FSPS130R, FSPS130F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power FETs combine this electrical capability with total dose radiation hardness up to 300 krads while maintaining the guaranteed performance for Single Event Effects (SEE) which the Fairchild FS families have always featured. The Fairchild portfolio of Star*Power FETs includes a family of devices in various voltage, current and package styles. The Star*Power family consists of Star*Power and Star*Power Gold products. Star*Power FETs are optimized for total dose and rDS(ON) performance while exhibiting SEE capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for SEE and Gate Charge providing SEE performance to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specifically designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, power distribution, motor drives and relay drivers as well as other power control and conditioning applications. As with conventional MOSFETs these Radiation Hardened MOSFETs offer ease of voltage control, fast switching speeds and ability to parallel switching devices. Reliability screening is available as either TXV or Space equivalent of MIL-PRF-19500. Formerly available as type TA45212W. December 2001 Features • 16A (Current Limited by Package), 100V, rDS(ON) = 0.049Ω • UIS Rated • Total Dose - Meets Pre-rad Specifications to 100 krad (Si) - Rated to 300 krad (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 5V Off-Bias • Dose Rate - Typically Survives 3E9 rad (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to I AS • Photo Current - 1.5nA Per-rad (Si)/s Typically • Neutron - Maintain Pre-rad Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 Symbol D G S Packaging TO-257AA S D G Ordering Information RAD LEVEL 10K SCREENING LEVEL PART NUMBER/BRAND Engineering Samples FSPS130D1 100K TXV FSPS130R3 100K Space FSPS130R4 300K TXV FSPS130F3 300K Space FSPS130F4 ©2001 Fairchild Semiconductor Corporation CAUTION: Beryllia Warning per MIL-PRF-19500 refer to package specifications. FSPS130R, FSPS130F Rev. B FSPS130R, FSPS130F Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified FSPS130R, FSPS130F UNITS Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 100 V Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 100 V Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 16 (Note) A TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 16 A Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 64 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±30 V TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT 57 W TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT 23 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45 W/ oC Single Pulsed Avalanche Current, L = 100µH (See Test Figure) . . . . . . . . . . . . . . . . . . . . IAS 54 A Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS 16 A Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 64 A Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) 300 oC 4.4 (Typical) g Maximum Power Dissipation Weight (Typical) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: Current is limited by the package capability. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On-State Voltage Drain to Source On Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge IDSS IGSS VDS(ON) rDS(ON)12 td(ON) tr td(OFF) VDS = 80V, VGS = 0V VGS = ±30V Gate Charge Source Qgs Gate Charge Drain Qgd MAX UNITS 100 - - V - - 5.5 V TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC 2.0 - 4.5 V 1.0 - - V - - 25 µA - - 250 µA - - 100 nA - - 200 nA - - 0.784 V - 0.044 0.049 Ω TC = 25oC TC = 125oC - - 0.086 Ω VDD = 50V, ID = 16A, RL = 3.1Ω, VGS = 12V, RGS = 7.5Ω - - 20 ns - - 40 ns - - 35 ns - - 15 ns VGS = 0V to 12V - 35 40 nC - 10 13 nC - 9 12 nC tf Qg(12) TYP TC = -55oC VGS = 12V, ID = 16A ID = 16A, VGS = 12V MIN VDD = 50V, ID = 16A Gate Charge at 20V Qg(20) VGS = 0V to 20V - 56 - nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V - 3 - nC ID = 16A, VDS = 15V - 6 - V VDS = 25V, VGS = 0V, f = 1MHz - 1570 - pF - 380 - pF - 20 - pF 2.2 oC/W Plateau Voltage V(PLATEAU) Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Thermal Resistance Junction to Case ©2001 Fairchild Semiconductor Corporation RθJC - - FSPS130R, FSPS130F Rev. B FSPS130R, FSPS130F Source to Drain Diode Specifications PARAMETER SYMBOL Forward Voltage TEST CONDITIONS VSD Reverse Recovery Time trr Reverse Recovery Charge MIN TYP MAX ISD = 16A - - 1.2 V ISD = 16A, dISD/dt = 100A/µs - - 180 ns - 0.80 - µC QRR Electrical Specifications up to 300 krad TC = 25oC, Unless Otherwise Specified MIN PARAMETER UNITS SYMBOL TEST CONDITIONS MAX MIN 100 krad MAX 300 krad UNITS Drain to Source Breakdown Volts (Note 3) BVDSS VGS = 0, ID = 1mA 100 - 100 - V Gate to Source Threshold Volts (Note 3) VGS(TH) VGS = VDS, ID = 1mA 2.0 4.5 1.5 4.5 V Gate to Body Leakage (Notes 2, 3) IGSS VGS = ±20V, VDS = 0V - 100 100 nA Zero Gate Leakage (Note 3) IDSS VGS = 0, VDS = 80V - 25 50 µA Drain to Source On-State Volts (Notes 1, 3) VDS(ON) VGS = 12V, ID = 16A - 0.784 0.864 V Drain to Source On Resistance (Notes 1, 3) rDS(ON)12 VGS = 12V, ID = 16A - 0.049 0.054 Ω NOTES: 1. Pulse test, 300µs Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both V GS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Single Event Effects (SEB, SEGR) Note 4 ENVIRONMENT (NOTE 5) TEST Single Event Effects Safe Operating Area TYPICAL RANGE (µ) APPLIED VGS BIAS (V) (NOTE 7) MAXIMUM VDS BIAS (V) 36 -5 100 60 32 -2 80 82 28 0 60 82 28 -2 30 SYMBOL (NOTE 6) TYPICAL LET (MeV/mg/cm) SEESOA 37 NOTES: 4. Testing conducted at Brookhaven National Labs or Texas A&M. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au. 7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). Performance Curves Unless Otherwise Specified LET = 37MeV/mg/cm2, RANGE = 36µ LET = 60MeV/mg/cm2, RANGE = 32µ LET = 82MeV/mg/cm2, RANGE = 28µ 120 120 LET = 37 FLUENCE = 1E5 IONS/cm2 (TYPICAL) 100 100 80 VDS (V) VDS (V) 80 60 60 40 40 LET = 82 20 20 LET = 60 TEMP = 25oC 0 0 -1 -2 -3 -4 VGS (V) -5 -6 0 -7 FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA ©2001 Fairchild Semiconductor Corporation 0 4 8 12 16 20 24 NEGATIVE VGS BIAS (V) FIGURE 2. TYPICAL SEE SIGNATURE CURVE FSPS130R, FSPS130F Rev. B FSPS130R, FSPS130F Performance Curves Unless Otherwise Specified (Continued) 1E-3 LIMITING INDUCTANCE (HENRY) 20 1E-4 16 ID , DRAIN (A) ILM = 10A 30A 1E-5 100A 300A 12 8 1E-6 4 0 -50 1E-7 30 10 100 300 1000 0 DRAIN SUPPLY (V) FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO I AS 200 100 150 FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE TC = 25oC 100 ID , DRAIN CURRENT (A) 50 TC , CASE TEMPERATURE (oC) 12V QG 100µs 10 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 QGS 10ms QGD VG 0.10 1 10 100 300 VDS , DRAIN TO SOURCE VOLTAGE (V) CHARGE FIGURE 5. FORWARD BIAS SAFE OPERATING ARE A FIGURE 6. BASIC GATE CHARGE WAVEFORM 2.5 100 ID, DRAIN TO SOURCE CURRENT (A) PULSE DURATION = 250ms, VGS = 12V, ID = 16A NORMALIZED rDS(ON) 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 7. TYPICAL NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE ©2001 Fairchild Semiconductor Corporation VGS VGS VGS VGS VGS 80 60 = 14V = 12V = 10V = 8V = 6V 40 VGS = 6V 20 0 0 1 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS FSPS130R, FSPS130F Rev. B FSPS130R, FSPS130F NORMALIZED THERMAL RESPONSE (ZqJC) Performance Curves Unless Otherwise Specified (Continued) 101 100 0.5 10-1 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE PDM 10-2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 10-3 10-5 10-4 10-3 10-2 10-1 t1 t2 100 101 t, RECTANGULAR PULSE DURATION (s) FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE IAS , AVALANCHE CURRENT (A) 100 STARTING TJ = 25oC STARTING TJ = 150oC 10 IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) IF R ≠ 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 1 0.01 