V
Qrr
Diode Reverse Recovery Charge
Irr
Peak Reverse Recovery Current
42
60
—
74
120
—
80
180
—
220
600
—
4.0
6.0
—
6.5
10
ns
nC
TJ = 25°C
IF = 15A, VR = 200V,
19
TJ = 125°C
di/dt = 200A/µs
IF = 15A, VR = 200V,
21
TJ = 25°C
di/dt = 200A/µs
IF = 15A, VR = 200V,
19,20,21,22
TJ = 125°C
di/dt = 200A/µs
TJ = 25°C
TJ = 125°C
A
CT5
Notes:
 RCE(on) typ. = equivalent on-resistance = V CE(on) typ./ IC, where VCE(on) typ.= 2.00V and I C =33A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for
applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
‚ VCC = 80% (VCES), VGE = 15V, L = 28 µH, RG = 22 Ω.
ƒ Pulse width limited by max. junction temperature.
„ Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
… C oes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES. C oes eff.(ER) is a fixed capacitance that stores the
same energy as C oes while VCE is rising from 0 to 80% VCES.
† Calculated continuous current based on maximum allowable junction temperature. Package current limit is 60A. Note that current limitations arising from heating of
the device leads may occur with some lead mounting arrangements.
2
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AUIRGP50B60PD1/AUIRGP50B60PD1E
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
††
Comments: This part number(s) passed Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by extension of the higher Automotive level.
TO-247AC
N/A
TO-247AD
Class M4 (+/-450V)
AEC-Q101-002
ESD
Human Body Model
Class H2 (+/-4500V)
AEC-Q101-001
Charged Device Model
Class C5 (+/-1100V)
AEC-Q101-005
RoHS Compliant
†
Yes
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRGP50B60PD1/AUIRGP50B60PD1E
90
450
400
70
350
60
300
50
Ptot (W)
IC (A)
80
40
250
200
30
150
20
100
10
50
0
0
0
20
40
60
80
0
100 120 140 160
20
40
60
80
100 120 140 160
T C (°C)
T C (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
200
1000
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
180
160
140
IC A)
ICE (A)
100
10
120
100
80
60
40
20
0
1
10
100
0
1000
1
2
3
4
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE =15V
7
8
9
10
200
160
140
160
140
ICE (A)
120
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
180
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
180
ICE (A)
6
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
200
100
80
120
100
80
60
60
40
40
20
20
0
0
0
1
2
3
4
5
6
7
8
9
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
4
5
VCE (V)
VCE (V)
10
0
1
2
3
4
5
6
7
8
9
10
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
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AUIRGP50B60PD1/AUIRGP50B60PD1E
900
10
800
T J = 25°C
9
700
T J = 125°C
8
7
VCE (V)
ICE (A)
600
500
400
300
ICE = 15A
6
ICE = 33A
5
ICE = 50A
4
200
TJ = 125°C
3
100
T J = 25°C
2
0
1
0
5
10
15
20
0
5
10
VGE (V)
15
20
VGE (V)
Fig. 7 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
Fig. 8 - Typical VCE vs. VGE
TJ = 25°C
10
100
InstantaneousF
orw
ardC
urrent -I (A
)
9
F
8
VCE (V)
7
ICE = 15A
6
ICE = 33A
5
ICE = 50A
4
3
10
TJ = 150°C
TJ = 125°C
TJ =
25°C
2
1
0
5
10
15
1
0.8
20
1.2
1.6
2.0
2.4
Forward Voltage Drop - V FM (V)
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = 125°C
Fig. 10 - Typ. Diode Forward Characteristics
tp = 80µs
1200
1000
Swiching Time (ns)
1000
Energy (µJ)
800
EON
600
EOFF
400
td OFF
100
tF
tdON
200
tR
0
10
0
10
20
30
40
50
60
IC (A)
Fig. 11 - Typ. Energy Loss vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
www.irf.com
0
10
20
30
40
50
60
IC (A)
Fig. 12 - Typ. Switching Time vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
5
AUIRGP50B60PD1/AUIRGP50B60PD1E
1000
1000
900
EON
700
EOFF
600
tdOFF
Swiching Time (ns)
Energy (µJ)
800
500
100
td ON
tF
400
tR
10
300
0
5
10
15
20
0
25
5
10
15
20
25
RG ( Ω)
RG ( Ω)
Fig. 13 - Typ. Energy Loss vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 14 - Typ. Switching Time vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
40
10000
Cies
Capacitance (pF)
Eoes (µJ)
30
20
1000
Coes
100
Cres
10
0
10
0
100
200
300
400
500
600
700
0
20
VCE (V)
40
60
80
100
VCE (V)
Fig. 16- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 15- Typ. Output Capacitance
Stored Energy vs. VCE
16
1.4
14
Normalized V CE(on) (V)
400V
12
VGE (V)
10
8
6
4
1.2
1.0
2
0
0.8
0
50
100
150
200
250
Q G , Total Gate Charge (nC)
Fig. 17 - Typical Gate Charge vs. VGE
ICE = 33A
6
-50
0
50
100
150
200
T J (°C)
Fig. 18 - Normalized Typ. VCE(on)
vs. Junction Temperature
IC = 33A, VGE= 15V
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AUIRGP50B60PD1/AUIRGP50B60PD1E
100
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
