IRF EMP50P12B

Bulletin I27148 08/06
EMP50P12B
PIM+
Package:
EMP Features:
Power Module:
•
•
•
•
NPT IGBTs 50A, 1200V
10us Short Circuit capability
Square RBSOA
Low Vce(on) (2.15Vtyp @ 50A, 25°C)
Positive Vce(on) temperature coefficient
Gen III HexFred Technology
Low diode VF (1.78Vtyp @ 50A, 25°C)
Soft reverse recovery
EMP – Inverter (EconoPack 2 outline compatible)
2mΩ sensing resistors on all phase outputs and DCbus
minus rail
T/C < 50ppm/°C
Power Module schematic:
Description
The EMP50P12B is a Power Integrated Module for Motor
Driver applications with embedded sensing resistors on all
three-phase output currents.
Each sensing resistor’s head is directly bonded to an external
pin to reduce parasitic effects and achieve high accuracy on
feedback voltages.
Since their thermal coefficient is very low, no value
compensation is required across the complete operating
temperature range.
TM
The device comes in the EMP package, fully compatible in
length, width and height with EconoPack 2 outline.
Three phase inverter with current sensing
resistors on all output phases
Power module frame pins mapping
www.irf.com
1
EMP50P12B
I27148 08/06
Pins mapping
Symbol
Lead Description
DC IN+
DC INDC +
DC Th +
Th Sh +
Sh G1/2/3
E1/2/3
R1/2/3 +
R1/2/3 G4/5/6
E4/5/6
OUT1/2/3
DC Bus plus power input pin
DC Bus minus power input pin
DC Bus plus signal connection (Kelvin point)
DC Bus minus signal connection (Kelvin point)
Thermal sensor positive input
Thermal sensor negative input
DC Bus minus series shunt positive input (Kelvin point)
DC Bus minus series shunt negative input (Kelvin point)
Gate connections for high side IGBTs
Emitter connections for high side IGBTs (Kelvin points)
Output current sensing resistor positive input (IGBTs emitters 1/2/3 side, Kelvin points)
Output current sensing resistor negative input (Motor side, Kelvin points)
Gate connections for low side IGBTs
Emitter connections for low side IGBTs (Kelvin points)
Three phase power output pins
Absolute Maximum Ratings (TC=25ºC)
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
All voltage parameters are absolute voltages referenced to VDC-, all currents are defined positive into any lead.
Thermal Resistance and Power Dissipation ratings are measured at still air conditions.
Symbol
Inverter
Power
Module
Parameter Definition
Min.
Max.
VDC
DC Bus Voltage
0
1000
VCES
Collector Emitter Voltage
0
1200
IC @ 100C
IGBTs continuous collector current (TC = 100 ºC)
50
IC @ 25C
IGBTs continuous collector current (TC = 25 ºC)
100
ICM
Pulsed Collector Current (Fig. 3, Fig. CT.5)
200
IF @ 100C
Diode Continuous Forward Current (TC = 100 ºC)
50
IF @ 25C
Diode Continuous Forward Current (TC = 25 ºC)
100
IFM
Diode Maximum Forward Current
200
VGE
Gate to Emitter Voltage
PD @ 25°C
Power Dissipation (One transistor)
354
PD @ 100°C
Power Dissipation (One transistor, TC = 100 ºC)
142
MT
Mounting Torque
3.5
TJ
Operating Junction Temperature
-40
+150
TSTG
Storage Temperature Range
-40
+125
Vc-iso
Isolation Voltage to Base Copper Plate
-2500
+2500
www.irf.com
-20
+20
Units
V
A
V
W
Nm
ºC
V
2
EMP50P12B
I27148 08/06
Electrical Characteristics:
For proper operation the device should be used within the recommended conditions.
TJ = 25°C (unless otherwise specified)
Symbol
Parameter Definition
V(BR)CES
Collector To Emitter Breakdown Voltage
∆V(BR)CES / ∆T
Temperature Coeff. of Breakdown Voltage
VCE(on)
Min.