0.1 1 10 tAV , TIME IN AVALANCHE (ms) FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L BVDSS + CURRENT I TRANSFORMER AS tP - VARY tP TO OBTAIN REQUIRED PEAK IAS VDD DUT tP VDD + 50Ω VGS ≤ 20V 0V VDS IAS 50V-150V 50Ω tAV FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation FIGURE 12. UNCLAMPED ENERGY WAVEFORMS FSPS130R, FSPS130F Rev. B FSPS130R, FSPS130F Test Circuits and Waveforms (Continued) tON VDD tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% VDS VGS = 12V 10% DUT 10% 0V 90% RGS 50% VGS 50% PULSE WIDTH 10% FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 14. RESISTIVE SWITCHING WAVEFORMS Screening Information Screening is performed in accordance with the latest revision in effect of MIL-PRF-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Gate to Source Leakage Current IGSS VGS = ±30V ±20 (Note 7) nA Zero Gate Voltage Drain Current IDSS VDS = 80% Rated Value ±25 (Note 7) µA Drain to Source On Resistance rDS(ON) TC = 25oC at Rated ID ±20% (Note 8) Ω Gate Threshold Voltage VGS(TH) ID = 1.0mA ±20% (Note 8) V NOTES: 8. Or 100% of Initial Reading (whichever is greater). 9. Of Initial Reading. Screening Information TEST JANTXV EQUIVALENT JANS EQUIVALENT Unclamped Inductive Switching VGS(PEAK) = 20V, L = 0.1mH; Limit = 54A VGS(PEAK) = 20V, L = 0.1mH; Limit = 54A Thermal Response tH = 100ms; VH = 25V; IH = 1A; LIMIT = 85mV tH = 100ms; VH = 25V; IH = 1A; LIMIT = 85mV Gate Stress VGS = 45V, t = 250µs VGS = 45V, t = 250µs Pind Optional Required Pre Burn-In Tests (Note 9) MIL-PRF-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-PRF-19500 Group A, Subgroup 2 (All Static Tests at 25oC) Steady State Gate Bias (Gate Stress) MIL-PRF-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours MIL-PRF-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests and Limits Table All Delta Parameters Listed in the Delta Tests and Limits Table Steady State Reverse Bias (Drain Stress) MIL-PRF-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours MIL-PRF-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours PDA 10% 5% Final Electrical Tests (Note 9) MIL-PRF-19500, Group A, Subgroup 2 MIL-PRF-19500, Group A, Subgroups 2 and 3 NOTE: 10. Test limits are identical pre and post burn-in. Additional Tests PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Safe Operating Area SOA VDS = 80V, t = 10ms 1.8 A Thermal Impedance ∆VSD tH = 500ms; VH = 25V; IH = 1A 125 mV ©2001 Fairchild Semiconductor Corporation FSPS130R, FSPS130F Rev. B FSPS130R, FSPS130F Rad Hard Data Packages - Fairchild Power Transistors TXV Equivalent Class S - Equivalents 1. RAD HARD TXV EQUIVALENT - STANDARD DATA PACKAGE 1. RAD HARD “S” EQUIVALENT - STANDARD DATA PACKAGE A. Certificate of Compliance A. Certificate of Compliance B. Assembly Flow Chart B. Serialization Records C. Preconditioning - Attributes Data Sheet C. Assembly Flow Chart D. Group A - Attributes Data Sheet D. SEM Photos and Report E. Group B - Attributes Data Sheet F. Group C - Attributes Data Sheet G. Group D - Attributes Data Sheet E. Preconditioning - Attributes Data Sheet - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data 2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA PACKAGE A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Pre and Post Burn-In Read and Record Data D. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C - Attributes Data Sheet - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) G. Group D - Attributes Data Sheet - Pre and Post RAD Read and Record Data F. Group A G. Group B - Attributes Data Sheet H. Group C - Attributes Data Sheet I. Group D - Attributes Data Sheet 2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL DATA PACKAGE A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Subgroups C1, C2, C3 and C6 Data I. Group D ©2001 Fairchild Semiconductor Corporation - Attributes Data Sheet - Attributes Data Sheet - Pre and Post Radiation Data FSPS130R, FSPS130F Rev. B