80
I IRRM - (A)
t rr - (ns)
I F = 30A
I F = 30A
60
I F = 15A
IF = 15A
10
I F = 5.0A
40
I F = 5.0A
20
100
di f /dt - (A/µs)
1
100
1000
Fig. 19 - Typical Reverse Recovery vs. dif/dt
di f /dt - (A/µs)
1000
Fig. 20 - Typical Recovery Current vs. dif/dt
800
1000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
di(rec)M/dt - (A/µs)
600
Q RR - (nC)
IF = 30A
400
I F = 15A
IF = 5.0A
I F = 5.0A
I F = 15A
I F = 30A
200
0
100
di f /dt - (A/µs)
1000
Fig. 21 - Typical Stored Charge vs. dif/dt
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100
100
di f /dt - (A/µs)
1000
Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
7
AUIRGP50B60PD1/AUIRGP50B60PD1E
Thermal Response ( Z thJC )
1
D = 0.50
0.1
0.20
0.10
R1
R1
0.05
0.01
τJ
0.01
0.02
τJ
τ1
τC
τ2
τ1
τ
Ri (°C/W) τi (sec)
0.157
0.000346
0.163
τ2
4.28
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
R2
R2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
0.05
τJ
0.01
0.02
R1
R1
τJ
τ1
τ1
R2
R2
τ2
τ2
Ci= τi/Ri
Ci i/Ri
0.01
R3
R3
τ3
τC
τ
τ3
Ri (°C/W) τi (sec)
0.363
0.000112
0.864
0.473
0.001184
0.032264
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
8
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AUIRGP50B60PD1/AUIRGP50B60PD1E
L
L
VCC
DUT
0
80 V
DUT
480V
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
L
PFC diode
R=
DUT /
DRIVER
VCC
DUT
Rg
VCC
ICM
VCC
Rg
Fig.C.T.4 - Resistive Load Circuit
Fig.C.T.3 - Switching Loss Circuit
REVERSE RECOVERY CIRCUIT
VR = 200V
0.01 Ω
L = 70µH
D.U.T.
dif/dt
ADJUST
D
G
IRFP250
S
Fig. C.T.5 - Reverse Recovery Parameter
Test Circuit
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9
AUIRGP50B60PD1/AUIRGP50B60PD1E
550
50
500
40
80
90% ICE
90% ICE
300
30
250
200
20
5% V CE
150
100
50
-50
Eoff
0.00
30
5% V CE
100
10% ICE
20
10
0
-10
0.40
0.20
60
40
150
0
70
50
200
50
0
TEST CURRENT
250
10
5% ICE
tr
V CE (V)
VCE (V)
400
300
ICE (A)
tf
350
-100
-0.20
90
350
450
400
450
ICE (A)
60
600
Eon Loss
-50
-0.10
0.00
Time (µs)
0.10
0
-10
0.20
Time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 25°C using Fig. CT.3
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 25°C using Fig. CT.3
3
trr
IF
tb
ta
0
2
Q rr
I RRM
4
0.5 I RRM
di(rec)M/dt
5
0.75 I RRM
1
di f /dt
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M /dt - Peak rate of change of
current during tb portion of trr
Fig. WF3 - Reverse Recovery Waveform and
Definitions
10
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AUIRGP50B60PD1/AUIRGP50B60PD1E
TO-247AC Package Outline
Dimensions are shown in milimeters (inches)
TO-247AC Part Marking Information
Part Number
P50B60PD1
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRGP50B60PD1/AUIRGP50B60PD1E
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
Part Number
50B60PD1E
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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AUIRGP50B60PD1/AUIRGP50B60PD1E
Ordering Information
Base part number
AUIRGP50B60PD1
AUIRGP50B60PD1E
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Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Tube
Tube
Complete Part Number
Quantity
25
25
AUIRGP50B60PD1
AUIRGP50B60PD1E
13
AUIRGP50B60PD1/AUIRGP50B60PD1E
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make
corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any
product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions
of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty.
Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by
government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications
using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating
safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied
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restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express
and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible
or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where
personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer
shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims,
costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated
with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically
designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military specifications. Buyers
acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer’s risk, and that
they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated
by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree
that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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