Gate Threshold Voltage
∆VGE(th) / ∆Tj
Temp. Coeff. of Threshold Voltage
gfe
Forward Trasconductance
Max.
1200
4.4
V/ºC
2.15
2.55
2.70
3.78
2.45
3.22
4.7
5.5
-1.2
29
Units
V
+1.2
Collector To Emitter Saturation Voltage
VGE(th)
Typ.
33
38
V
V
Zero Gate Voltage Collector Current
650
1350
2.1
1.90
2.22
VGE = 0V, IC = 1mA (25 - 125 ºC)
IC = 50A, VGE = 15V
5, 6
IC = 100A, VGE = 15V
7, 9
VCE = VGE, IC = 250µA
mV/ºC
VCE = VGE, IC = 1mA (25 - 125 ºC)
S
VCE = 50V, IC = 50A, PW = 80µs
µA
VGE = 0V, VCE = 1200V, TJ = 150 ºC
8
IC = 50A, TJ = 125 ºC
8
IRM
Diode Reverse Leakage Current
20
µA
VR = 1200V, TJ = 25 ºC
IGES
Gate To Emitter Leakage Current
±200
nA
VGE = 20V
R1/2/3
Sensing Resistors
1.98
2
2.02
Rsh
DC bus minus series shunt resistor
1.98
2
2.02
The package chosen is mechanically compatible with the
well known EconoPack outline, Also the height of the
plastic cylindrical nuts for the external PCB positioned on
www.irf.com
V
IC = 50A
Diode Forward Voltage Drop
The EMP module contains six IGBTs and HexFreds
Diodes in a standard inverter configuration. IGBTs used
are the new NPT 1200V-50A (current rating measured at
100C°), generation V from International Rectifier; the
HexFred diodes have been designed specifically as pair
elements for these power transistors. Thanks to the new
design and technological realization, these devices do not
need any negative gate voltage for their complete turn off;
moreover the tail effect is also substantially reduced
compared to competitive devices of the same family. This
feature tremendously simplifies the gate driving stage.
Another innovative feature in this type of power modules is
the presence of sensing resistors in the three output
phases, for precise motor current sensing and short circuit
protections, as well as another resistor of the same value
in the DC bus minus line, needed only for device
protections purposes. A complete schematic of the EMP
module is shown on page 1 where all sensing resistors
have been clearly evidenced, a thermal sensor with
negative temperature coefficient is also embedded in the
device structure.
12
VGE = 0V, VCE = 1200V, TJ = 125 ºC
VFM
General Description
10, 11
VGE = 0V, VCE = 1200V
4000
1.78
Fig.
VGE = 0V, IC = 250µA
IC = 50A, VGE = 15V, TJ = 125 ºC
500
ICES
Test Conditions
mΩ
its top is the same as the EconoPack II, so that, with the
only re-layout of the main motherboard, this module can fit
into the same mechanical fixings of the standard
EconoPack II package thus speeding up the device
evaluation in an already existing driver. An important
feature of this new device is the presence of Kelvin
connections for all feedback and command signals
between the board and the module with the advantage of
having all emitter and resistor sensing independent from
the main power path. The final benefit is that all low power
signal from/to the controlling board are unaffected by
parasitic inductances or resistances inevitably present in
the module power layout. The new package outline is
shown on bottom of page 1. Notice that because of high
current spikes on those inputs the DC bus power pins are
doubled in size compared to the other power pins. Module
technology uses the standard and well know DBC (Direct
Bondable Copper): over a thick Copper base an allumina
(Al2O3) substrate with a 300µm copper foil on both side is
placed and IGBTs and Diodes dies are directly soldered,
through screen printing process. These dies are then
bonded with a 15 mils aluminum wire for power and signal
connections. All components are then completely covered
by a silicone gel for mechanical protection and electrical
isolation purposes.
3
EMP50P12B
I27148 08/06
Switching Characteristics:
For proper operation the device should be used within the recommended conditions.
TJ = 25°C (unless otherwise specified)
Symbol
Parameter Definition
Min
Typ
Max
Units
Test Conditions
IC = 50A
Fig.
