STP15N05L STP15N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP15N05L STP15N05LFI ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS( on) ID 50 V 50 V < 0.15 Ω < 0.15 Ω 15 A 10 A TYPICAL RDS(on) = 0.115 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE LOGIC LEVEL COMPATIBLE INPUT 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 3 2 TO-220 APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) 2 1 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP15N05L VD S V DG R V GS Unit STP15N05LFI Drain-source Voltage (V GS = 0) 50 V Drain- gate Voltage (R GS = 20 kΩ) 50 V ± 15 V Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C 15 10 A ID Drain Current (continuous) at T c = 100 oC 10 7 A Drain Current (pulsed) 60 60 A 70 35 W 0.47 0.23 W/o C 2000 ID M(•) P tot o Total Dissipation at Tc = 25 C Derating Factor V ISO T stg Tj Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature V -65 to 175 o C 175 o C (•) Pulse width limited by safe operating area November 1996 1/10 STP15N05L/FI THERMAL DATA R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max TO-220 ISOWATT220 2.14 4.29 Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o C/W 62.5 0.5 300 o C/W C/W o C Max Value Unit o AVALANCHE CHARACTERISTICS Symbol Parameter IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) 15 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) 45 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 10 mJ IA R Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 10 A o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA VG S = 0 I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Min. Typ. Max. 50 Unit V T c = 125 oC V GS = ± 15 V 1 10 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions V G S(th) Gate Threshold Voltage V DS = V GS ID = 250 µA R DS( on) Static Drain-source On Resistance V GS = 5 V I D = 7.5 A I D( on) On State Drain Current V DS > ID( on) x RD S(on) max V GS = 10 V Min. Typ. Max. Unit 1 1.6 2.5 V 0.115 0.15 Ω 15 A DYNAMIC Symbol gfs (∗) C iss C oss C rss 2/10 Parameter Test Conditions Forward Transconductance V DS > ID( on) x RD S(on) max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 7.5 A VG S = 0 Min. Typ. 5 9 350 150 50 Max. Unit S 500 200 80 pF pF pF STP15N05L/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Parameter Test Conditions Min. Typ. Max. Unit 90 270 ns ns Turn-on Time Rise Time V DD = 25 V ID = 7.5 A VGS = 5 V R G = 50 Ω (see test circuit, figure 3) 60 190 Turn-on Current Slope V DD = 40 V ID = 15 A VGS = 5 V R G = 50 Ω (see test circuit, figure 5) 120 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 40 V ID = 15 A V GS = 5 V A/µs 12 7 4 18 nC nC nC Typ. Max. Unit 40 60 110 60 90 160 ns ns ns Typ. Max. Unit 15 60 A A 1.5 V SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 40 V ID = 15 A R G = 50 Ω VGS = 5 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(•) Source-drain Current Source-drain Current (pulsed) V S D (∗) Forward On Voltage I SD = 15 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 15 A di/dt = 100 A/µs V DD = 25 V T j = 150 o C (see test circuit, figure 5) t rr Q rr I RRM Min. VG S = 0 80 ns 0.18 µC 4.5 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220 3/10 STP15N05L/FI Thermal Impedance For TO-220 Thermal Impedance For ISOWATT220 Derating Curve For TO-220 Derating Curve For ISOWATT220 Output Characteristics Transfer Characteristics 4/10 STP15N05L/FI Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 5/10 STP15N05L/FI Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics 6/10 STP15N05L/FI Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time 7/10 STP15N05L/FI TO-220 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.40 TYP. 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 TYP. 1.27 MAX. 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 3.5 3.93 0.137 0.154 3.75 3.85 0.147 0.151 D1 C D A E L9 DIA. H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 8/10 STP15N05L/FI ISOWATT220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 Ø 1 2 3 L2 L4 P011G 9/10 STP15N05L/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 10/10