STB3NA60-1 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STB3NA60-1 ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 600 V <4Ω 2.9 A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ■ 3 12 I2PAK TO-262 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS Value Unit Drain-source Voltage (V GS = 0) Parameter 600 V Drain- gate Voltage (R GS = 20 kΩ) 600 V ± 30 V Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C 2.9 A ID Drain Current (continuous) at T c = 100 o C 1.8 A 11.6 A I DM (•) P tot Drain Current (pulsed) o Total Dissipation at T c = 25 C Derating Factor T stg Tj Storage Temperature Max. Operating Junction Temperature 80 W 0.64 W/ o C -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area March 1996 1/9 STB3NA60-1 THERMAL DATA R thj-case R thj-amb R thj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose o 1.56 62.5 0.5 300 Max Max Typ C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) 2.9 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR , V DD = 50 V) 42 mJ EAR Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 1.6 mJ I AR Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 1.8 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA V GS = 0 I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 I GSS Gate-body Leakage Current (V DS = 0) Min. Typ. Max. 600 Unit V 250 1000 µA µA ±100 nA Typ. Max. Unit 3 3.75 V 3.3 4 8 Ω T c = 125 o C V GS = ± 30 V ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = VGS R DS(on) Static Drain-source On Resistance ID(on) ID = 250 µA V GS = 10 V V GS = 10 V Min. 2.25 I D = 1.5 A I D = 1.5 A T C = 100 o C On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V 2.9 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/9 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max I D = 1.5 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V V GS = 0 f = 1 MHz Min. Typ. 1 2 380 57 17 Max. Unit S 500 75 23 pF pF pF STB3NA60-1 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Typ. Max. Unit Turn-on Time Rise Time Parameter V DD = 300 V I D = 1.5 A R G = 18 Ω V GS = 10 V (see test circuit, figure 3) Test Conditions Min. 14 25 20 35 ns ns Turn-on Current Slope V DD = 400 V ID = 3 A R G = 18 Ω V GS = 10 V (see test circuit, figure 5) 300 Total Gate Charge Gate-Source Charge Gate-Drain Charge ID = 3 A V DD = Max Rating x 0.8 V GS = 10 V A/µs 22 6 9 30 nC nC nC Typ. Max. Unit 13 24 12 18 34 17 ns ns ns Typ. Max. Unit 2.9 11.6 A A 1.5 V SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 480 V ID = 3 A R G = 18 Ω V GS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 2.9 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 3 A di/dt = 100 A/µs V DD = 100 V T j = 150 o C (see test circuit, figure 5) t rr Q rr I RRM V GS = 0 460 ns 5.6 µC 24 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/9 STB3NA60-1 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/9 STB3NA60-1 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/9 STB3NA60-1 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuit 6/9 Fig. 2: Unclamped Inductive Waveform STB3NA60-1 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times 7/9 STB3NA60-1 TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. 4.3 4.6 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B1 1.2 1.38 0.047 0.054 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 9 9.35 0.354 0.368 e 2.44 2.64 0.096 0.104 E 10 10.28 0.393 0.404 L 13.2 13.5 0.519 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.37 0.050 0.054 E e B B2 C2 A1 A C A L1 L2 8/9 MAX. D L STB3NA60-1 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 9/9