Qg
Total Gate Charge (turn off)
400
411
Qge
Gate – Emitter Charge (turn off)
46
55
Qgc
Gate – Collector Charge (turn off)
181
200
VGE = 15V
Eon
Turn on Switching Loss
2814
3220
IC = 50A, VCC = 600V, TJ = 25 ºC
CT4
Eoff
Turn off Switching Loss
5293
5825
VGE = 15V, RG =10Ω, L = 250µH
WF1
Etot
Total Switching Loss
8107
9145
Tail and Diode Rev. Recovery included
WF2
Eon
Turn on Switching Loss
3963
4415
IC = 50A, VCC = 600V, TJ = 125 ºC
Eoff
Turn off Switching Loss
7810
8965
Etot
Total Switching Loss
11773
13380
13,
15
CT4
WF1
WF2
td (on)
Turn on delay time
66
72
Tr
Rise time
72
83
td (off)
Turn off delay time
593
641
Tf
Fall time
95
117
Cies
Input Capacitance
5884
6052
Coes
Output Capacitance
950
968
Cres
Reverse Transfer Capacitance
167
193
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
10
EREC
Diode reverse recovery energy
693
1114
1535
trr
Diode reverse recovery time
156
260
Irr
Peak reverse recovery current
35
42
RthJC_T
nC
µJ
µJ
VCC = 600V
VGE = 15V, RG =10Ω, L = 250µH
Tail and Diode Rev. Recovery included
IC = 50A, VCC = 600V, TJ = 125 ºC
ns
VGE = 15V, RG =10Ω, L = 250µH
23
CT1
14,16
CT4
WF1
WF2
VCC = 30V
pF
VGE = 0V
22
f = 1MHz
TJ = 150 ºC, I C =200A, VGE = 15V to 0V
VCC = 1000V, Vp = 1200V, RG = 5Ω
4
CT2
TJ = 150 ºC, VGE = 15V to 0V
CT3
VCC = 900V, Vp= 1200V, RG = 5Ω
WF4
µJ
TJ = 125 ºC
363
ns
IF = 50A, VCC = 600V,
43
A
VGE = 15V, RG =10Ω, L = 250µH
17,18
19,20
21
CT4
WF3
Each IGBT to copper plate thermal resistance
0.35
ºC/W
RthJC_D
Each Diode to copper plate thermal resistance
0.70
ºC/W
See also fig.24 and 25
24,25
RthC-H
Module copper plate to heat sink thermal
resistance. Silicon grease applied = 0.1mm
0.03
ºC/W
100
IC = 7A, VDC = 530V, fsw = 8kHz, TC = 55 ºC
PD1
150
IC = 10A, VDC = 530V, fsw = 8kHz, TC = 55 ºC
Pdiss
Total Dissipated Power
FULL SQUARE
µs
250
200
www.irf.com
W
IC = 10A, VDC = 530V, fsw = 16kHz TC = 55 ºC,
IC = 20A, VDC = 530V, fsw = 4kHz, TC = 40ºC
PD2
PD3
4
EMP50P12B
I27148 08/06
Fig. 1 – Maximum DC collector
Current vs. case temperature
TC = (ºC)
Fig. 3 – Forward SOA
TC = 25ºC; Tj ≤ 150ºC
VCE = (V)
www.irf.com
Fig. 2 – Power Dissipation vs.
Case Temperature
TC = (ºC)
Fig. 4 – Reverse Bias SOA
Tj = 150ºC, VGE = 15V
VCE = (V)
5
EMP50P12B
I27148 08/06
Fig. 5 – Typical IGBT Output Characteristics
Tj = - 40ºC; tp = 500µs
VCE = (V)
Fig. 7 – Typical IGBT Output Characteristics
Tj = 125ºC; tp = 500µs
VCE = (V)
www.irf.com
Fig. 6 – Typical IGBT Output haracteristics
Tj = 25ºC; tp = 500µs
VCE = (V)
Fig. 8 – Typical Diode Forward Characteristics
tp = 500µs
VF = (V)
6
EMP50P12B
I27148 08/06
Fig. 9 – Typical VCE vs. VGE
Tj = - 40ºC
VGE = (V)
Fig. 11 – Typical VCE vs. VGE
Tj = 125ºC
VGE = (V)
www.irf.com
Fig. 10 – Typical VCE vs. VGE
Tj = 25ºC
VGE = (V)
Fig. 12 – Typical Transfer Characteristics
VCE = 20V; tp = 20µs
VGE = (V)
7
EMP50P12B
I27148 08/06
Fig. 13 – Typical Energy Loss vs. IC
Tj = 125ºC; L = 250µH; VCE = 600V;
Rg = 10Ω; VGE = 15V
IC = (A)
Fig. 15 – Typical Energy Loss vs. Rg
Tj = 125ºC; L = 250µH; VCE = 600V;
ICE = 50A; VGE = 15V
Rg = (Ω)
www.irf.com
Fig. 14 – Typical Switching Time vs. IC
Tj = 125ºC; L = 250µH; VCE = 600V;
Rg = 10Ω; VGE = 15V
IC = (A)
Fig. 16 – Typical Switching Time vs. Rg
Tj = 125ºC; L = 250µH; VCE = 600V;
ICE = 50A; VGE = 15V
Rg = (Ω)
8
EMP50P12B
I27148 08/06
Fig. 17 – Typical Diode IRR vs. IF
Tj = 125ºC
IF = (A)
Fig. 19 – Typical Diode IRR vs. dIF/dt
VDC = 600V; VGE = 15V; IF = 50A; Tj =
125ºC
dIF/dt (A/µs)
www.irf.com
Fig. 18 – Typical Diode IRR vs. Rg
IF = 50A; Tj = 125ºC
Rg = (Ω)
Fig. 20 – Typical Diode QRR
VDC = 600V; VGE = 15V; Tj = 125ºC
dIF/dt (A/µs)
9
EMP50P12B
I27148 08/06
Fig. 21 – Typical Diode EREC vs. IF
Tj = 125ºC
IF = (A)
Fig. 23 – Typical Gate Charge vs. VGE
IC = 50A; L = 600µH; VCC = 600V
QG = (nC)
www.irf.com
Fig. 22 – Typical Capacitance vs. VCE
VGE = 0V; f = 1MHz
Vce = (V)
Fig. TF1 – Thermal Sensor Resistance
vs. Base-Plate Temperature
TC (ºC)
10
EMP50P12B
I27148 08/06
Fig. 24 – Normalized Transient Thermal Impedance, Junction-to-copper plate (IGBTs)
t1, Rectangular Pulse Duration (sec)
Fig. 25 – Normalized Transient Impedance, Junction-to-copper plate (FRED diodes)
t1, Rectangular Pulse Duration (sec)
www.irf.com
11
EMP50P12B
www.irf.com
I27148 08/06
12
EMP50P12B
www.irf.com
I27148 08/06
13
EMP50P12B
I27148 08/06
EMP family part number identification
EMP 50 P 12 B
1
2
3
4
5
1- Package type
2- Current rating
3- Current sensing configuration
P=
Q=
E=
F=
G=
on 3 phases
on 2 phases
on 3 emitters
on 2 emitters
on 1 emitter
A=
B=
C=
D=
M=
Bridge brake
Inverter
Inverter + brake
BBI (Bridge Brake Inverter)
Matrix
4- Voltage code: Code x 100 = Vrrm
5- Circuit configuration code
www.irf.com
14
EMP50P12B
I27148 08/06
EMP50P12B case outline and dimensions
Data and specifications subject to change without notice
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR’s Web Site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 3252 7105
TAC Fax: (310) 252 7309
Visit us at www.irf.com for sales contact information 01/03
Data and specifications subject to change without notice.
Sales Offices, Agents and Distributors in Major Cities Throughout the World.
© 2003 International Rectifier - Printed in Italy 08-06 - Rev. 1.9
www.irf.com
15